FR2758418B1 - Dispositif de memoire a lecture seule a semi-conducteur et son procede de fabrication - Google Patents
Dispositif de memoire a lecture seule a semi-conducteur et son procede de fabricationInfo
- Publication number
- FR2758418B1 FR2758418B1 FR9706377A FR9706377A FR2758418B1 FR 2758418 B1 FR2758418 B1 FR 2758418B1 FR 9706377 A FR9706377 A FR 9706377A FR 9706377 A FR9706377 A FR 9706377A FR 2758418 B1 FR2758418 B1 FR 2758418B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- memory device
- semiconductor read
- semiconductor
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/383—Channel doping programmed
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW86100449A TW313698B (en) | 1997-01-16 | 1997-01-16 | Read only memory structure and manufacturing method thereof |
GB9709803A GB2325338B (en) | 1997-01-16 | 1997-05-14 | Semiconductor read-only memory device and method of fabricating the same |
NL1006214A NL1006214C2 (nl) | 1997-01-16 | 1997-06-03 | Halfgeleider-alleen-uitlees-geheugeninrichting en werkwijze voor het fabriceren hiervan. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2758418A1 FR2758418A1 (fr) | 1998-07-17 |
FR2758418B1 true FR2758418B1 (fr) | 2002-01-25 |
Family
ID=27268839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9706377A Expired - Fee Related FR2758418B1 (fr) | 1997-01-16 | 1997-05-26 | Dispositif de memoire a lecture seule a semi-conducteur et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US5933735A (fr) |
JP (1) | JP3265419B2 (fr) |
DE (1) | DE19725857C2 (fr) |
FR (1) | FR2758418B1 (fr) |
GB (1) | GB2325338B (fr) |
NL (1) | NL1006214C2 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110833A (en) * | 1998-03-03 | 2000-08-29 | Advanced Micro Devices, Inc. | Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation |
DE69802509T2 (de) * | 1998-06-30 | 2002-07-18 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeicheranordnung mit Grabenisolation |
TW503397B (en) * | 2001-03-29 | 2002-09-21 | Macronix Int Co Ltd | Layout of non-leakage structure of the selected block for read only memory (ROM) |
TW200302511A (en) * | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6777762B2 (en) * | 2002-11-05 | 2004-08-17 | Macronix International Co., Ltd. | Mask ROM structure having a coding layer between gates and word lines |
US11088140B2 (en) * | 2019-08-27 | 2021-08-10 | Nanya Technology Corporation | Multiple semiconductor elements with different threshold voltages |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597060A (en) * | 1985-05-01 | 1986-06-24 | Texas Instruments Incorporated | EPROM array and method for fabricating |
JPS6442168A (en) * | 1987-08-07 | 1989-02-14 | Sharp Kk | Semiconductor device |
JP2623122B2 (ja) * | 1988-08-05 | 1997-06-25 | 株式会社リコー | 三次元構造の半導体メモリ装置 |
FR2635410B1 (fr) * | 1988-08-11 | 1991-08-02 | Sgs Thomson Microelectronics | Memoire de type eprom a haute densite d'integration avec une organisation en damier et un facteur de couplage ameliore et procede de fabrication |
JPH04294582A (ja) * | 1991-03-25 | 1992-10-19 | Nippon Steel Corp | 半導体装置の製造方法 |
US5378647A (en) * | 1993-10-25 | 1995-01-03 | United Microelectronics Corporation | Method of making a bottom gate mask ROM device |
US5330924A (en) * | 1993-11-19 | 1994-07-19 | United Microelectronics Corporation | Method of making 0.6 micrometer word line pitch ROM cell by 0.6 micrometer technology |
US5358887A (en) * | 1993-11-26 | 1994-10-25 | United Microelectronics Corporation | Ulsi mask ROM structure and method of manufacture |
US5446299A (en) * | 1994-04-29 | 1995-08-29 | International Business Machines Corporation | Semiconductor random access memory cell on silicon-on-insulator with dual control gates |
US5429988A (en) * | 1994-06-13 | 1995-07-04 | United Microelectronics Corporation | Process for producing high density conductive lines |
US5523251A (en) * | 1994-10-05 | 1996-06-04 | United Microelectronics Corp. | Method for fabricating a self aligned mask ROM |
US5460987A (en) * | 1994-12-27 | 1995-10-24 | United Microelectronics Corporation | Method of making field effect transistor structure of a diving channel device |
EP1209747A3 (fr) * | 1995-02-17 | 2002-07-24 | Hitachi, Ltd. | Dispositif de mémoire semiconducteur |
-
1997
- 1997-04-15 US US08/839,629 patent/US5933735A/en not_active Expired - Fee Related
- 1997-05-14 GB GB9709803A patent/GB2325338B/en not_active Expired - Fee Related
- 1997-05-26 FR FR9706377A patent/FR2758418B1/fr not_active Expired - Fee Related
- 1997-06-03 NL NL1006214A patent/NL1006214C2/nl not_active IP Right Cessation
- 1997-06-18 DE DE19725857A patent/DE19725857C2/de not_active Expired - Fee Related
- 1997-07-02 JP JP17682597A patent/JP3265419B2/ja not_active Expired - Fee Related
-
1999
- 1999-03-25 US US09/275,804 patent/US5990527A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5933735A (en) | 1999-08-03 |
DE19725857C2 (de) | 2000-07-06 |
DE19725857A1 (de) | 1998-07-23 |
GB2325338A (en) | 1998-11-18 |
FR2758418A1 (fr) | 1998-07-17 |
GB9709803D0 (en) | 1997-07-09 |
GB2325338B (en) | 1999-03-24 |
JPH10209303A (ja) | 1998-08-07 |
US5990527A (en) | 1999-11-23 |
NL1006214C2 (nl) | 1998-12-04 |
JP3265419B2 (ja) | 2002-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |