FR2728391B1 - - Google Patents

Info

Publication number
FR2728391B1
FR2728391B1 FR9415540A FR9415540A FR2728391B1 FR 2728391 B1 FR2728391 B1 FR 2728391B1 FR 9415540 A FR9415540 A FR 9415540A FR 9415540 A FR9415540 A FR 9415540A FR 2728391 B1 FR2728391 B1 FR 2728391B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9415540A
Other versions
FR2728391A1 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US08/357,021 priority Critical patent/US5444014A/en
Application filed filed Critical
Priority to DE4445344A priority patent/DE4445344C2/de
Priority to GB9425589A priority patent/GB2296374B/en
Priority to FR9415540A priority patent/FR2728391A1/fr
Publication of FR2728391A1 publication Critical patent/FR2728391A1/fr
Application granted granted Critical
Publication of FR2728391B1 publication Critical patent/FR2728391B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66265—Thin film bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
FR9415540A 1994-12-16 1994-12-19 Procede de fabrication d'un substrat soi et d'un transistor bipolaire l'utilisant Granted FR2728391A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US08/357,021 US5444014A (en) 1994-12-16 1994-12-16 Method for fabricating semiconductor device
DE4445344A DE4445344C2 (de) 1994-12-16 1994-12-19 Verfahren zur Herstellung einer Halbleitervorrichtung
GB9425589A GB2296374B (en) 1994-12-16 1994-12-19 Fabricating semiconductor devices
FR9415540A FR2728391A1 (fr) 1994-12-16 1994-12-19 Procede de fabrication d'un substrat soi et d'un transistor bipolaire l'utilisant

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/357,021 US5444014A (en) 1994-12-16 1994-12-16 Method for fabricating semiconductor device
DE4445344A DE4445344C2 (de) 1994-12-16 1994-12-19 Verfahren zur Herstellung einer Halbleitervorrichtung
GB9425589A GB2296374B (en) 1994-12-16 1994-12-19 Fabricating semiconductor devices
FR9415540A FR2728391A1 (fr) 1994-12-16 1994-12-19 Procede de fabrication d'un substrat soi et d'un transistor bipolaire l'utilisant

Publications (2)

Publication Number Publication Date
FR2728391A1 FR2728391A1 (fr) 1996-06-21
FR2728391B1 true FR2728391B1 (fr) 1997-02-07

Family

ID=39561846

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9415540A Granted FR2728391A1 (fr) 1994-12-16 1994-12-19 Procede de fabrication d'un substrat soi et d'un transistor bipolaire l'utilisant

Country Status (4)

Country Link
US (1) US5444014A (fr)
DE (1) DE4445344C2 (fr)
FR (1) FR2728391A1 (fr)
GB (1) GB2296374B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2917919B2 (ja) * 1996-06-20 1999-07-12 日本電気株式会社 半導体基板およびその製造方法、並びに半導体素子
JP3075204B2 (ja) * 1997-02-28 2000-08-14 日本電気株式会社 半導体装置の製造方法
FR2812451B1 (fr) * 2000-07-28 2003-01-10 St Microelectronics Sa Procede de fabrication d'un ensemble silicium sur isolant a ilots minces semi-conducteurs entoures d'un materiau isolant
US6552374B2 (en) * 2001-01-17 2003-04-22 Asb, Inc. Method of manufacturing bipolar device and structure thereof
DE10124038A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung vergrabener Bereiche
DE10124032B4 (de) * 2001-05-16 2011-02-17 Telefunken Semiconductors Gmbh & Co. Kg Verfahren zur Herstellung von Bauelementen auf einem SOI-Wafer
US7262087B2 (en) * 2004-12-14 2007-08-28 International Business Machines Corporation Dual stressed SOI substrates
US7635599B2 (en) * 2005-09-29 2009-12-22 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same
CN116403902B (zh) * 2023-06-08 2023-08-18 微龛(广州)半导体有限公司 一种垂直双极性结型晶体管及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3929528A (en) * 1973-01-12 1975-12-30 Motorola Inc Fabrication of monocriptalline silicon on insulating substrates utilizing selective etching and deposition techniques
US3909332A (en) * 1973-06-04 1975-09-30 Gen Electric Bonding process for dielectric isolation of single crystal semiconductor structures
JPS5779634A (en) * 1980-11-06 1982-05-18 Fujitsu Ltd Manufacture of semiconductor device
JPH0642510B2 (ja) * 1983-06-13 1994-06-01 エヌ・シー・アール・インターナショナル・インコーポレイテッド 半導体構造の形成方法
JPS60113435A (ja) * 1983-11-25 1985-06-19 Hitachi Ltd 半導体装置およびその製造方法
JPS6412543A (en) * 1987-07-07 1989-01-17 Toshiba Corp Manufacture of semiconductor device
US5057443A (en) * 1988-06-29 1991-10-15 Texas Instruments Incorporated Method for fabricating a trench bipolar transistor
JPH02214120A (ja) * 1989-02-15 1990-08-27 Fujitsu Ltd 半導体装置の製造方法
EP0418421B1 (fr) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Méthode de fabrication d'un transistor bipolaire ayant une capacité base-collecteur réduite
US5266517A (en) * 1991-12-17 1993-11-30 Texas Instruments Incorporated Method for forming a sealed interface on a semiconductor device
JPH05251292A (ja) * 1992-03-06 1993-09-28 Nec Corp 半導体装置の製造方法
US5234535A (en) * 1992-12-10 1993-08-10 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
US5318663A (en) * 1992-12-23 1994-06-07 International Business Machines Corporation Method for thinning SOI films having improved thickness uniformity

Also Published As

Publication number Publication date
GB2296374A (en) 1996-06-26
DE4445344A1 (de) 1996-06-27
GB2296374B (en) 1999-03-24
GB9425589D0 (en) 1995-02-15
DE4445344C2 (de) 1996-10-02
FR2728391A1 (fr) 1996-06-21
US5444014A (en) 1995-08-22

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Effective date: 20060831