FR2697367B1 - Circuit intégré à semi-conducteurs ou sont incorporés des photodétecteurs. - Google Patents

Circuit intégré à semi-conducteurs ou sont incorporés des photodétecteurs.

Info

Publication number
FR2697367B1
FR2697367B1 FR9312699A FR9312699A FR2697367B1 FR 2697367 B1 FR2697367 B1 FR 2697367B1 FR 9312699 A FR9312699 A FR 9312699A FR 9312699 A FR9312699 A FR 9312699A FR 2697367 B1 FR2697367 B1 FR 2697367B1
Authority
FR
France
Prior art keywords
photodetectors
incorporated
semiconductor circuit
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9312699A
Other languages
English (en)
Other versions
FR2697367A1 (fr
Inventor
Toshiaki Kusano
Seiji Takahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Araco Co Ltd
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Kyoei Sangyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Kyoei Sangyo Co Ltd filed Critical Mitsubishi Electric Corp
Publication of FR2697367A1 publication Critical patent/FR2697367A1/fr
Application granted granted Critical
Publication of FR2697367B1 publication Critical patent/FR2697367B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/08—Disposition or mounting of heads or light sources relatively to record carriers
    • G11B7/09—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B7/0943—Methods and circuits for performing mathematical operations on individual detector segment outputs
FR9312699A 1992-10-26 1993-10-25 Circuit intégré à semi-conducteurs ou sont incorporés des photodétecteurs. Expired - Fee Related FR2697367B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28764092A JP2728835B2 (ja) 1992-10-26 1992-10-26 光センサ内蔵半導体集積回路

Publications (2)

Publication Number Publication Date
FR2697367A1 FR2697367A1 (fr) 1994-04-29
FR2697367B1 true FR2697367B1 (fr) 1995-04-21

Family

ID=17719848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9312699A Expired - Fee Related FR2697367B1 (fr) 1992-10-26 1993-10-25 Circuit intégré à semi-conducteurs ou sont incorporés des photodétecteurs.

Country Status (3)

Country Link
US (1) US5425011A (fr)
JP (1) JP2728835B2 (fr)
FR (1) FR2697367B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203996B2 (ja) * 1994-11-01 2001-09-04 三菱電機株式会社 電流−電圧変換アンプのテスト回路
US6624405B1 (en) 1999-04-19 2003-09-23 Capella Microsystems, Inc. BIST for testing a current-voltage conversion amplifier
US20030011425A1 (en) * 2001-07-12 2003-01-16 Em Microelectronics - Us Inc. Injection current test circuit
JP2007026486A (ja) * 2005-07-12 2007-02-01 Toshiba Corp 受光素子回路及び光ディスク装置
JP4159582B2 (ja) * 2006-04-26 2008-10-01 松下電器産業株式会社 受光増幅回路のテスト回路およびテスト方法
JP2008090935A (ja) * 2006-10-02 2008-04-17 Mitsumi Electric Co Ltd 光検出器及びそれを用いた光ピックアップ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313368A (ja) * 1986-07-04 1988-01-20 Canon Inc 半導体センサ装置
JPS63153733A (ja) * 1986-12-18 1988-06-27 Sony Corp 光検出器および光検出器の出力選択方法
JPS63181372A (ja) * 1987-01-22 1988-07-26 Sharp Corp 光ピツクアツプ用受光素子
JP2695446B2 (ja) * 1988-08-31 1997-12-24 キヤノン株式会社 光学的情報記録再生装置
JPH04366740A (ja) * 1991-06-12 1992-12-18 Mitsubishi Electric Corp 半導体集積回路
TW213519B (fr) * 1991-08-01 1993-09-21 Philips Nv

Also Published As

Publication number Publication date
JPH06139609A (ja) 1994-05-20
JP2728835B2 (ja) 1998-03-18
US5425011A (en) 1995-06-13
FR2697367A1 (fr) 1994-04-29

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Legal Events

Date Code Title Description
ST Notification of lapse