FR2651375A1 - Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ. - Google Patents

Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ. Download PDF

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Publication number
FR2651375A1
FR2651375A1 FR9010898A FR9010898A FR2651375A1 FR 2651375 A1 FR2651375 A1 FR 2651375A1 FR 9010898 A FR9010898 A FR 9010898A FR 9010898 A FR9010898 A FR 9010898A FR 2651375 A1 FR2651375 A1 FR 2651375A1
Authority
FR
France
Prior art keywords
grid
interconnection
gate
finger
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9010898A
Other languages
English (en)
French (fr)
Other versions
FR2651375B1 (enExample
Inventor
Hosogi Kenji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2651375A1 publication Critical patent/FR2651375A1/fr
Application granted granted Critical
Publication of FR2651375B1 publication Critical patent/FR2651375B1/fr
Granted legal-status Critical Current

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Classifications

    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR9010898A 1989-08-31 1990-08-31 Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ. Granted FR2651375A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22642089 1989-08-31

Publications (2)

Publication Number Publication Date
FR2651375A1 true FR2651375A1 (fr) 1991-03-01
FR2651375B1 FR2651375B1 (enExample) 1997-03-07

Family

ID=16844844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9010898A Granted FR2651375A1 (fr) 1989-08-31 1990-08-31 Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ.

Country Status (3)

Country Link
US (1) US5019877A (enExample)
FR (1) FR2651375A1 (enExample)
GB (1) GB2236617B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220194A (en) * 1989-11-27 1993-06-15 Motorola, Inc. Tunable capacitor with RF-DC isolation
JPH0575139A (ja) * 1991-09-12 1993-03-26 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH05275463A (ja) * 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
US6084277A (en) * 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
JP2001015526A (ja) * 1999-06-28 2001-01-19 Nec Kansai Ltd 電界効果トランジスタ
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
EP1430537A1 (en) * 2001-09-04 2004-06-23 Koninklijke Philips Electronics N.V. Method for producing a semiconductor device having an edge structure
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
CN102013437B (zh) * 2009-09-07 2014-11-05 苏州捷芯威半导体有限公司 半导体器件及其制造方法
CN112825333B (zh) * 2019-11-21 2024-04-05 南通尚阳通集成电路有限公司 功率器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2526584A1 (fr) * 1982-05-04 1983-11-10 Thomson Csf Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres
JPS61234566A (ja) * 1985-04-11 1986-10-18 Fujitsu Ltd 電界効果トランジスタ
EP0203225A2 (en) * 1985-01-28 1986-12-03 TELETTRA Telefonia Elettronica e Radio S.p.A. MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process
EP0225566A2 (en) * 1985-12-03 1987-06-16 Itt Industries, Inc. Permeable gate transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937485A1 (de) * 1979-09-17 1981-06-19 Siemens AG, 1000 Berlin und 8000 München Optische vorrichtung zum messen geringer druckdifferenzen mittels lichtintensitaetsaenderung
EP0166112B1 (en) * 1984-04-28 1990-07-04 Sony Corporation Semiconductor device with bonding pads surrounded by source and/or drain regions
US4794093A (en) * 1987-05-01 1988-12-27 Raytheon Company Selective backside plating of gaas monolithic microwave integrated circuits
JPH0783053B2 (ja) * 1987-06-19 1995-09-06 三菱電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2526584A1 (fr) * 1982-05-04 1983-11-10 Thomson Csf Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres
EP0203225A2 (en) * 1985-01-28 1986-12-03 TELETTRA Telefonia Elettronica e Radio S.p.A. MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process
JPS61234566A (ja) * 1985-04-11 1986-10-18 Fujitsu Ltd 電界効果トランジスタ
EP0225566A2 (en) * 1985-12-03 1987-06-16 Itt Industries, Inc. Permeable gate transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
15TH EUROPEAN MICROWAVE CONFERENCE 9-13 SEPTEMBRE 1985 PALAIS DES CONGRES,PARIS,FRANCE CONVEX HOUSE,TUNBRIDGE WELLS,KENT pages 239 - 244; E. M. BASTIDA ET AL: "AIR BRIDGE FET DEVICES FOR HIGH-PERFORMANCE MICROWAVE CIRCUITS" *
PATENT ABSTRACTS OF JAPAN vol. 11, no. 81 (E-488)(2528) 12 mars 1987, & JP-A-61 234566 (FUJITSU LTD) 18 octobre 1986, *

Also Published As

Publication number Publication date
GB2236617B (en) 1993-04-28
GB9006049D0 (en) 1990-05-09
US5019877A (en) 1991-05-28
GB2236617A (en) 1991-04-10
FR2651375B1 (enExample) 1997-03-07

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