FR2647276B1 - - Google Patents
Info
- Publication number
- FR2647276B1 FR2647276B1 FR9006375A FR9006375A FR2647276B1 FR 2647276 B1 FR2647276 B1 FR 2647276B1 FR 9006375 A FR9006375 A FR 9006375A FR 9006375 A FR9006375 A FR 9006375A FR 2647276 B1 FR2647276 B1 FR 2647276B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1129346A JP2619057B2 (ja) | 1989-05-22 | 1989-05-22 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2647276A1 FR2647276A1 (fr) | 1990-11-23 |
| FR2647276B1 true FR2647276B1 (US07709020-20100504-C00041.png) | 1995-04-21 |
Family
ID=15007340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9006375A Granted FR2647276A1 (fr) | 1989-05-22 | 1990-05-22 | Laser a semiconducteurs |
Country Status (5)
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69018336T2 (de) * | 1989-08-18 | 1995-12-14 | Mitsubishi Electric Corp | Verfahren zur Herstellung eines Beugungsgitters. |
| US5247536A (en) * | 1990-07-25 | 1993-09-21 | Kabushiki Kaisha Toshiba | Semiconductor laser distributed feedback laser including mode interrupt means |
| JP3124305B2 (ja) * | 1991-03-20 | 2001-01-15 | 富士通株式会社 | 光信号波長選択方法および光波長フィルタ |
| JP2961964B2 (ja) * | 1991-07-10 | 1999-10-12 | 日本電気株式会社 | 半導体レーザ装置 |
| JP2982422B2 (ja) * | 1991-09-20 | 1999-11-22 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
| JP2705409B2 (ja) * | 1991-11-21 | 1998-01-28 | 三菱電機株式会社 | 半導体分布帰還形レーザ装置 |
| US5208824A (en) * | 1991-12-12 | 1993-05-04 | At&T Bell Laboratories | Article comprising a DFB semiconductor laser |
| EP0753914B1 (en) * | 1993-01-08 | 2000-09-06 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
| US5319666A (en) * | 1993-04-07 | 1994-06-07 | At&T Bell Laboratories | Article comprising a distributed feedback laser |
| DE4322164A1 (de) * | 1993-07-03 | 1995-01-12 | Ant Nachrichtentech | Optoelektronisches Bauelement mit Rückkopplungsgitter, mit axial quasi-kontinuierlich und nahezu beliebig variierbarem Gitterkopplungs-Koeffizienten, mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, sowie mit axial nahezu beliebig verteilbarer und variierbarer Phasenverschiebung |
| DE4322163A1 (de) * | 1993-07-03 | 1995-01-12 | Ant Nachrichtentech | Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten |
| FR2715251B1 (fr) * | 1994-01-20 | 1996-04-05 | Christophe Kazmierski | Structure semiconductrice à réseau de diffraction virtuel. |
| JPH07221392A (ja) * | 1994-02-08 | 1995-08-18 | Mitsubishi Electric Corp | 量子細線の作製方法、量子細線、量子細線レーザ、及び量子細線レーザの作製方法、回折格子の作製方法、及び分布帰還型半導体レーザ |
| US5504772A (en) * | 1994-09-09 | 1996-04-02 | Deacon Research | Laser with electrically-controlled grating reflector |
| DE19500135A1 (de) * | 1995-01-04 | 1996-07-11 | Deutsche Telekom Ag | Optoelektronisches Bauelement mit einem Rückkoppelungsgitter mit axial veränderbarer Korrugationsperiode |
| JPH08255947A (ja) * | 1995-03-17 | 1996-10-01 | Mitsubishi Electric Corp | 半導体レーザ装置，及びその製造方法 |
| JPH08255954A (ja) | 1995-03-17 | 1996-10-01 | Mitsubishi Electric Corp | 半導体レーザの構造及びその製造方法 |
| IN188435B (US07709020-20100504-C00041.png) * | 1995-05-18 | 2002-09-21 | Siemens Ag | |
| EP0782226A1 (en) * | 1995-12-28 | 1997-07-02 | Lucent Technologies Inc. | Method of making distributed feedback laser having spatial variation of grating coupling along laser cavity length |
| JP3714430B2 (ja) * | 1996-04-15 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
| US6072812A (en) * | 1997-08-01 | 2000-06-06 | Lucent Technologies Inc. | Distributed feedback laser with loss coupling |
| DE10132231C2 (de) | 2001-06-29 | 2003-08-14 | Infineon Technologies Ag | Verfahren zur in-situ Herstellung von DFB-Lasern |
| JP5143985B2 (ja) * | 2001-08-10 | 2013-02-13 | 古河電気工業株式会社 | 分布帰還型半導体レーザ素子 |
| JP2003133638A (ja) * | 2001-08-14 | 2003-05-09 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子及びレーザモジュール |
| US7065123B2 (en) * | 2002-06-27 | 2006-06-20 | Anritsu Corporation | Distributed feedback semiconductor laser for outputting beam of single wavelength |
| JP2004111709A (ja) * | 2002-09-19 | 2004-04-08 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2005229011A (ja) * | 2004-02-16 | 2005-08-25 | Anritsu Corp | 波長可変半導体レーザ及びガス検知装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1513573A (en) * | 1974-08-22 | 1978-06-07 | Xerox Corp | Electrically pumpable feedback solid-state diode laser |
| US4534033A (en) * | 1981-08-25 | 1985-08-06 | Handotal Kenkyu Shinkokai | Three terminal semiconductor laser |
| JPS58158989A (ja) * | 1982-03-16 | 1983-09-21 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還半導体レ−ザ |
| JPS59188187A (ja) * | 1983-04-08 | 1984-10-25 | Nec Corp | 半導体レ−ザダイオ−ド及びその製造方法 |
| JPS6065588A (ja) * | 1983-09-21 | 1985-04-15 | Agency Of Ind Science & Technol | 半導体レ−ザの製造方法 |
| JPS60247986A (ja) * | 1984-05-23 | 1985-12-07 | Fujitsu Ltd | 分布帰還型半導体レ−ザ |
| JPS61134096A (ja) * | 1984-12-05 | 1986-06-21 | Matsushita Electric Ind Co Ltd | 分布帰還型半導体レ−ザ |
| US4716570A (en) * | 1985-01-10 | 1987-12-29 | Sharp Kabushiki Kaisha | Distributed feedback semiconductor laser device |
| US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
| JPS62163385A (ja) * | 1986-01-14 | 1987-07-20 | Sony Corp | 分布帰還型半導体レ−ザの製造方法 |
| DE3619258A1 (de) * | 1986-06-07 | 1987-12-10 | Blaupunkt Werke Gmbh | Compact disc (cd)-spieler |
| US4740987A (en) * | 1986-06-30 | 1988-04-26 | American Telephone And Telegraph Company, At&T Bell Laboratories | Distributed-feedback laser having enhanced mode selectivity |
| JP2513186B2 (ja) * | 1986-07-28 | 1996-07-03 | ソニー株式会社 | 分布帰還型半導体レ―ザの製造方法 |
| JPS63124484A (ja) * | 1986-11-12 | 1988-05-27 | Sharp Corp | 半導体レ−ザ素子 |
| JP2656248B2 (ja) * | 1987-02-27 | 1997-09-24 | 三菱電機株式会社 | 半導体レーザ |
| JPS63244694A (ja) * | 1987-03-30 | 1988-10-12 | Sony Corp | 分布帰還形半導体レ−ザ |
| JPS63260185A (ja) * | 1987-04-17 | 1988-10-27 | Sony Corp | 分布帰還形半導体レ−ザ |
| JP2768940B2 (ja) * | 1987-07-08 | 1998-06-25 | 三菱電機株式会社 | 単一波長発振半導体レーザ装置 |
| JPH073909B2 (ja) * | 1987-09-08 | 1995-01-18 | 三菱電機株式会社 | 半導体レーザの製造方法 |
| JP2687526B2 (ja) * | 1988-12-23 | 1997-12-08 | 日本電気株式会社 | 分布帰還型半導体レーザ及びその製造方法 |
-
1989
- 1989-05-22 JP JP1129346A patent/JP2619057B2/ja not_active Expired - Fee Related
- 1989-09-01 US US07/401,745 patent/US5020072A/en not_active Expired - Lifetime
- 1989-10-04 GB GB8922389A patent/GB2232814B/en not_active Expired - Lifetime
- 1989-11-03 DE DE3936694A patent/DE3936694C2/de not_active Expired - Lifetime
-
1990
- 1990-05-22 FR FR9006375A patent/FR2647276A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3936694C2 (de) | 1995-06-08 |
| DE3936694A1 (de) | 1990-11-29 |
| GB2232814B (en) | 1993-04-14 |
| GB2232814A (en) | 1990-12-19 |
| US5020072A (en) | 1991-05-28 |
| JP2619057B2 (ja) | 1997-06-11 |
| FR2647276A1 (fr) | 1990-11-23 |
| JPH02307287A (ja) | 1990-12-20 |
| GB8922389D0 (en) | 1989-11-22 |
