FR2614133B1 - Procede de production de contacts electriques a haut rendement avec du silicium amorphe n+ - Google Patents
Procede de production de contacts electriques a haut rendement avec du silicium amorphe n+Info
- Publication number
- FR2614133B1 FR2614133B1 FR888805093A FR8805093A FR2614133B1 FR 2614133 B1 FR2614133 B1 FR 2614133B1 FR 888805093 A FR888805093 A FR 888805093A FR 8805093 A FR8805093 A FR 8805093A FR 2614133 B1 FR2614133 B1 FR 2614133B1
- Authority
- FR
- France
- Prior art keywords
- high efficiency
- amorphous silicon
- electrical contacts
- producing high
- efficiency electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/039,854 US4774207A (en) | 1987-04-20 | 1987-04-20 | Method for producing high yield electrical contacts to N+ amorphous silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2614133A1 FR2614133A1 (fr) | 1988-10-21 |
FR2614133B1 true FR2614133B1 (fr) | 1991-12-27 |
Family
ID=21907678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888805093A Expired - Lifetime FR2614133B1 (fr) | 1987-04-20 | 1988-04-18 | Procede de production de contacts electriques a haut rendement avec du silicium amorphe n+ |
Country Status (6)
Country | Link |
---|---|
US (1) | US4774207A (fr) |
JP (1) | JP2556550B2 (fr) |
CA (1) | CA1305398C (fr) |
DE (1) | DE3812135B4 (fr) |
FR (1) | FR2614133B1 (fr) |
GB (1) | GB2216144B (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0283941A (ja) * | 1988-09-21 | 1990-03-26 | Fuji Xerox Co Ltd | 薄膜トランジスタの製造方法 |
US6362028B1 (en) * | 1999-08-19 | 2002-03-26 | Industrial Technology Research Institute | Method for fabricating TFT array and devices formed |
KR101112538B1 (ko) * | 2004-07-27 | 2012-03-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
TWI249251B (en) * | 2004-11-22 | 2006-02-11 | Au Optronics Corp | Fabrication method of thin film transistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276688A (en) * | 1980-01-21 | 1981-07-07 | Rca Corporation | Method for forming buried contact complementary MOS devices |
JPS5846193B2 (ja) * | 1980-07-15 | 1983-10-14 | 株式会社東芝 | 半導体装置 |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS584924A (ja) * | 1981-07-01 | 1983-01-12 | Hitachi Ltd | 半導体装置の電極形成方法 |
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
JPS59138379A (ja) * | 1983-01-27 | 1984-08-08 | Toshiba Corp | 半導体装置の製造方法 |
JPS59181070A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 光起電力装置 |
JPS59232456A (ja) * | 1983-06-16 | 1984-12-27 | Hitachi Ltd | 薄膜回路素子 |
JPS60180115A (ja) * | 1984-02-27 | 1985-09-13 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
JPS60206073A (ja) * | 1984-03-30 | 1985-10-17 | Hitachi Ltd | 薄膜トランジスタ |
US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
EP0211402B1 (fr) * | 1985-08-02 | 1991-05-08 | General Electric Company | Procédé et structure pour une matrice à transistors à film mince adressant des dispositifs d'affichage à cristaux liquides |
JPH06132577A (ja) * | 1992-10-21 | 1994-05-13 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物超伝導ジョセフソン素子の作製方法 |
JPH06267872A (ja) * | 1993-03-11 | 1994-09-22 | Nippon Steel Corp | 化学気相成長装置 |
-
1987
- 1987-04-20 US US07/039,854 patent/US4774207A/en not_active Expired - Lifetime
-
1988
- 1988-03-24 CA CA000562399A patent/CA1305398C/fr not_active Expired - Lifetime
- 1988-04-12 DE DE3812135A patent/DE3812135B4/de not_active Expired - Lifetime
- 1988-04-18 FR FR888805093A patent/FR2614133B1/fr not_active Expired - Lifetime
- 1988-04-19 GB GB8809190A patent/GB2216144B/en not_active Expired - Lifetime
- 1988-04-19 JP JP63094712A patent/JP2556550B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3812135A1 (de) | 1988-11-10 |
GB2216144A (en) | 1989-10-04 |
GB8809190D0 (en) | 1988-05-25 |
DE3812135B4 (de) | 2005-09-29 |
JP2556550B2 (ja) | 1996-11-20 |
GB2216144B (en) | 1991-07-10 |
JPS63289946A (ja) | 1988-11-28 |
CA1305398C (fr) | 1992-07-21 |
US4774207A (en) | 1988-09-27 |
FR2614133A1 (fr) | 1988-10-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property |