FR2613547B1 - Laser semiconducteur a heterostructure enterree - Google Patents

Laser semiconducteur a heterostructure enterree

Info

Publication number
FR2613547B1
FR2613547B1 FR8704576A FR8704576A FR2613547B1 FR 2613547 B1 FR2613547 B1 FR 2613547B1 FR 8704576 A FR8704576 A FR 8704576A FR 8704576 A FR8704576 A FR 8704576A FR 2613547 B1 FR2613547 B1 FR 2613547B1
Authority
FR
France
Prior art keywords
heterostructure
underground
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8704576A
Other languages
English (en)
Other versions
FR2613547A1 (fr
Inventor
Claude Carriere
Jean Renard
Corinne Lalaas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Original Assignee
Alcatel CIT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA filed Critical Alcatel CIT SA
Priority to FR8704576A priority Critical patent/FR2613547B1/fr
Publication of FR2613547A1 publication Critical patent/FR2613547A1/fr
Application granted granted Critical
Publication of FR2613547B1 publication Critical patent/FR2613547B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
FR8704576A 1987-04-01 1987-04-01 Laser semiconducteur a heterostructure enterree Expired FR2613547B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8704576A FR2613547B1 (fr) 1987-04-01 1987-04-01 Laser semiconducteur a heterostructure enterree

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8704576A FR2613547B1 (fr) 1987-04-01 1987-04-01 Laser semiconducteur a heterostructure enterree

Publications (2)

Publication Number Publication Date
FR2613547A1 FR2613547A1 (fr) 1988-10-07
FR2613547B1 true FR2613547B1 (fr) 1989-06-23

Family

ID=9349675

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8704576A Expired FR2613547B1 (fr) 1987-04-01 1987-04-01 Laser semiconducteur a heterostructure enterree

Country Status (1)

Country Link
FR (1) FR2613547B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1726624B (zh) * 2002-12-20 2010-05-26 克里公司 形成包括平台结构和多层钝化层的半导体器件和相关器件的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361593B1 (ko) * 2000-11-23 2002-11-22 주식회사일진 볼록 요철을 갖는 광학집적회로 소자, 그 제조방법, 그광학집적 회로 소자를 이용하여 제조한 광통신용 송수신장치의 모듈

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
JPS6129184A (ja) * 1984-07-20 1986-02-10 Hitachi Ltd 発光素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1726624B (zh) * 2002-12-20 2010-05-26 克里公司 形成包括平台结构和多层钝化层的半导体器件和相关器件的方法

Also Published As

Publication number Publication date
FR2613547A1 (fr) 1988-10-07

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Legal Events

Date Code Title Description
ST Notification of lapse