FR2582676B1 - Procede d'etamage des connexions exterieures d'un dispositif a semi-conducteur encapsule - Google Patents

Procede d'etamage des connexions exterieures d'un dispositif a semi-conducteur encapsule

Info

Publication number
FR2582676B1
FR2582676B1 FR8607865A FR8607865A FR2582676B1 FR 2582676 B1 FR2582676 B1 FR 2582676B1 FR 8607865 A FR8607865 A FR 8607865A FR 8607865 A FR8607865 A FR 8607865A FR 2582676 B1 FR2582676 B1 FR 2582676B1
Authority
FR
France
Prior art keywords
tinning
semiconductor device
external connections
encapsulated semiconductor
encapsulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8607865A
Other languages
English (en)
Other versions
FR2582676A1 (fr
Inventor
Vijay M Sajja
Ranjan Mathew
Jagdish Belani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2582676A1 publication Critical patent/FR2582676A1/fr
Application granted granted Critical
Publication of FR2582676B1 publication Critical patent/FR2582676B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
FR8607865A 1985-06-03 1986-06-02 Procede d'etamage des connexions exterieures d'un dispositif a semi-conducteur encapsule Expired FR2582676B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/740,170 US4589962A (en) 1985-06-03 1985-06-03 Solder plating process and semiconductor product

Publications (2)

Publication Number Publication Date
FR2582676A1 FR2582676A1 (fr) 1986-12-05
FR2582676B1 true FR2582676B1 (fr) 1988-10-07

Family

ID=24975344

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8607865A Expired FR2582676B1 (fr) 1985-06-03 1986-06-02 Procede d'etamage des connexions exterieures d'un dispositif a semi-conducteur encapsule

Country Status (7)

Country Link
US (1) US4589962A (fr)
JP (1) JPS61292350A (fr)
DE (1) DE3616715A1 (fr)
FR (1) FR2582676B1 (fr)
GB (1) GB2176208B (fr)
HK (1) HK3390A (fr)
SG (1) SG77289G (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5320737A (en) * 1989-08-10 1994-06-14 Olin Corporation Treatment to reduce solder plating whisker formation
US5545440A (en) * 1994-12-05 1996-08-13 At&T Global Information Solutions Company (Aka Ncr Corporation) Method and apparatus for polymer coating of substrates
US5597469A (en) * 1995-02-13 1997-01-28 International Business Machines Corporation Process for selective application of solder to circuit packages
DE69712999T2 (de) 1996-07-26 2003-01-23 Nec Corp Festelektrolytkondensator mit vorplattierten Leiteranschlüssen und dessen Herstellungsverfahren
US6773828B1 (en) 2003-04-18 2004-08-10 Ase Electronics (M) Sdn. Bhd. Surface preparation to eliminate whisker growth caused by plating process interruptions
JP2005060822A (ja) * 2003-08-08 2005-03-10 Rohm & Haas Electronic Materials Llc 複合基体の電気メッキ
TW201205882A (en) * 2010-07-16 2012-02-01 Foxsemicon Integrated Tech Inc Manufacturing method for LED light emitting device
FR3060610B1 (fr) * 2016-12-19 2020-02-07 Veolia Environnement-VE Procede electrolytique pour extraire de l'etain et/ou du plomb compris dans un melange conducteur
CN114808051A (zh) * 2021-10-20 2022-07-29 中山市一鸣电子材料有限公司 一种用于磁芯电感电镀的镀锡液及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2318559A (en) * 1941-04-30 1943-05-04 Monsanto Chemicals Material for and process of pickling copper or its alloys
US3427232A (en) * 1967-03-13 1969-02-11 Us Air Force Method of electrode plating silver on magnesium
US3623532A (en) * 1969-03-20 1971-11-30 Southwire Co Continuous pickling of cast rod
US3915812A (en) * 1972-06-28 1975-10-28 Nippon Kokan Kk Method of manufacturing tinned plates having high corrosion resistant property
JPS5436575B2 (fr) * 1973-02-21 1979-11-09
GB1469547A (en) * 1973-06-28 1977-04-06 Minnesota Mining & Mfg Tin/lead electr-plating baths
JPS6015716B2 (ja) * 1977-10-21 1985-04-20 デイツプソ−ル株式会社 錫または錫合金電気めつき用浴の安定化方法
DE3040676A1 (de) * 1980-10-29 1982-05-27 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen von halbleiteranordnugen
JPS5967387A (ja) * 1982-10-08 1984-04-17 Hiyougoken すず、鉛及びすず―鉛合金メッキ浴
JPS5980957A (ja) * 1982-10-29 1984-05-10 Matsushita Electronics Corp 半導体装置
JPS59211562A (ja) * 1983-05-17 1984-11-30 Mitsubishi Electric Corp サ−デイツプパツケ−ジはんだめつき法

Also Published As

Publication number Publication date
HK3390A (en) 1990-01-25
US4589962A (en) 1986-05-20
GB8609149D0 (en) 1986-05-21
GB2176208A (en) 1986-12-17
SG77289G (en) 1990-04-20
FR2582676A1 (fr) 1986-12-05
DE3616715A1 (de) 1986-12-04
JPS61292350A (ja) 1986-12-23
GB2176208B (en) 1989-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse