FR2580272B1 - Procede pour la production de si3n4 sous forme b - Google Patents
Procede pour la production de si3n4 sous forme bInfo
- Publication number
- FR2580272B1 FR2580272B1 FR858513540A FR8513540A FR2580272B1 FR 2580272 B1 FR2580272 B1 FR 2580272B1 FR 858513540 A FR858513540 A FR 858513540A FR 8513540 A FR8513540 A FR 8513540A FR 2580272 B1 FR2580272 B1 FR 2580272B1
- Authority
- FR
- France
- Prior art keywords
- si3n4
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
- C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60077157A JPS61236604A (ja) | 1985-04-11 | 1985-04-11 | β−Si↓3N↓4の合成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2580272A1 FR2580272A1 (fr) | 1986-10-17 |
FR2580272B1 true FR2580272B1 (fr) | 1990-07-27 |
Family
ID=13625956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR858513540A Expired - Fee Related FR2580272B1 (fr) | 1985-04-11 | 1985-09-12 | Procede pour la production de si3n4 sous forme b |
Country Status (5)
Country | Link |
---|---|
US (1) | US4888142A (fr) |
JP (1) | JPS61236604A (fr) |
DE (1) | DE3531790A1 (fr) |
FR (1) | FR2580272B1 (fr) |
GB (1) | GB2173493B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340711A (ja) * | 1986-08-06 | 1988-02-22 | Ngk Insulators Ltd | β型窒化珪素の製造法 |
US5187129A (en) * | 1987-12-21 | 1993-02-16 | Eaton Corporation | Process for making silicon nitride and powders and articles made therefrom |
FR2641775B1 (fr) * | 1989-01-17 | 1993-07-16 | Comp Generale Electricite | Procede de traitement d'une piece en nitrure de silicium |
DE3907916A1 (de) * | 1989-03-11 | 1990-09-13 | Bayer Ag | Vorrichtung zum dosieren von siliciumschmelzen |
US5156830A (en) * | 1990-07-24 | 1992-10-20 | Eaton Corporation | Process for preparing an alpha-phase silicon nitride material and thereafter converting to non-densified beta-phase material |
US5300322A (en) * | 1992-03-10 | 1994-04-05 | Martin Marietta Energy Systems, Inc. | Molybdenum enhanced low-temperature deposition of crystalline silicon nitride |
US5538675A (en) * | 1994-04-14 | 1996-07-23 | The Dow Chemical Company | Method for producing silicon nitride/silicon carbide composite |
DE10043599A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten |
US6461979B1 (en) | 2002-02-13 | 2002-10-08 | Taiwan Semiconductor Manufacturing Company | LPCVD furnace uniformity improvement by temperature ramp down deposition system |
NO317080B1 (no) * | 2002-08-15 | 2004-08-02 | Crusin As | Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler |
JP5200741B2 (ja) * | 2007-08-01 | 2013-06-05 | 三菱化学株式会社 | 結晶性窒化珪素及びその製造方法、並びに、それを用いた蛍光体、該蛍光体含有組成物、発光装置、照明装置、画像表示装置、焼結体及び顔料 |
WO2009017206A1 (fr) * | 2007-08-01 | 2009-02-05 | Mitsubishi Chemical Corporation | Matière luminescente et son procédé de fabrication, nitrure de silicium cristallin et son procédé de fabrication, composition contenant une substance luminescente, dispositif émettant de la lumière utilisant la substance luminescente, dispositif d'affichage d'image et dispositif d'é |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3175918A (en) * | 1960-10-07 | 1965-03-30 | Carborundum Co | Porous refractory bodies and the manufacture thereof |
GB942082A (en) * | 1961-02-01 | 1963-11-20 | Nat Res Dev | An improved heat resisting material comprising self-bonded silicon nitride with or without silicon carbide dispersed therein and method for producing it |
GB1117788A (en) * | 1964-11-27 | 1968-06-26 | Plessey Uk Ltd | Improvements relating to silicon nitride |
GB1092637A (en) * | 1967-11-27 | 1967-11-29 | Lucas Industries Ltd | Silicon nitride products |
US3835211A (en) * | 1968-12-11 | 1974-09-10 | Lucas Industries Ltd | Silicon nitride products |
GB1274229A (en) * | 1968-12-11 | 1972-05-17 | Lucas Industries Ltd | Silicon nitride products |
GB1340696A (en) * | 1970-07-10 | 1973-12-12 | Lucas Industries Ltd | Method of manufacturing silicon nitride products |
DE2149735C3 (de) * | 1971-10-05 | 1978-10-19 | Annawerk Gmbh, 8633 Roedental | Verfahren zur Herstellung von Formkörpern großer Härte aus Siliziumnitrid und/oder Siliziumoxynitrid |
US3992497A (en) * | 1973-05-18 | 1976-11-16 | Westinghouse Electric Corporation | Pressureless sintering silicon nitride powders |
GB1522705A (en) * | 1974-11-11 | 1978-08-23 | Asea Ab | Method of manufacturing bodies of silicon nitride |
US4101616A (en) * | 1975-10-30 | 1978-07-18 | Gte Sylvania Incorporated | Process for producing Si3 N4 article |
US4073845A (en) * | 1976-01-29 | 1978-02-14 | Gte Sylvania Incorporated | High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder |
US4090851A (en) * | 1976-10-15 | 1978-05-23 | Rca Corporation | Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets |
US4310477A (en) * | 1977-03-25 | 1982-01-12 | Ford Motor Company | Method of making a silicon nitride part |
CA1092325A (fr) * | 1977-07-05 | 1980-12-30 | Gerald Q. Weaver | Procede d'obtention de nitrure de beta-silicium haute densite |
GB1602822A (en) * | 1977-09-22 | 1981-11-18 | Tokyo Shibaura Electric Co | Method for manufacturing ceramic powder materials |
JPS5490214A (en) * | 1977-12-27 | 1979-07-17 | Toshiba Ceramics Co | Method of making silicon nitride formed body |
JPS5596638A (en) * | 1979-01-18 | 1980-07-23 | Fuji Electric Co Ltd | Method of coating photo resist on silicon nitride film |
US4254161A (en) * | 1979-08-16 | 1981-03-03 | International Business Machines Corporation | Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking |
JPS5747706A (en) * | 1980-09-04 | 1982-03-18 | Toshio Hirai | Lump of silicon nitride containing ti and its manufacture |
US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
JPS5772318A (en) * | 1980-10-24 | 1982-05-06 | Seiko Epson Corp | Vapor growth method |
JPS5860677A (ja) * | 1981-09-30 | 1983-04-11 | 日本特殊陶業株式会社 | 高靭性窒化珪素焼結体の製造法 |
US4500483A (en) * | 1982-03-19 | 1985-02-19 | United Technologies Corporation | Manufacture of hollow CVD silicon nitride articles |
US4505720A (en) * | 1983-06-29 | 1985-03-19 | Minnesota Mining And Manufacturing Company | Granular silicon carbide abrasive grain coated with refractory material, method of making the same and articles made therewith |
JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
US4717693A (en) * | 1986-10-24 | 1988-01-05 | Gte Products Corporation | Process for producing beta silicon nitride fibers |
-
1985
- 1985-04-11 JP JP60077157A patent/JPS61236604A/ja active Pending
- 1985-09-06 DE DE19853531790 patent/DE3531790A1/de not_active Ceased
- 1985-09-10 GB GB08522403A patent/GB2173493B/en not_active Expired
- 1985-09-12 FR FR858513540A patent/FR2580272B1/fr not_active Expired - Fee Related
-
1987
- 1987-12-22 US US07/139,109 patent/US4888142A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS61236604A (ja) | 1986-10-21 |
GB2173493A (en) | 1986-10-15 |
DE3531790A1 (de) | 1986-10-23 |
GB2173493B (en) | 1988-12-21 |
FR2580272A1 (fr) | 1986-10-17 |
GB8522403D0 (en) | 1985-10-16 |
US4888142A (en) | 1989-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |