FR2575330B1 - Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur - Google Patents

Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur

Info

Publication number
FR2575330B1
FR2575330B1 FR8518395A FR8518395A FR2575330B1 FR 2575330 B1 FR2575330 B1 FR 2575330B1 FR 8518395 A FR8518395 A FR 8518395A FR 8518395 A FR8518395 A FR 8518395A FR 2575330 B1 FR2575330 B1 FR 2575330B1
Authority
FR
France
Prior art keywords
forming
semiconductor device
buried layer
collector region
monolithic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8518395A
Other languages
English (en)
Other versions
FR2575330A1 (fr
Inventor
Salvatore Musumeci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2575330A1 publication Critical patent/FR2575330A1/fr
Application granted granted Critical
Publication of FR2575330B1 publication Critical patent/FR2575330B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
FR8518395A 1984-12-20 1985-12-12 Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur Expired FR2575330B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8406633A IT1214808B (it) 1984-12-20 1984-12-20 Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli

Publications (2)

Publication Number Publication Date
FR2575330A1 FR2575330A1 (fr) 1986-06-27
FR2575330B1 true FR2575330B1 (fr) 1989-08-18

Family

ID=11121628

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8518395A Expired FR2575330B1 (fr) 1984-12-20 1985-12-12 Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur

Country Status (6)

Country Link
US (1) US4721684A (fr)
JP (1) JPS61181161A (fr)
DE (1) DE3545040C2 (fr)
FR (1) FR2575330B1 (fr)
GB (1) GB2169444B (fr)
IT (1) IT1214808B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
IT1215024B (it) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione
US4855244A (en) * 1987-07-02 1989-08-08 Texas Instruments Incorporated Method of making vertical PNP transistor in merged bipolar/CMOS technology
IT1221587B (it) * 1987-09-07 1990-07-12 S G S Microelettronics Spa Procedimento di fabbricazione di un dispositivo integrato monolitico a semiconduttore avente strati epitas siali a bassa concentrazione di impurita'
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE38510E1 (en) * 1987-12-22 2004-05-04 Stmicroelectronics Srl Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
US5024967A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Doping procedures for semiconductor devices
US5262345A (en) * 1990-01-25 1993-11-16 Analog Devices, Inc. Complimentary bipolar/CMOS fabrication method
EP0439899A3 (en) * 1990-01-25 1991-11-06 Precision Monolithics Inc. Complementary bipolar transistors compatible with cmos process
IT1241050B (it) * 1990-04-20 1993-12-29 Cons Ric Microelettronica Processo di formazione di una regione sepolta di drain o di collettore in dispositivi monolitici a semiconduttore.
US5442191A (en) * 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
US5144409A (en) * 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
EP0555496B1 (fr) * 1991-07-03 1997-03-26 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Structure de transistor bipolaire latérale avec circuit intégré de contrÔle et transistor de puissance intégré et leur procédé de fabrication
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US6566217B1 (en) * 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device
DE69618343D1 (de) * 1996-05-21 2002-02-07 Cons Ric Microelettronica Leistungshalbleiterbauelementstruktur mit vertikalem PNP-Transistor
SE519975C2 (sv) 1999-06-23 2003-05-06 Ericsson Telefon Ab L M Halvledarstruktur för högspänningshalvledarkomponenter
DE10044838C2 (de) 2000-09-11 2002-08-08 Infineon Technologies Ag Halbleiterbauelement und Verfahren zur Herstellung eines solchen
US6894366B2 (en) * 2000-10-10 2005-05-17 Texas Instruments Incorporated Bipolar junction transistor with a counterdoped collector region
JP4775683B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
KR102419162B1 (ko) 2015-03-17 2022-07-11 삼성전자주식회사 패턴 검사 방법 및 그를 사용하는 기판 제조 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3576475A (en) * 1968-08-29 1971-04-27 Texas Instruments Inc Field effect transistors for integrated circuits and methods of manufacture
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US3812519A (en) * 1970-02-07 1974-05-21 Tokyo Shibaura Electric Co Silicon double doped with p and as or b and as
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
US3971059A (en) * 1974-09-23 1976-07-20 National Semiconductor Corporation Complementary bipolar transistors having collector diffused isolation
US4132573A (en) * 1977-02-08 1979-01-02 Murata Manufacturing Co., Ltd. Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion
DE2710878A1 (de) * 1977-03-12 1978-09-14 Itt Ind Gmbh Deutsche Verfahren zum herstellen einer an der oberflaeche eines halbleiterkoerpers aus silicium liegenden zone einer monolithisch integrierten i hoch 2 l-schaltung
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
ZA785953B (en) * 1977-11-03 1979-09-26 Int Computers Ltd Integrated circuits and methods of manufacture thereof
JPS54128268A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Multi-diffusion method of impurity
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
JPS5734357A (en) * 1980-08-09 1982-02-24 Sanken Electric Co Ltd Semiconductor integrated circuit
JPS57106047A (en) * 1980-12-23 1982-07-01 Sony Corp Manufacture of semiconductor integrated circuit device
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.

Also Published As

Publication number Publication date
GB8530729D0 (en) 1986-01-22
GB2169444A (en) 1986-07-09
DE3545040C2 (de) 1995-07-20
IT8406633A0 (it) 1984-12-20
DE3545040A1 (de) 1986-06-26
IT1214808B (it) 1990-01-18
JPS61181161A (ja) 1986-08-13
GB2169444B (en) 1988-11-30
US4721684A (en) 1988-01-26
FR2575330A1 (fr) 1986-06-27

Similar Documents

Publication Publication Date Title
FR2575330B1 (fr) Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur
FR2566115B1 (fr) Procede et dispositif de mesure de l'epaisseur de paroi d'une couche
FR2517881B1 (fr) Procede de formation d'elements de taille inferieure au micron dans des dispositifs a semi-conducteur
FR2578873B3 (fr) Procede et dispositif pour l'amelioration de fondations
FR2574180B1 (fr) Procede et dispositif pour determiner l'angle de contact d'une goutte de liquide posee sur un substrat horizontal solide ou liquide
FR2647960B1 (fr) Structure d'electrode pour une cellule solaire et procede et appareil de fabrication correspondants
FR2578681B1 (fr) Procede pour former une couche mince monocristalline d'element semi-conducteur
FR2669467B1 (fr) Procede de formation d'une couche d'oxyde de champ d'un dispositif a semi-conducteur.
FR2568285B1 (fr) Procede et dispositif pour le revetement continu de la surface d'un pont
FR2565689B1 (fr) Procede et dispositif pour la determination du point de trouble d'un gazole
FR2607481B1 (fr) Procede et dispositif de formation d'une couche d'articles sur une table d'accumulation
FR2522169B1 (fr) Procede et dispositif pour empecher les ecarts de positionnement d'un element thermiquement deformable dans une machine-outil
FR2575601B1 (fr) Procede et dispositif de determination de parametres electriques d'une couche semi-conductrice en fonction de la profondeur
BE863535A (fr) Procede et dispositif pour realiser une serie de rainures profilees voisines dans la surface laterale d'un corps de revolution
FR2553232B1 (fr) Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin
FR2575332B1 (fr) Dispositif semi-conducteur ayant une couche metallisee de plusieurs epaisseurs et procede pour sa fabrication
FR2548831B1 (fr) Procede de realisation d'au moins une couche profonde dans un dispositif a semi-conducteur
FR2605915B1 (fr) Dispositif pour la formation d'un coin dans des tasseaux flexibles apposes sur une plaque de verre
FR2576011B1 (fr) Procede et dispositif pour la fabrication d'un vitrage de securite
FR2576012B1 (fr) Procede et dispositif pour la fabrication d'un vitrage de securite
FR2588277B1 (fr) Procede de depot d'une couche de tungstene sur une surface dielectrique
FR2565643B1 (fr) Dispositif d'etancheite pour roulements
FR2523480B1 (fr) Procede de depot d'une couche de protection metallique et/ou ceramique sur un substrat
FR2560903B3 (fr) Dispositif flottant de reprise d'un liquide en surface
FR2573724B1 (fr) Procede et dispositif opto-electronique permettant a une structure mobile de suivre les deplacements d'une autre structure.

Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse