FR2567545B1 - Procede de fabrication de monocristaux gaas - Google Patents

Procede de fabrication de monocristaux gaas

Info

Publication number
FR2567545B1
FR2567545B1 FR858510890A FR8510890A FR2567545B1 FR 2567545 B1 FR2567545 B1 FR 2567545B1 FR 858510890 A FR858510890 A FR 858510890A FR 8510890 A FR8510890 A FR 8510890A FR 2567545 B1 FR2567545 B1 FR 2567545B1
Authority
FR
France
Prior art keywords
single crystals
gaas single
manufacturing gaas
manufacturing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858510890A
Other languages
English (en)
Other versions
FR2567545A1 (fr
Inventor
Junichi Nishizawa
Yoshihiro Kokubun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of FR2567545A1 publication Critical patent/FR2567545A1/fr
Application granted granted Critical
Publication of FR2567545B1 publication Critical patent/FR2567545B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR858510890A 1984-07-16 1985-07-16 Procede de fabrication de monocristaux gaas Expired - Lifetime FR2567545B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59146006A JPH0630339B2 (ja) 1984-07-16 1984-07-16 ＧａＡｓ単結晶の製造方法

Publications (2)

Publication Number Publication Date
FR2567545A1 FR2567545A1 (fr) 1986-01-17
FR2567545B1 true FR2567545B1 (fr) 1990-04-27

Family

ID=15397963

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858510890A Expired - Lifetime FR2567545B1 (fr) 1984-07-16 1985-07-16 Procede de fabrication de monocristaux gaas

Country Status (5)

Country Link
US (1) US5542373A (fr)
JP (1) JPH0630339B2 (fr)
DE (1) DE3525397C2 (fr)
FR (1) FR2567545B1 (fr)
GB (1) GB2163181B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
GB2234529B (en) * 1989-07-26 1993-06-02 Stc Plc Epitaxial growth process
GB2248456A (en) * 1990-09-12 1992-04-08 Philips Electronic Associated A method of growing III-V compound semiconductor material on a substrate
US5420437A (en) * 1994-01-11 1995-05-30 Siess; Harold E. Method and apparatus for generation and implantation of ions

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1162661B (de) * 1960-03-31 1964-02-06 Wacker Chemie Gmbh Verfahren zur gleichzeitigen und gleichmaessigen Dotierung
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
NL6707515A (fr) * 1967-05-31 1968-12-02
FR2116194B1 (fr) * 1970-02-27 1974-09-06 Labo Electronique Physique
DE2326803A1 (de) * 1973-05-25 1974-12-19 Siemens Ag Verfahren zur herstellung einer mit galliumarsenid im wesentlichen gesaettigten galliumschmelze, zur verwendung als quellenmaterial bei der gasphasen-epitaxie
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
GB1498459A (en) * 1975-12-23 1978-01-18 Phizi I Im P N Lebedeva An Sss Growing semiconductor epitaxial films
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
JPS5710920A (en) * 1980-06-23 1982-01-20 Canon Inc Film forming process
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
FR2501908B2 (fr) * 1981-03-11 1990-08-17 Labo Electronique Physique Croissance epitaxiale acceleree en phase vapeur, sous pression reduite
US4434025A (en) * 1981-06-04 1984-02-28 Robillard Jean J Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
JPS5899198A (ja) * 1981-12-07 1983-06-13 Semiconductor Res Found 気相成長方法
GB2119278B (en) * 1982-04-13 1987-04-15 Michael Paul Neary Improvements in or relating to a chemical method
US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
US4451503A (en) * 1982-06-30 1984-05-29 International Business Machines Corporation Photo deposition of metals with far UV radiation
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
FR2544752B1 (fr) * 1983-04-25 1985-07-05 Commissariat Energie Atomique Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement
US4632710A (en) * 1983-05-10 1986-12-30 Raytheon Company Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPS60221394A (ja) * 1984-04-18 1985-11-06 Res Dev Corp Of Japan ＧａＡｓ単結晶の製造方法
JPS60221393A (ja) * 1984-04-18 1985-11-06 Res Dev Corp Of Japan ＧａＡｓ単結晶の製造方法
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes

Also Published As

Publication number Publication date
US5542373A (en) 1996-08-06
JPH0630339B2 (ja) 1994-04-20
JPS6126215A (ja) 1986-02-05
GB2163181B (en) 1988-07-27
FR2567545A1 (fr) 1986-01-17
DE3525397C2 (de) 1995-10-05
GB8517875D0 (en) 1985-08-21
DE3525397A1 (de) 1986-02-20
GB2163181A (en) 1986-02-19

Similar Documents

Publication Publication Date Title
RO93878A (fr) Procede de cristallisation
FR2543741B1 (fr) Procede de fabrication de supraconducteurs
FR2734188B1 (fr) Procede de fabrication de pieces monocristallines
FR2574686B1 (fr) Procede de fabrication de disques de turbine
FI851463L (fi) Kiinteän, kiteisen nedokromiilinatriumin valmistusmenetelmä
FR2640254B1 (fr) Procede de fabrication de trichloromonosilane
FR2582197B1 (fr) Procede de fabrication de casques de
FR2575198B1 (fr) Procede de fabrication de pate de cellulose
FR2558821B1 (fr) Procede de fabrication de verre
EP0177132A3 (en) Apparatus for manufacturing compound semiconductor single crystal
FR2575762B1 (fr) Procede de fabrication de plaquettes en alliage de zirconium
PT83802A (fr) Procede de fabrication d:un condiment
FR2555176B1 (fr) Procede de preparation de sulfonylurees
FR2577162B1 (fr) Procede de fabrication de moules
FR2724857B1 (fr) Procede de fabrication d'aubes cristallines
FR2567522B1 (fr) Procede de fabrication de dianydride de silylnorbornane
FR2567418B1 (fr) Procede de preparation de microcapsules
FR2630105B1 (fr) Procede de fabrication des dialkyldisulfures inferieurs
FR2567542B1 (fr) Procede de
FR2567545B1 (fr) Procede de fabrication de monocristaux gaas
FR2587837B1 (fr) Procede de fabrication de transistors bipolaires
MA20796A1 (fr) Procede de fabrication de manganate de potassium
FR2516933B1 (fr) Procede de fabrication de malt
FR2609327B1 (fr) Procede perfectionne de fabrication de neige artificielle
FR2571393B1 (fr) Procede de fabrication de pate de cellulose

Legal Events

Date Code Title Description
TP Transmission of property
TQ Partial transmission of property