FR2501908B2 - Croissance epitaxiale acceleree en phase vapeur, sous pression reduite - Google Patents
Croissance epitaxiale acceleree en phase vapeur, sous pression reduiteInfo
- Publication number
- FR2501908B2 FR2501908B2 FR818104852A FR8104852A FR2501908B2 FR 2501908 B2 FR2501908 B2 FR 2501908B2 FR 818104852 A FR818104852 A FR 818104852A FR 8104852 A FR8104852 A FR 8104852A FR 2501908 B2 FR2501908 B2 FR 2501908B2
- Authority
- FR
- France
- Prior art keywords
- accelerated
- steam
- reduced pressure
- epitaxial growth
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR818104852A FR2501908B2 (fr) | 1981-03-11 | 1981-03-11 | Croissance epitaxiale acceleree en phase vapeur, sous pression reduite |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR818104852A FR2501908B2 (fr) | 1981-03-11 | 1981-03-11 | Croissance epitaxiale acceleree en phase vapeur, sous pression reduite |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2501908A2 FR2501908A2 (fr) | 1982-09-17 |
FR2501908B2 true FR2501908B2 (fr) | 1990-08-17 |
Family
ID=9256107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR818104852A Expired - Lifetime FR2501908B2 (fr) | 1981-03-11 | 1981-03-11 | Croissance epitaxiale acceleree en phase vapeur, sous pression reduite |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2501908B2 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0630339B2 (ja) * | 1984-07-16 | 1994-04-20 | 新技術事業団 | GaAs単結晶の製造方法 |
US4636268A (en) * | 1984-11-30 | 1987-01-13 | At&T Bell Laboratories | Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
DE3721638A1 (de) * | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Materialsparendes verfahren zur herstellung von mischkristallen |
US5348911A (en) * | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL121550C (fr) * | 1959-12-11 |
-
1981
- 1981-03-11 FR FR818104852A patent/FR2501908B2/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2501908A2 (fr) | 1982-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |