FR2587837B1 - Procede de fabrication de transistors bipolaires - Google Patents

Procede de fabrication de transistors bipolaires

Info

Publication number
FR2587837B1
FR2587837B1 FR868613177A FR8613177A FR2587837B1 FR 2587837 B1 FR2587837 B1 FR 2587837B1 FR 868613177 A FR868613177 A FR 868613177A FR 8613177 A FR8613177 A FR 8613177A FR 2587837 B1 FR2587837 B1 FR 2587837B1
Authority
FR
France
Prior art keywords
bipolar transistors
manufacturing bipolar
manufacturing
transistors
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR868613177A
Other languages
English (en)
Other versions
FR2587837A1 (fr
Inventor
Peter Denis Scovell
Roger Leslie Baker
David William Mcneill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Publication of FR2587837A1 publication Critical patent/FR2587837A1/fr
Application granted granted Critical
Publication of FR2587837B1 publication Critical patent/FR2587837B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR868613177A 1985-09-21 1986-09-19 Procede de fabrication de transistors bipolaires Expired FR2587837B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8523369A GB2180688B (en) 1985-09-21 1985-09-21 Transistors

Publications (2)

Publication Number Publication Date
FR2587837A1 FR2587837A1 (fr) 1987-03-27
FR2587837B1 true FR2587837B1 (fr) 1989-05-12

Family

ID=10585545

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868613177A Expired FR2587837B1 (fr) 1985-09-21 1986-09-19 Procede de fabrication de transistors bipolaires

Country Status (5)

Country Link
US (1) US4755487A (fr)
JP (1) JPS6269555A (fr)
DE (1) DE3631425A1 (fr)
FR (1) FR2587837B1 (fr)
GB (1) GB2180688B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882294A (en) * 1988-08-17 1989-11-21 Delco Electronics Corporation Process for forming an epitaxial layer having portions of different thicknesses
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
US5519193A (en) * 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5420050A (en) * 1993-12-20 1995-05-30 United Technologies Corporation Method of enhancing the current gain of bipolar junction transistors
EP0793860B1 (fr) 1994-11-24 2001-05-30 Infineon Technologies AG Transistor bipolaire lateral
KR100379136B1 (ko) 1998-10-02 2003-04-08 인터내셔널 비지네스 머신즈 코포레이션 반도체 소자 형성 방법과 반도체 소자
US6429101B1 (en) 1999-01-29 2002-08-06 International Business Machines Corporation Method of forming thermally stable polycrystal to single crystal electrical contact structure
US6284581B1 (en) * 1999-02-18 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors
US6228732B1 (en) 1999-12-22 2001-05-08 Sony Corporation Tunnel nitride for improved polysilicon emitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4181538A (en) * 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
US4523370A (en) * 1983-12-05 1985-06-18 Ncr Corporation Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction
JPS61134055A (ja) * 1984-12-04 1986-06-21 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
DE3631425A1 (de) 1987-04-02
GB2180688A (en) 1987-04-01
FR2587837A1 (fr) 1987-03-27
JPS6269555A (ja) 1987-03-30
US4755487A (en) 1988-07-05
GB2180688B (en) 1989-09-13
GB8523369D0 (en) 1985-10-23

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Legal Events

Date Code Title Description
ER Errata listed in the french official journal (bopi)

Free format text: 13/87

ST Notification of lapse