FR2587837B1 - Procede de fabrication de transistors bipolaires - Google Patents
Procede de fabrication de transistors bipolairesInfo
- Publication number
- FR2587837B1 FR2587837B1 FR868613177A FR8613177A FR2587837B1 FR 2587837 B1 FR2587837 B1 FR 2587837B1 FR 868613177 A FR868613177 A FR 868613177A FR 8613177 A FR8613177 A FR 8613177A FR 2587837 B1 FR2587837 B1 FR 2587837B1
- Authority
- FR
- France
- Prior art keywords
- bipolar transistors
- manufacturing bipolar
- manufacturing
- transistors
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
- H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8523369A GB2180688B (en) | 1985-09-21 | 1985-09-21 | Transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2587837A1 FR2587837A1 (fr) | 1987-03-27 |
FR2587837B1 true FR2587837B1 (fr) | 1989-05-12 |
Family
ID=10585545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR868613177A Expired FR2587837B1 (fr) | 1985-09-21 | 1986-09-19 | Procede de fabrication de transistors bipolaires |
Country Status (5)
Country | Link |
---|---|
US (1) | US4755487A (fr) |
JP (1) | JPS6269555A (fr) |
DE (1) | DE3631425A1 (fr) |
FR (1) | FR2587837B1 (fr) |
GB (1) | GB2180688B (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4882294A (en) * | 1988-08-17 | 1989-11-21 | Delco Electronics Corporation | Process for forming an epitaxial layer having portions of different thicknesses |
JPH03215391A (ja) * | 1989-06-26 | 1991-09-20 | Canon Inc | 結晶の成長方法 |
US5519193A (en) * | 1992-10-27 | 1996-05-21 | International Business Machines Corporation | Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation |
US5420050A (en) * | 1993-12-20 | 1995-05-30 | United Technologies Corporation | Method of enhancing the current gain of bipolar junction transistors |
EP0793860B1 (fr) | 1994-11-24 | 2001-05-30 | Infineon Technologies AG | Transistor bipolaire lateral |
KR100379136B1 (ko) | 1998-10-02 | 2003-04-08 | 인터내셔널 비지네스 머신즈 코포레이션 | 반도체 소자 형성 방법과 반도체 소자 |
US6429101B1 (en) | 1999-01-29 | 2002-08-06 | International Business Machines Corporation | Method of forming thermally stable polycrystal to single crystal electrical contact structure |
US6284581B1 (en) * | 1999-02-18 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors |
US6228732B1 (en) | 1999-12-22 | 2001-05-08 | Sony Corporation | Tunnel nitride for improved polysilicon emitter |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
US4181538A (en) * | 1978-09-26 | 1980-01-01 | The United States Of America As Represented By The United States Department Of Energy | Method for making defect-free zone by laser-annealing of doped silicon |
US4523370A (en) * | 1983-12-05 | 1985-06-18 | Ncr Corporation | Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction |
JPS61134055A (ja) * | 1984-12-04 | 1986-06-21 | Sony Corp | 半導体装置の製造方法 |
-
1985
- 1985-09-21 GB GB8523369A patent/GB2180688B/en not_active Expired
-
1986
- 1986-09-08 US US06/904,547 patent/US4755487A/en not_active Expired - Fee Related
- 1986-09-16 DE DE19863631425 patent/DE3631425A1/de not_active Withdrawn
- 1986-09-19 FR FR868613177A patent/FR2587837B1/fr not_active Expired
- 1986-09-19 JP JP61221752A patent/JPS6269555A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE3631425A1 (de) | 1987-04-02 |
GB2180688A (en) | 1987-04-01 |
FR2587837A1 (fr) | 1987-03-27 |
JPS6269555A (ja) | 1987-03-30 |
US4755487A (en) | 1988-07-05 |
GB2180688B (en) | 1989-09-13 |
GB8523369D0 (en) | 1985-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ER | Errata listed in the french official journal (bopi) |
Free format text: 13/87 |
|
ST | Notification of lapse |