FR2548452B1 - Dispositif a couche mince, notamment transistor - Google Patents
Dispositif a couche mince, notamment transistorInfo
- Publication number
- FR2548452B1 FR2548452B1 FR8409381A FR8409381A FR2548452B1 FR 2548452 B1 FR2548452 B1 FR 2548452B1 FR 8409381 A FR8409381 A FR 8409381A FR 8409381 A FR8409381 A FR 8409381A FR 2548452 B1 FR2548452 B1 FR 2548452B1
- Authority
- FR
- France
- Prior art keywords
- thin film
- film device
- especially transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58106798A JPS59232456A (ja) | 1983-06-16 | 1983-06-16 | 薄膜回路素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2548452A1 FR2548452A1 (fr) | 1985-01-04 |
FR2548452B1 true FR2548452B1 (fr) | 1986-05-30 |
Family
ID=14442895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8409381A Expired FR2548452B1 (fr) | 1983-06-16 | 1984-06-15 | Dispositif a couche mince, notamment transistor |
Country Status (3)
Country | Link |
---|---|
US (1) | US4618873A (fr) |
JP (1) | JPS59232456A (fr) |
FR (1) | FR2548452B1 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60170254A (ja) * | 1984-02-15 | 1985-09-03 | Fuji Xerox Co Ltd | 原稿読取装置 |
US5166086A (en) * | 1985-03-29 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing same |
DE3680806D1 (de) * | 1985-03-29 | 1991-09-19 | Matsushita Electric Ind Co Ltd | Duennschicht-transistorenanordnung und methode zu deren herstellung. |
US4855806A (en) * | 1985-08-02 | 1989-08-08 | General Electric Company | Thin film transistor with aluminum contacts and nonaluminum metallization |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JPH0656883B2 (ja) * | 1986-03-03 | 1994-07-27 | 鐘淵化学工業株式会社 | 半導体装置 |
US4704783A (en) * | 1986-05-05 | 1987-11-10 | General Electric Company | Method for passivating the back channel of amorphous silicon field effect transistors |
US4803536A (en) * | 1986-10-24 | 1989-02-07 | Xerox Corporation | Electrostatic discharge protection network for large area transducer arrays |
US4774207A (en) * | 1987-04-20 | 1988-09-27 | General Electric Company | Method for producing high yield electrical contacts to N+ amorphous silicon |
FR2614726A1 (fr) * | 1987-04-30 | 1988-11-04 | Seiko Instr Inc | Resistance a couche mince et procede de fabrication |
US5210438A (en) * | 1989-05-18 | 1993-05-11 | Fujitsu Limited | Semiconductor resistance element and process for fabricating same |
JPH02303154A (ja) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2558351B2 (ja) * | 1989-06-29 | 1996-11-27 | 沖電気工業株式会社 | アクティブマトリクス表示パネル |
US5225364A (en) * | 1989-06-26 | 1993-07-06 | Oki Electric Industry Co., Ltd. | Method of fabricating a thin-film transistor matrix for an active matrix display panel |
JPH07112053B2 (ja) * | 1990-04-13 | 1995-11-29 | 富士ゼロックス株式会社 | 薄膜スイッチング素子アレイ |
KR940008883B1 (ko) * | 1992-04-08 | 1994-09-28 | 삼성전자 주식회사 | 박막저항의 제조방법 |
JP2887032B2 (ja) * | 1992-10-30 | 1999-04-26 | シャープ株式会社 | 薄膜トランジスタ回路およびその製造方法 |
US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
US5650358A (en) * | 1995-08-28 | 1997-07-22 | Ois Optical Imaging Systems, Inc. | Method of making a TFT having a reduced channel length |
JP6578676B2 (ja) * | 2015-03-03 | 2019-09-25 | セイコーエプソン株式会社 | 画像読取装置および半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4181913A (en) * | 1977-05-31 | 1980-01-01 | Xerox Corporation | Resistive electrode amorphous semiconductor negative resistance device |
US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
US4297721A (en) * | 1978-11-03 | 1981-10-27 | Mostek Corporation | Extremely low current load device for integrated circuit |
US4369372A (en) * | 1979-06-18 | 1983-01-18 | Canon Kabushiki Kaisha | Photo electro transducer device |
JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS5858753A (ja) * | 1981-10-02 | 1983-04-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
FR2515427A1 (fr) * | 1981-10-27 | 1983-04-29 | Efcis | Procede de fabrication de resistances de forte valeur pour circuits integres |
-
1983
- 1983-06-16 JP JP58106798A patent/JPS59232456A/ja active Granted
-
1984
- 1984-06-15 FR FR8409381A patent/FR2548452B1/fr not_active Expired
- 1984-06-18 US US06/621,683 patent/US4618873A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4618873A (en) | 1986-10-21 |
JPS59232456A (ja) | 1984-12-27 |
FR2548452A1 (fr) | 1985-01-04 |
JPH0454980B2 (fr) | 1992-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
ST | Notification of lapse |