FR2538170B1 - Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee - Google Patents
Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associeeInfo
- Publication number
- FR2538170B1 FR2538170B1 FR8320500A FR8320500A FR2538170B1 FR 2538170 B1 FR2538170 B1 FR 2538170B1 FR 8320500 A FR8320500 A FR 8320500A FR 8320500 A FR8320500 A FR 8320500A FR 2538170 B1 FR2538170 B1 FR 2538170B1
- Authority
- FR
- France
- Prior art keywords
- alternating current
- relay circuit
- current relay
- thyristor structure
- associated thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/451,792 US4535251A (en) | 1982-12-21 | 1982-12-21 | A.C. Solid state relay circuit and structure |
| US55502583A | 1983-11-25 | 1983-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2538170A1 FR2538170A1 (fr) | 1984-06-22 |
| FR2538170B1 true FR2538170B1 (fr) | 1988-05-27 |
Family
ID=27036523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8320500A Expired FR2538170B1 (fr) | 1982-12-21 | 1983-12-21 | Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee |
Country Status (12)
| Country | Link |
|---|---|
| KR (1) | KR900004197B1 (OSRAM) |
| BR (1) | BR8307043A (OSRAM) |
| CA (1) | CA1237170A (OSRAM) |
| CH (1) | CH664861A5 (OSRAM) |
| DE (1) | DE3345449A1 (OSRAM) |
| FR (1) | FR2538170B1 (OSRAM) |
| GB (2) | GB2133641B (OSRAM) |
| IL (1) | IL70462A (OSRAM) |
| IT (1) | IT1194526B (OSRAM) |
| MX (2) | MX155562A (OSRAM) |
| NL (1) | NL8304376A (OSRAM) |
| SE (1) | SE8306952L (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590750B1 (fr) * | 1985-11-22 | 1991-05-10 | Telemecanique Electrique | Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif |
| GB2234642A (en) * | 1989-07-19 | 1991-02-06 | Philips Nv | Protection for a switched bridge circuit |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| GB2254730B (en) * | 1991-04-08 | 1994-09-21 | Champion Spark Plug Europ | High current photosensitive electronic switch |
| JP3495847B2 (ja) * | 1995-09-11 | 2004-02-09 | シャープ株式会社 | サイリスタを備える半導体集積回路 |
| US6518604B1 (en) | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
| EP3249815B1 (en) * | 2016-05-23 | 2019-08-28 | NXP USA, Inc. | Circuit arrangement for fast turn-off of bi-directional switching device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416839B2 (OSRAM) * | 1973-03-06 | 1979-06-25 | ||
| US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| DE2932969A1 (de) * | 1979-04-20 | 1980-10-30 | Ske | Halbleiter-relaiskreis und verfahren zu seiner herstellung |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
| DE3019907A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer zweirichtungsthyristor |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| US4361798A (en) * | 1980-10-27 | 1982-11-30 | Pitney Bowes Inc. | System for extending the voltage range of a phase-fired triac controller |
-
1983
- 1983-12-15 SE SE8306952A patent/SE8306952L/xx not_active Application Discontinuation
- 1983-12-15 DE DE19833345449 patent/DE3345449A1/de active Granted
- 1983-12-15 IL IL70462A patent/IL70462A/xx unknown
- 1983-12-20 KR KR1019830006040A patent/KR900004197B1/ko not_active Expired
- 1983-12-20 CA CA000443824A patent/CA1237170A/en not_active Expired
- 1983-12-20 CH CH6781/83A patent/CH664861A5/de not_active IP Right Cessation
- 1983-12-20 IT IT24285/83A patent/IT1194526B/it active
- 1983-12-20 NL NL8304376A patent/NL8304376A/xx not_active Application Discontinuation
- 1983-12-21 BR BR8307043A patent/BR8307043A/pt unknown
- 1983-12-21 FR FR8320500A patent/FR2538170B1/fr not_active Expired
- 1983-12-21 GB GB08333998A patent/GB2133641B/en not_active Expired
- 1983-12-21 MX MX199861A patent/MX155562A/es unknown
- 1983-12-21 MX MX4482A patent/MX160049A/es unknown
-
1986
- 1986-02-20 GB GB08604263A patent/GB2174242B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2133641B (en) | 1986-10-22 |
| KR840007203A (ko) | 1984-12-05 |
| SE8306952L (sv) | 1984-06-22 |
| IL70462A (en) | 1987-09-16 |
| GB8333998D0 (en) | 1984-02-01 |
| IL70462A0 (en) | 1984-03-30 |
| FR2538170A1 (fr) | 1984-06-22 |
| SE8306952D0 (sv) | 1983-12-15 |
| IT8324285A1 (it) | 1985-06-20 |
| IT8324285A0 (it) | 1983-12-20 |
| CH664861A5 (de) | 1988-03-31 |
| MX155562A (es) | 1988-03-25 |
| CA1237170A (en) | 1988-05-24 |
| GB8604263D0 (en) | 1986-03-26 |
| NL8304376A (nl) | 1984-07-16 |
| DE3345449A1 (de) | 1984-07-12 |
| IT1194526B (it) | 1988-09-22 |
| GB2174242A (en) | 1986-10-29 |
| BR8307043A (pt) | 1984-07-31 |
| KR900004197B1 (ko) | 1990-06-18 |
| GB2133641A (en) | 1984-07-25 |
| DE3345449C2 (OSRAM) | 1989-08-17 |
| MX160049A (es) | 1989-11-13 |
| GB2174242B (en) | 1987-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |