FR2532117A1 - Photodetecteur - Google Patents
Photodetecteur Download PDFInfo
- Publication number
- FR2532117A1 FR2532117A1 FR8312888A FR8312888A FR2532117A1 FR 2532117 A1 FR2532117 A1 FR 2532117A1 FR 8312888 A FR8312888 A FR 8312888A FR 8312888 A FR8312888 A FR 8312888A FR 2532117 A1 FR2532117 A1 FR 2532117A1
- Authority
- FR
- France
- Prior art keywords
- layer
- photoconductive layer
- concentration
- amorphous silicon
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000737 periodic effect Effects 0.000 claims abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 53
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 34
- 229910052796 boron Inorganic materials 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 101001010600 Homo sapiens Interleukin-12 subunit alpha Proteins 0.000 claims 1
- 101000852992 Homo sapiens Interleukin-12 subunit beta Proteins 0.000 claims 1
- 102100030698 Interleukin-12 subunit alpha Human genes 0.000 claims 1
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- 239000001257 hydrogen Substances 0.000 abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 119
- 238000000034 method Methods 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002688 persistence Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D65/00—Making tools for sawing machines or sawing devices for use in cutting any kind of material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57144647A JPS5934675A (ja) | 1982-08-23 | 1982-08-23 | 受光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2532117A1 true FR2532117A1 (fr) | 1984-02-24 |
| FR2532117B1 FR2532117B1 (OSRAM) | 1985-04-12 |
Family
ID=15366932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8312888A Granted FR2532117A1 (fr) | 1982-08-23 | 1983-08-04 | Photodetecteur |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4626885A (OSRAM) |
| JP (1) | JPS5934675A (OSRAM) |
| KR (1) | KR880000140B1 (OSRAM) |
| FR (1) | FR2532117A1 (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61222277A (ja) * | 1985-03-28 | 1986-10-02 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
| US5304815A (en) * | 1986-09-11 | 1994-04-19 | Canon Kabushiki Kaisha | Electron emission elements |
| US4851367A (en) * | 1988-08-17 | 1989-07-25 | Eastman Kodak Company | Method of making primary current detector using plasma enhanced chemical vapor deposition |
| BE1008070A3 (nl) * | 1994-02-09 | 1996-01-09 | Philips Electronics Nv | Beeldversterkerbuis. |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0005543A1 (en) * | 1978-05-19 | 1979-11-28 | Hitachi, Ltd. | Photosensor |
| FR2441264A1 (fr) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | Ecran sensible aux radiations |
| FR2487535A1 (OSRAM) * | 1977-12-22 | 1982-01-29 | Canon Kk | |
| FR2497604A1 (fr) * | 1981-01-08 | 1982-07-09 | Canon Kk | Element photoconducteur |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4086102A (en) * | 1976-12-13 | 1978-04-25 | King William J | Inexpensive solar cell and method therefor |
| NL7805417A (nl) * | 1978-05-19 | 1979-11-21 | Philips Nv | Opneembuis. |
| NL7902838A (nl) * | 1979-04-11 | 1980-10-14 | Philips Nv | Opneembuis. |
| JPS5832454B2 (ja) * | 1979-06-07 | 1983-07-13 | 日本放送協会 | 光導電性タ−ゲツト |
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| US4536459A (en) * | 1982-03-12 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member having multiple amorphous layers |
| US4517269A (en) * | 1982-04-27 | 1985-05-14 | Canon Kabushiki Kaisha | Photoconductive member |
| JPS58194231A (ja) * | 1982-05-10 | 1983-11-12 | Hitachi Ltd | 撮像管 |
| JPS5996639A (ja) * | 1982-11-26 | 1984-06-04 | Hitachi Ltd | 撮像管 |
-
1982
- 1982-08-23 JP JP57144647A patent/JPS5934675A/ja active Pending
-
1983
- 1983-07-29 US US06/518,658 patent/US4626885A/en not_active Expired - Fee Related
- 1983-08-04 FR FR8312888A patent/FR2532117A1/fr active Granted
- 1983-08-20 KR KR1019830003896A patent/KR880000140B1/ko not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2487535A1 (OSRAM) * | 1977-12-22 | 1982-01-29 | Canon Kk | |
| EP0005543A1 (en) * | 1978-05-19 | 1979-11-28 | Hitachi, Ltd. | Photosensor |
| FR2441264A1 (fr) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | Ecran sensible aux radiations |
| FR2497604A1 (fr) * | 1981-01-08 | 1982-07-09 | Canon Kk | Element photoconducteur |
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 19, supplément 19-1, 1980, Tokyo Y. IMAMURA et al. "Amorphous silicon image pickup devices", pages 573-577 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR880000140B1 (ko) | 1988-03-12 |
| FR2532117B1 (OSRAM) | 1985-04-12 |
| KR840006101A (ko) | 1984-11-21 |
| US4626885A (en) | 1986-12-02 |
| JPS5934675A (ja) | 1984-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |