KR880000140B1 - 수광소자 - Google Patents

수광소자 Download PDF

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Publication number
KR880000140B1
KR880000140B1 KR1019830003896A KR830003896A KR880000140B1 KR 880000140 B1 KR880000140 B1 KR 880000140B1 KR 1019830003896 A KR1019830003896 A KR 1019830003896A KR 830003896 A KR830003896 A KR 830003896A KR 880000140 B1 KR880000140 B1 KR 880000140B1
Authority
KR
South Korea
Prior art keywords
light
conductive film
layer
ppm
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830003896A
Other languages
English (en)
Korean (ko)
Other versions
KR840006101A (ko
Inventor
사찌오 이시오까
요시노리 이마무라
쯔요시 우다
유끼오 다까사끼
쥬우시로오 구사노
히로후미 오가와
다쯔오 마끼시마
타다아끼 히라이
Original Assignee
가부시기가이샤 히다찌세이사구쇼
미따 가쯔시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사구쇼, 미따 가쯔시게 filed Critical 가부시기가이샤 히다찌세이사구쇼
Publication of KR840006101A publication Critical patent/KR840006101A/ko
Application granted granted Critical
Publication of KR880000140B1 publication Critical patent/KR880000140B1/ko
Expired legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D65/00—Making tools for sawing machines or sawing devices for use in cutting any kind of material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
KR1019830003896A 1982-08-23 1983-08-20 수광소자 Expired KR880000140B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57144647A JPS5934675A (ja) 1982-08-23 1982-08-23 受光素子
JP144647 1982-08-23
JP57-144647 1982-08-23

Publications (2)

Publication Number Publication Date
KR840006101A KR840006101A (ko) 1984-11-21
KR880000140B1 true KR880000140B1 (ko) 1988-03-12

Family

ID=15366932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830003896A Expired KR880000140B1 (ko) 1982-08-23 1983-08-20 수광소자

Country Status (4)

Country Link
US (1) US4626885A (OSRAM)
JP (1) JPS5934675A (OSRAM)
KR (1) KR880000140B1 (OSRAM)
FR (1) FR2532117A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222277A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
US5304815A (en) * 1986-09-11 1994-04-19 Canon Kabushiki Kaisha Electron emission elements
US4851367A (en) * 1988-08-17 1989-07-25 Eastman Kodak Company Method of making primary current detector using plasma enhanced chemical vapor deposition
BE1008070A3 (nl) * 1994-02-09 1996-01-09 Philips Electronics Nv Beeldversterkerbuis.

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
NL7805417A (nl) * 1978-05-19 1979-11-21 Philips Nv Opneembuis.
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
FR2441264A1 (fr) * 1978-11-08 1980-06-06 Hitachi Ltd Ecran sensible aux radiations
NL7902838A (nl) * 1979-04-11 1980-10-14 Philips Nv Opneembuis.
JPS5832454B2 (ja) * 1979-06-07 1983-07-13 日本放送協会 光導電性タ−ゲツト
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US4536459A (en) * 1982-03-12 1985-08-20 Canon Kabushiki Kaisha Photoconductive member having multiple amorphous layers
US4517269A (en) * 1982-04-27 1985-05-14 Canon Kabushiki Kaisha Photoconductive member
JPS58194231A (ja) * 1982-05-10 1983-11-12 Hitachi Ltd 撮像管
JPS5996639A (ja) * 1982-11-26 1984-06-04 Hitachi Ltd 撮像管

Also Published As

Publication number Publication date
FR2532117A1 (fr) 1984-02-24
FR2532117B1 (OSRAM) 1985-04-12
KR840006101A (ko) 1984-11-21
US4626885A (en) 1986-12-02
JPS5934675A (ja) 1984-02-25

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