FR2529715A1 - Procede d'optimisation du dopage dans un transistor mos - Google Patents

Procede d'optimisation du dopage dans un transistor mos Download PDF

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Publication number
FR2529715A1
FR2529715A1 FR8211571A FR8211571A FR2529715A1 FR 2529715 A1 FR2529715 A1 FR 2529715A1 FR 8211571 A FR8211571 A FR 8211571A FR 8211571 A FR8211571 A FR 8211571A FR 2529715 A1 FR2529715 A1 FR 2529715A1
Authority
FR
France
Prior art keywords
ions
type
substrate
doping
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8211571A
Other languages
English (en)
French (fr)
Other versions
FR2529715B1 (cg-RX-API-DMAC10.html
Inventor
Pierre Jeuch
Thierry Bonnet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8211571A priority Critical patent/FR2529715A1/fr
Priority to EP83401331A priority patent/EP0099787A1/fr
Priority to JP58118387A priority patent/JPS5921068A/ja
Publication of FR2529715A1 publication Critical patent/FR2529715A1/fr
Application granted granted Critical
Publication of FR2529715B1 publication Critical patent/FR2529715B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P30/21—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H10P30/204—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
FR8211571A 1982-07-01 1982-07-01 Procede d'optimisation du dopage dans un transistor mos Granted FR2529715A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8211571A FR2529715A1 (fr) 1982-07-01 1982-07-01 Procede d'optimisation du dopage dans un transistor mos
EP83401331A EP0099787A1 (fr) 1982-07-01 1983-06-28 Procédé d'optimisation du dopage dans un transistor MOS
JP58118387A JPS5921068A (ja) 1982-07-01 1983-07-01 Ｍｏｓトランジスタにおけるド−ピング最適化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8211571A FR2529715A1 (fr) 1982-07-01 1982-07-01 Procede d'optimisation du dopage dans un transistor mos

Publications (2)

Publication Number Publication Date
FR2529715A1 true FR2529715A1 (fr) 1984-01-06
FR2529715B1 FR2529715B1 (cg-RX-API-DMAC10.html) 1984-12-21

Family

ID=9275586

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8211571A Granted FR2529715A1 (fr) 1982-07-01 1982-07-01 Procede d'optimisation du dopage dans un transistor mos

Country Status (3)

Country Link
EP (1) EP0099787A1 (cg-RX-API-DMAC10.html)
JP (1) JPS5921068A (cg-RX-API-DMAC10.html)
FR (1) FR2529715A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0255882A3 (de) * 1986-08-07 1990-05-30 Siemens Aktiengesellschaft npn-Bipolartransistor mit extrem flachen Emitter/Basis-Strukturen und Verfahren zu seiner Herstellung
US4889819A (en) * 1988-05-20 1989-12-26 International Business Machines Corporation Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate
EP0359530A3 (en) * 1988-09-15 1991-01-02 Advanced Micro Devices, Inc. Capacitive reduction of junctions in a semiconductor device
DE69027312T2 (de) * 1989-03-02 1997-01-30 Thunderbird Tech Inc Feldeffekttransistor mit fermi-schwellenspannung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2337428A1 (fr) * 1975-12-31 1977-07-29 Ibm Transistor a effet de champ a canal composite et procede de fabrication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2337428A1 (fr) * 1975-12-31 1977-07-29 Ibm Transistor a effet de champ a canal composite et procede de fabrication

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, volume 35, no. 8, octobre 1979 (NEW YORK, US) M. KOYANAGI et al. "Short-channel MOS FET's fabricated by self-aligned ion implantation and laser-annealing", pages 621-623 *
IBM TECHNICAL DISCLOSURE BULLETIN, volume 17, no. 4, septembre 1974 (NEW YORK; US) D.R. YOUNG "Metal-oxide semiconductor field-effect transistor structure", pages 1208-1209 *
IEEE ELECTRON DEVICES, volume ED-27, no. 8, août 1980 (NEW YORK, US) R.F. MOTTA et al. "Computer-aided device optimization for MOS/VLSI", pages 1559-1565 *
IEEE JOURNAL OF SOLID-STATE CIRCUITS, volume SC-14, no. 3, juin 1979 (NEW YORK; US) J. PEREIRA DE SOUZA et al. "A simplified self-aligned al-gate MOS technology for high performance depletion-logic circuits", pages 651-653 *

Also Published As

Publication number Publication date
FR2529715B1 (cg-RX-API-DMAC10.html) 1984-12-21
JPS5921068A (ja) 1984-02-02
EP0099787A1 (fr) 1984-02-01

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