FR2514563A1 - Dispositif semi-conducteur comportant une region de type p constitue d'un semi-conducteur compose des groupes ii-vi - Google Patents

Dispositif semi-conducteur comportant une region de type p constitue d'un semi-conducteur compose des groupes ii-vi Download PDF

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Publication number
FR2514563A1
FR2514563A1 FR8216929A FR8216929A FR2514563A1 FR 2514563 A1 FR2514563 A1 FR 2514563A1 FR 8216929 A FR8216929 A FR 8216929A FR 8216929 A FR8216929 A FR 8216929A FR 2514563 A1 FR2514563 A1 FR 2514563A1
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FR
France
Prior art keywords
group
crystal
semiconductor device
semiconductor
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8216929A
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English (en)
French (fr)
Other versions
FR2514563B1 (cg-RX-API-DMAC10.html
Inventor
Jun-Ichi Nishizawa
Nishizawa Jun-Ichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zh Handotai Kenkyu Shi
Zh Handotai Kenkyu
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zh Handotai Kenkyu Shi
Zh Handotai Kenkyu
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zh Handotai Kenkyu Shi, Zh Handotai Kenkyu, Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zh Handotai Kenkyu Shi
Publication of FR2514563A1 publication Critical patent/FR2514563A1/fr
Application granted granted Critical
Publication of FR2514563B1 publication Critical patent/FR2514563B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10P14/263—
    • H10P14/265—
    • H10P14/2916—
    • H10P14/3424—
    • H10P14/3431—
    • H10P14/3444—
    • H10P14/3446—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8216929A 1981-10-09 1982-10-08 Dispositif semi-conducteur comportant une region de type p constitue d'un semi-conducteur compose des groupes ii-vi Granted FR2514563A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161837A JPS5863183A (ja) 1981-10-09 1981-10-09 ２−６族間化合物の結晶成長法

Publications (2)

Publication Number Publication Date
FR2514563A1 true FR2514563A1 (fr) 1983-04-15
FR2514563B1 FR2514563B1 (cg-RX-API-DMAC10.html) 1985-01-04

Family

ID=15742870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8216929A Granted FR2514563A1 (fr) 1981-10-09 1982-10-08 Dispositif semi-conducteur comportant une region de type p constitue d'un semi-conducteur compose des groupes ii-vi

Country Status (5)

Country Link
US (1) US4783426A (cg-RX-API-DMAC10.html)
JP (1) JPS5863183A (cg-RX-API-DMAC10.html)
DE (1) DE3237536C2 (cg-RX-API-DMAC10.html)
FR (1) FR2514563A1 (cg-RX-API-DMAC10.html)
GB (1) GB2107518B (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
JPS598383A (ja) * 1982-07-06 1984-01-17 Semiconductor Res Found ＺｎＳｅ緑色発光ダイオ−ド
JPS6050759B2 (ja) * 1982-07-14 1985-11-09 財団法人 半導体研究振興会 ＺｎＳｅのエピタキシヤル成長法及び成長装置
JP2723227B2 (ja) * 1986-09-26 1998-03-09 株式会社東芝 半導体発光素子の製造方法
US4960721A (en) * 1987-11-10 1990-10-02 Kabushiki Kaisha Toshiba Method for purifying group II-IV compound semiconductors
US5169799A (en) * 1988-03-16 1992-12-08 Sumitomo Electric Industries, Ltd. Method for forming a doped ZnSe single crystal
US5252499A (en) * 1988-08-15 1993-10-12 Rothschild G F Neumark Wide band-gap semiconductors having low bipolar resistivity and method of formation
US4904618A (en) * 1988-08-22 1990-02-27 Neumark Gertrude F Process for doping crystals of wide band gap semiconductors
CA2109310C (en) * 1991-05-15 2001-10-02 Michael A. Haase Blue-green laser diode
US5213998A (en) * 1991-05-15 1993-05-25 Minnesota Mining And Manufacturing Company Method for making an ohmic contact for p-type group II-VI compound semiconductors
US5488234A (en) * 1993-03-18 1996-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor element having bivalent and VI group element and an insulating layer
CN102677176A (zh) * 2008-09-01 2012-09-19 西北工业大学 一种用于硒化锌单晶体生长的安瓿
US20110094557A1 (en) * 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025995B (de) * 1954-04-01 1958-03-13 Philips Nv Verfahren zur Herstellung von Halbleiterkoerpern mit aneinandergrenzenden Zonen verschiedener Leitfaehigkeit
GB2078697A (en) * 1980-06-11 1982-01-13 Nishizawa Junichi Method of producing a group ii-vi semiconductor crystal compound
GB2081010A (en) * 1980-06-12 1982-02-10 Nishizawa Junichi Semiconductor device with a pn junction and its method of manufacture

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3447234A (en) * 1964-10-12 1969-06-03 Singer General Precision Photoconductive thin film cell responding to a broad spectral range of light input
US3483028A (en) * 1965-05-17 1969-12-09 Bell & Howell Co Preparation of light sensitive device of enhanced photoconductive sensitivity
US3732471A (en) * 1969-11-10 1973-05-08 Corning Glass Works Method of obtaining type conversion in zinc telluride and resultant p-n junction devices
US3743553A (en) * 1971-06-18 1973-07-03 Honeywell Inc Pn junctions in mercury cadmium telluride
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
US4143235A (en) * 1977-12-30 1979-03-06 Chevron Research Company Cadmium sulfide photovoltaic cell and method of fabrication
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
CA1165851A (en) * 1980-06-16 1984-04-17 Subhash Mahajan Epitaxial devices having reduced dislocation count
US4422888A (en) * 1981-02-27 1983-12-27 Xerox Corporation Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
JPS58156598A (ja) * 1982-03-09 1983-09-17 Semiconductor Res Found 結晶成長法
JPS598383A (ja) * 1982-07-06 1984-01-17 Semiconductor Res Found ＺｎＳｅ緑色発光ダイオ−ド
JPS6050759B2 (ja) * 1982-07-14 1985-11-09 財団法人 半導体研究振興会 ＺｎＳｅのエピタキシヤル成長法及び成長装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025995B (de) * 1954-04-01 1958-03-13 Philips Nv Verfahren zur Herstellung von Halbleiterkoerpern mit aneinandergrenzenden Zonen verschiedener Leitfaehigkeit
GB2078697A (en) * 1980-06-11 1982-01-13 Nishizawa Junichi Method of producing a group ii-vi semiconductor crystal compound
GB2081010A (en) * 1980-06-12 1982-02-10 Nishizawa Junichi Semiconductor device with a pn junction and its method of manufacture

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 18, no. 2, 15 janvier 1971, pages 45-46, New York, USA *
DISPLAYS, vol. 2, no. 5, avril 1981, pages 251-258, Guildford, Surrey, G.B. *
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 10, no. 4, avril 1971, pages 516-518, Tokyo, JP. *
JOURNAL OF CRYSTAL GROWTH, vol. 45, no. 1, décembre 1978, pages 281-286, Amsterdam, NL. *

Also Published As

Publication number Publication date
DE3237536C2 (de) 1986-11-20
JPS6230693B2 (cg-RX-API-DMAC10.html) 1987-07-03
FR2514563B1 (cg-RX-API-DMAC10.html) 1985-01-04
DE3237536A1 (de) 1983-04-28
GB2107518A (en) 1983-04-27
JPS5863183A (ja) 1983-04-14
GB2107518B (en) 1985-09-18
US4783426A (en) 1988-11-08

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