FR2507014A1 - Dispositif emetteur de lumiere a semiconducteur du type laser - Google Patents

Dispositif emetteur de lumiere a semiconducteur du type laser

Info

Publication number
FR2507014A1
FR2507014A1 FR8208938A FR8208938A FR2507014A1 FR 2507014 A1 FR2507014 A1 FR 2507014A1 FR 8208938 A FR8208938 A FR 8208938A FR 8208938 A FR8208938 A FR 8208938A FR 2507014 A1 FR2507014 A1 FR 2507014A1
Authority
FR
France
Prior art keywords
semiconductor light
light emitting
emitting device
type semiconductor
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8208938A
Other languages
English (en)
Other versions
FR2507014B1 (fr
Inventor
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2507014A1 publication Critical patent/FR2507014A1/fr
Application granted granted Critical
Publication of FR2507014B1 publication Critical patent/FR2507014B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'INVENTION CONCERNE LES SOURCES DE LUMIERE A SEMICONDUCTEURS. UN LASER A DOUBLE HETEROSTRUCTURE ET A DOUBLE BARRIERE EST CARACTERISE PAR LA PRESENCE DE COUCHES DE BARRIERE 7, 11 ENTRE LA COUCHE ACTIVE 9 ET LES COUCHES DE GAINE 5, 13. LES COUCHES DE BARRIERE ONT UNE BANDE INTERDITE PLUS LARGE QUE LES BANDES INTERDITES DES COUCHES ACTIVE ET DE GAINE. CE LASER PRESENTE UNE DIVERGENCE DE FAISCEAU RELATIVEMENT FAIBLE ET IL EST CAPABLE DE FONCTIONNER A TEMPERATURE ELEVEE. APPLICATION AUX TELECOMMUNICATIONS OPTIQUES.
FR8208938A 1981-05-29 1982-05-24 Dispositif emetteur de lumiere a semiconducteur du type laser Expired FR2507014B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/268,237 US4438446A (en) 1981-05-29 1981-05-29 Double barrier double heterostructure laser

Publications (2)

Publication Number Publication Date
FR2507014A1 true FR2507014A1 (fr) 1982-12-03
FR2507014B1 FR2507014B1 (fr) 1985-12-13

Family

ID=23022074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8208938A Expired FR2507014B1 (fr) 1981-05-29 1982-05-24 Dispositif emetteur de lumiere a semiconducteur du type laser

Country Status (7)

Country Link
US (1) US4438446A (fr)
JP (1) JPS57199290A (fr)
CA (1) CA1182890A (fr)
DE (1) DE3220214A1 (fr)
FR (1) FR2507014B1 (fr)
GB (1) GB2099624B (fr)
NL (1) NL8202197A (fr)

Families Citing this family (35)

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Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
FR2538171B1 (fr) * 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
GB2156511A (en) * 1984-03-23 1985-10-09 Philips Electronic Associated Optical absorption spectroscopy for semiconductors
JPS60260181A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体発光装置
GB2164791A (en) * 1984-09-22 1986-03-26 Stc Plc Semiconductor lasers
US4639999A (en) * 1984-11-02 1987-02-03 Xerox Corporation High resolution, high efficiency I.R. LED printing array fabrication method
JPH0712100B2 (ja) * 1985-03-25 1995-02-08 株式会社日立製作所 半導体発光素子
US4634928A (en) * 1985-04-19 1987-01-06 Trw Inc. Superluminescent light-emitting diode and related method
JPS61256319A (ja) * 1985-05-10 1986-11-13 Hitachi Ltd 光変調器
JPS61291491A (ja) * 1985-06-19 1986-12-22 Mitsubishi Monsanto Chem Co りん化ひ化ガリウム混晶エピタキシヤルウエハ
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS6288389A (ja) * 1985-10-15 1987-04-22 Toshiba Corp 半導体発光素子
JPS62137893A (ja) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp 半導体レ−ザ
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
JPH0746745B2 (ja) * 1986-06-17 1995-05-17 松下電器産業株式会社 半導体レ−ザ装置
US4760579A (en) * 1986-07-01 1988-07-26 Hughes Aircraft Company Quantum well laser with charge carrier density enhancement
JPS6395682A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp 端面発光素子
EP0273344B1 (fr) * 1986-12-22 1992-10-14 Nec Corporation PNPN-Thyristor
US4956682A (en) * 1987-04-28 1990-09-11 Matsushita Electric Industrial Co., Ltd. Optoelectronic integrated circuit
US4947223A (en) * 1987-08-31 1990-08-07 The United States Of America As Represented By The United States Department Of Energy Semiconductor devices incorporating multilayer interference regions
JPH01241192A (ja) * 1988-03-23 1989-09-26 Fujitsu Ltd 半導体装置
JPH0212885A (ja) * 1988-06-29 1990-01-17 Nec Corp 半導体レーザ及びその出射ビームの垂直放射角の制御方法
DE4031290C2 (de) * 1990-10-04 1994-09-08 Telefunken Microelectron Halbleiteranordnung, insbesondere Infrarotdiode und Verfahren zum Herstellen
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
EP0540799A1 (fr) * 1991-11-04 1993-05-12 International Business Machines Corporation Amélioration de diodes AlGaInP à émission de lumière visible
EP0575684A1 (fr) * 1992-06-22 1993-12-29 International Business Machines Corporation Diode laser avec un confinement optique et électronique découplé
JPH07235733A (ja) * 1993-12-27 1995-09-05 Sanyo Electric Co Ltd 半導体レーザ素子
US5448585A (en) * 1994-06-29 1995-09-05 At&T Ipm Corp. Article comprising a quantum well laser
JPH0964452A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
GB2308732A (en) * 1995-12-29 1997-07-02 Sharp Kk A semiconductor laser device
US6466597B1 (en) * 1998-06-17 2002-10-15 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
WO2001052374A1 (fr) * 2000-01-07 2001-07-19 Lucent Technologies, Inc. Dispositif electronique a region d'arret comportant de l'aluminium et procede de fabrication correspondant

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246095A1 (fr) * 1973-08-21 1975-04-25 Int Standard Electric Corp
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
US4328469A (en) * 1979-01-15 1982-05-04 Xerox Corporation High output power injection lasers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542079A (en) * 1977-06-07 1979-01-09 Nippon Telegr & Teleph Corp <Ntt> Light emission unit of semiconductor
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246095A1 (fr) * 1973-08-21 1975-04-25 Int Standard Electric Corp
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
US4328469A (en) * 1979-01-15 1982-05-04 Xerox Corporation High output power injection lasers

Also Published As

Publication number Publication date
US4438446A (en) 1984-03-20
DE3220214A1 (de) 1983-02-17
GB2099624A (en) 1982-12-08
NL8202197A (nl) 1982-12-16
JPS57199290A (en) 1982-12-07
FR2507014B1 (fr) 1985-12-13
GB2099624B (en) 1984-12-19
CA1182890A (fr) 1985-02-19

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Legal Events

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ST Notification of lapse