FR2506058B1 - - Google Patents

Info

Publication number
FR2506058B1
FR2506058B1 FR8207966A FR8207966A FR2506058B1 FR 2506058 B1 FR2506058 B1 FR 2506058B1 FR 8207966 A FR8207966 A FR 8207966A FR 8207966 A FR8207966 A FR 8207966A FR 2506058 B1 FR2506058 B1 FR 2506058B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8207966A
Other languages
French (fr)
Other versions
FR2506058A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2506058A1 publication Critical patent/FR2506058A1/fr
Application granted granted Critical
Publication of FR2506058B1 publication Critical patent/FR2506058B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR8207966A 1981-05-13 1982-05-07 Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif Granted FR2506058A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (2)

Publication Number Publication Date
FR2506058A1 FR2506058A1 (fr) 1982-11-19
FR2506058B1 true FR2506058B1 (ja) 1985-04-12

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207966A Granted FR2506058A1 (fr) 1981-05-13 1982-05-07 Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif

Country Status (6)

Country Link
JP (1) JPS57186354A (ja)
KR (1) KR840000082A (ja)
DE (1) DE3217896A1 (ja)
FR (1) FR2506058A1 (ja)
GB (1) GB2098397A (ja)
IT (1) IT1152129B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
JPS58181319A (ja) * 1982-04-19 1983-10-24 Hitachi Ltd タイミング発生回路
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体記憶装置
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten
DE2646245A1 (de) * 1975-10-28 1977-05-05 Motorola Inc Speicherschaltung
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
IT8221211A0 (it) 1982-05-12
KR840000082A (ko) 1984-01-30
IT1152129B (it) 1986-12-31
GB2098397A (en) 1982-11-17
JPS57186354A (en) 1982-11-16
DE3217896A1 (de) 1983-05-26
FR2506058A1 (fr) 1982-11-19

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Legal Events

Date Code Title Description
ST Notification of lapse