FR2485812A1 - Dispositif a semi-conducteurs et procede de fabrication de ce dispositif - Google Patents

Dispositif a semi-conducteurs et procede de fabrication de ce dispositif Download PDF

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Publication number
FR2485812A1
FR2485812A1 FR8112291A FR8112291A FR2485812A1 FR 2485812 A1 FR2485812 A1 FR 2485812A1 FR 8112291 A FR8112291 A FR 8112291A FR 8112291 A FR8112291 A FR 8112291A FR 2485812 A1 FR2485812 A1 FR 2485812A1
Authority
FR
France
Prior art keywords
layer
semiconductor
type
conductivity
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8112291A
Other languages
English (en)
French (fr)
Other versions
FR2485812B1 (enExample
Inventor
Hideki Hayashi
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of FR2485812A1 publication Critical patent/FR2485812A1/fr
Application granted granted Critical
Publication of FR2485812B1 publication Critical patent/FR2485812B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
FR8112291A 1980-06-24 1981-06-23 Dispositif a semi-conducteurs et procede de fabrication de ce dispositif Granted FR2485812A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8552380A JPS5710992A (en) 1980-06-24 1980-06-24 Semiconductor device and manufacture therefor

Publications (2)

Publication Number Publication Date
FR2485812A1 true FR2485812A1 (fr) 1981-12-31
FR2485812B1 FR2485812B1 (enExample) 1985-02-08

Family

ID=13861258

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8112291A Granted FR2485812A1 (fr) 1980-06-24 1981-06-23 Dispositif a semi-conducteurs et procede de fabrication de ce dispositif

Country Status (5)

Country Link
US (2) US4521888A (enExample)
JP (1) JPS5710992A (enExample)
DE (1) DE3124633C2 (enExample)
FR (1) FR2485812A1 (enExample)
GB (1) GB2079048B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
JPS589388A (ja) * 1981-07-09 1983-01-19 Olympus Optical Co Ltd 光変調集積素子
JPS59987A (ja) * 1982-06-26 1984-01-06 Semiconductor Res Found 半導体レ−ザ
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
CH658115A5 (fr) * 1984-05-15 1986-10-15 Youri Agabekov Luminaire de forme allongee.
JPS61251185A (ja) * 1985-04-30 1986-11-08 Mitsubishi Electric Corp 半導体レ−ザと変調用電気素子の複合素子
JPS6215871A (ja) * 1985-07-15 1987-01-24 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS6373688A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体発光装置
DE3788841T2 (de) * 1986-10-07 1994-05-05 Sharp Kk Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
US4701995A (en) * 1986-10-29 1987-10-27 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making a nonplanar buried-heterostructure distributed-feedback laser
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
JPS63177495A (ja) * 1987-01-16 1988-07-21 Sharp Corp 半導体レ−ザ素子
JPH01209776A (ja) * 1987-02-20 1989-08-23 Siemens Ag レーザ送信器装置
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPH01220492A (ja) * 1988-02-26 1989-09-04 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US4987576A (en) * 1988-11-30 1991-01-22 Siemens Aktiengesellschaft Electrically tunable semiconductor laser with ridge waveguide
US5102812A (en) * 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure
US5045680A (en) * 1990-01-18 1991-09-03 International Business Machines Corporation Integrated circuit optoelectronic toggle F/F
US5283447A (en) * 1992-01-21 1994-02-01 Bandgap Technology Corporation Integration of transistors with vertical cavity surface emitting lasers
JP4441014B2 (ja) * 1999-07-26 2010-03-31 富士ゼロックス株式会社 無線通信用光電変換素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235228A1 (de) * 1971-07-30 1973-02-22 Nippon Electric Co Stimulierbarer halbleiter (laser)
FR2285723A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Ensemble monolithique diode photoemettrice/modulateur
US3962714A (en) * 1974-09-19 1976-06-08 Northern Electric Company Limited Semiconductor optical modulator

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3768037A (en) * 1965-11-26 1973-10-23 Hitachi Ltd Semiconductor diode laser device
US3892608A (en) * 1974-02-28 1975-07-01 Motorola Inc Method for filling grooves and moats used on semiconductor devices
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
US4217561A (en) * 1978-06-26 1980-08-12 Xerox Corporation Beam scanning using radiation pattern distortion
JPS55166985A (en) * 1979-06-14 1980-12-26 Fujitsu Ltd Manufacture of semiconductor light emitting device
JPS5681994A (en) * 1979-12-07 1981-07-04 Seiji Yasu Field effect type semiconductor laser and manufacture thereof
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
DE3129558A1 (de) * 1980-07-28 1982-03-18 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur herstellung einer integrierten halbleiterschaltung
JPS57153487A (en) * 1981-03-17 1982-09-22 Fujitsu Ltd Manufacture of semiconductor light emitting device
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
NL8201409A (nl) * 1982-04-02 1983-11-01 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging ervan.
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
JPS5988889A (ja) * 1982-11-12 1984-05-22 Fujitsu Ltd 半導体発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235228A1 (de) * 1971-07-30 1973-02-22 Nippon Electric Co Stimulierbarer halbleiter (laser)
FR2285723A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Ensemble monolithique diode photoemettrice/modulateur
US3962714A (en) * 1974-09-19 1976-06-08 Northern Electric Company Limited Semiconductor optical modulator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 37, no. 2, 15 juillet 1980, American Institute of Physics NEW YORK (US) *
ELECTRONICS LETTERS, vol. 13, no. 5, 3 mars 1977 HITCHIN, HERTS (GB) *

Also Published As

Publication number Publication date
US4521888A (en) 1985-06-04
DE3124633C2 (de) 1986-03-06
US4631802A (en) 1986-12-30
GB2079048B (en) 1984-07-04
JPS5710992A (en) 1982-01-20
DE3124633A1 (de) 1982-03-25
FR2485812B1 (enExample) 1985-02-08
GB2079048A (en) 1982-01-13

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