FR2460543A1 - Transistor a effet de champ du type a jonction et son procede de fabrication - Google Patents

Transistor a effet de champ du type a jonction et son procede de fabrication Download PDF

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Publication number
FR2460543A1
FR2460543A1 FR7916970A FR7916970A FR2460543A1 FR 2460543 A1 FR2460543 A1 FR 2460543A1 FR 7916970 A FR7916970 A FR 7916970A FR 7916970 A FR7916970 A FR 7916970A FR 2460543 A1 FR2460543 A1 FR 2460543A1
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FR
France
Prior art keywords
region
type
conductivity
regions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7916970A
Other languages
English (en)
French (fr)
Other versions
FR2460543B1 (enExample
Inventor
Jacques Thire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7916970A priority Critical patent/FR2460543A1/fr
Priority to NL8003637A priority patent/NL8003637A/nl
Priority to GB8021011A priority patent/GB2052155B/en
Priority to DE19803024166 priority patent/DE3024166A1/de
Priority to JP8990480A priority patent/JPS5610972A/ja
Publication of FR2460543A1 publication Critical patent/FR2460543A1/fr
Application granted granted Critical
Publication of FR2460543B1 publication Critical patent/FR2460543B1/fr
Priority to US06/540,706 priority patent/US4484208A/en
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
FR7916970A 1979-06-29 1979-06-29 Transistor a effet de champ du type a jonction et son procede de fabrication Granted FR2460543A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7916970A FR2460543A1 (fr) 1979-06-29 1979-06-29 Transistor a effet de champ du type a jonction et son procede de fabrication
NL8003637A NL8003637A (nl) 1979-06-29 1980-06-24 Veldeffekttransistor van het overgangstype, en werkwijze voor de vervaardiging ervan.
GB8021011A GB2052155B (enExample) 1979-06-29 1980-06-26
DE19803024166 DE3024166A1 (de) 1979-06-29 1980-06-27 Sperrschichtfeldeffekttransistor und verfahren zu seiner herstellung
JP8990480A JPS5610972A (en) 1979-06-29 1980-06-30 Junction type field effect transistor and method of manufacturing same
US06/540,706 US4484208A (en) 1979-06-29 1983-10-11 Junction-type field-effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7916970A FR2460543A1 (fr) 1979-06-29 1979-06-29 Transistor a effet de champ du type a jonction et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2460543A1 true FR2460543A1 (fr) 1981-01-23
FR2460543B1 FR2460543B1 (enExample) 1983-02-04

Family

ID=9227343

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916970A Granted FR2460543A1 (fr) 1979-06-29 1979-06-29 Transistor a effet de champ du type a jonction et son procede de fabrication

Country Status (6)

Country Link
US (1) US4484208A (enExample)
JP (1) JPS5610972A (enExample)
DE (1) DE3024166A1 (enExample)
FR (1) FR2460543A1 (enExample)
GB (1) GB2052155B (enExample)
NL (1) NL8003637A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5167213A (en) * 1974-12-09 1976-06-10 Hitachi Cable Kinzokusenjotaino renzokukokishodonsochi
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
DE3620686C2 (de) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Strukturierter Halbleiterkörper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
FR1518245A (fr) * 1966-04-07 1968-03-22 Philips Nv Transistors à effet de champ et leur procédé de fabrication
DE2630079A1 (de) * 1976-07-03 1978-01-05 Licentia Gmbh Sperrschicht-feldeffekttransistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1431642A (fr) * 1964-05-06 1966-03-11 Motorola Inc Perfectionnements à la fabrication de limiteurs de courant à effet de champ
US3725136A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Junction field effect transistor and method of fabrication
JPS5216182A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Junction type field effect transistor
US4053915A (en) * 1976-03-22 1977-10-11 Motorola, Inc. Temperature compensated constant current source device
US4066917A (en) * 1976-05-03 1978-01-03 National Semiconductor Corporation Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4172741A (en) * 1977-09-06 1979-10-30 National Semiconductor Corporation Method for laser trimming of bi-FET circuits
JPS54114984A (en) * 1978-02-27 1979-09-07 Nec Corp Semiconductor device
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
FR1518245A (fr) * 1966-04-07 1968-03-22 Philips Nv Transistors à effet de champ et leur procédé de fabrication
DE2630079A1 (de) * 1976-07-03 1978-01-05 Licentia Gmbh Sperrschicht-feldeffekttransistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
GB2052155B (enExample) 1983-04-27
NL8003637A (nl) 1980-12-31
JPS6352785B2 (enExample) 1988-10-20
FR2460543B1 (enExample) 1983-02-04
GB2052155A (enExample) 1981-01-21
JPS5610972A (en) 1981-02-03
US4484208A (en) 1984-11-20
DE3024166A1 (de) 1981-01-15

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