GB2052155A - - Google Patents
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- Publication number
- GB2052155A GB2052155A GB8021011A GB8021011A GB2052155A GB 2052155 A GB2052155 A GB 2052155A GB 8021011 A GB8021011 A GB 8021011A GB 8021011 A GB8021011 A GB 8021011A GB 2052155 A GB2052155 A GB 2052155A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- conductivity type
- semiconductor
- effect transistor
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000002513 implantation Methods 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- -1 phosphorous ions Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916970A FR2460543A1 (fr) | 1979-06-29 | 1979-06-29 | Transistor a effet de champ du type a jonction et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2052155A true GB2052155A (enExample) | 1981-01-21 |
| GB2052155B GB2052155B (enExample) | 1983-04-27 |
Family
ID=9227343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8021011A Expired GB2052155B (enExample) | 1979-06-29 | 1980-06-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4484208A (enExample) |
| JP (1) | JPS5610972A (enExample) |
| DE (1) | DE3024166A1 (enExample) |
| FR (1) | FR2460543A1 (enExample) |
| GB (1) | GB2052155B (enExample) |
| NL (1) | NL8003637A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140616A (en) * | 1980-03-03 | 1984-11-28 | Raytheon Co | Shallow channel field effect transistor |
| GB2140617A (en) * | 1980-03-03 | 1984-11-28 | Raytheon Co | Methods of forming a field effect transistor |
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5167213A (en) * | 1974-12-09 | 1976-06-10 | Hitachi Cable | Kinzokusenjotaino renzokukokishodonsochi |
| DE3620686C2 (de) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Strukturierter Halbleiterkörper |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
| FR1431642A (fr) * | 1964-05-06 | 1966-03-11 | Motorola Inc | Perfectionnements à la fabrication de limiteurs de courant à effet de champ |
| FR1518245A (fr) * | 1966-04-07 | 1968-03-22 | Philips Nv | Transistors à effet de champ et leur procédé de fabrication |
| US3725136A (en) * | 1971-06-01 | 1973-04-03 | Texas Instruments Inc | Junction field effect transistor and method of fabrication |
| JPS5216182A (en) * | 1975-07-30 | 1977-02-07 | Hitachi Ltd | Junction type field effect transistor |
| US4053915A (en) * | 1976-03-22 | 1977-10-11 | Motorola, Inc. | Temperature compensated constant current source device |
| US4066917A (en) * | 1976-05-03 | 1978-01-03 | National Semiconductor Corporation | Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic |
| DE2630079A1 (de) * | 1976-07-03 | 1978-01-05 | Licentia Gmbh | Sperrschicht-feldeffekttransistor |
| US4095252A (en) * | 1976-12-27 | 1978-06-13 | National Semiconductor Corporation | Composite jfet-bipolar transistor structure |
| US4172741A (en) * | 1977-09-06 | 1979-10-30 | National Semiconductor Corporation | Method for laser trimming of bi-FET circuits |
| JPS54114984A (en) * | 1978-02-27 | 1979-09-07 | Nec Corp | Semiconductor device |
| US4314267A (en) * | 1978-06-13 | 1982-02-02 | Ibm Corporation | Dense high performance JFET compatible with NPN transistor formation and merged BIFET |
| US4176368A (en) * | 1978-10-10 | 1979-11-27 | National Semiconductor Corporation | Junction field effect transistor for use in integrated circuits |
-
1979
- 1979-06-29 FR FR7916970A patent/FR2460543A1/fr active Granted
-
1980
- 1980-06-24 NL NL8003637A patent/NL8003637A/nl not_active Application Discontinuation
- 1980-06-26 GB GB8021011A patent/GB2052155B/en not_active Expired
- 1980-06-27 DE DE19803024166 patent/DE3024166A1/de not_active Withdrawn
- 1980-06-30 JP JP8990480A patent/JPS5610972A/ja active Granted
-
1983
- 1983-10-11 US US06/540,706 patent/US4484208A/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140616A (en) * | 1980-03-03 | 1984-11-28 | Raytheon Co | Shallow channel field effect transistor |
| GB2140617A (en) * | 1980-03-03 | 1984-11-28 | Raytheon Co | Methods of forming a field effect transistor |
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2460543A1 (fr) | 1981-01-23 |
| GB2052155B (enExample) | 1983-04-27 |
| NL8003637A (nl) | 1980-12-31 |
| JPS6352785B2 (enExample) | 1988-10-20 |
| FR2460543B1 (enExample) | 1983-02-04 |
| JPS5610972A (en) | 1981-02-03 |
| US4484208A (en) | 1984-11-20 |
| DE3024166A1 (de) | 1981-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19920626 |