JPS6352785B2 - - Google Patents

Info

Publication number
JPS6352785B2
JPS6352785B2 JP55089904A JP8990480A JPS6352785B2 JP S6352785 B2 JPS6352785 B2 JP S6352785B2 JP 55089904 A JP55089904 A JP 55089904A JP 8990480 A JP8990480 A JP 8990480A JP S6352785 B2 JPS6352785 B2 JP S6352785B2
Authority
JP
Japan
Prior art keywords
region
regions
conductivity type
semiconductor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55089904A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5610972A (en
Inventor
Shiiru Jatsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5610972A publication Critical patent/JPS5610972A/ja
Publication of JPS6352785B2 publication Critical patent/JPS6352785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
JP8990480A 1979-06-29 1980-06-30 Junction type field effect transistor and method of manufacturing same Granted JPS5610972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7916970A FR2460543A1 (fr) 1979-06-29 1979-06-29 Transistor a effet de champ du type a jonction et son procede de fabrication

Publications (2)

Publication Number Publication Date
JPS5610972A JPS5610972A (en) 1981-02-03
JPS6352785B2 true JPS6352785B2 (enExample) 1988-10-20

Family

ID=9227343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8990480A Granted JPS5610972A (en) 1979-06-29 1980-06-30 Junction type field effect transistor and method of manufacturing same

Country Status (6)

Country Link
US (1) US4484208A (enExample)
JP (1) JPS5610972A (enExample)
DE (1) DE3024166A1 (enExample)
FR (1) FR2460543A1 (enExample)
GB (1) GB2052155B (enExample)
NL (1) NL8003637A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5167213A (en) * 1974-12-09 1976-06-10 Hitachi Cable Kinzokusenjotaino renzokukokishodonsochi
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
DE3620686C2 (de) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Strukturierter Halbleiterkörper

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
FR1431642A (fr) * 1964-05-06 1966-03-11 Motorola Inc Perfectionnements à la fabrication de limiteurs de courant à effet de champ
FR1518245A (fr) * 1966-04-07 1968-03-22 Philips Nv Transistors à effet de champ et leur procédé de fabrication
US3725136A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Junction field effect transistor and method of fabrication
JPS5216182A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Junction type field effect transistor
US4053915A (en) * 1976-03-22 1977-10-11 Motorola, Inc. Temperature compensated constant current source device
US4066917A (en) * 1976-05-03 1978-01-03 National Semiconductor Corporation Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic
DE2630079A1 (de) * 1976-07-03 1978-01-05 Licentia Gmbh Sperrschicht-feldeffekttransistor
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4172741A (en) * 1977-09-06 1979-10-30 National Semiconductor Corporation Method for laser trimming of bi-FET circuits
JPS54114984A (en) * 1978-02-27 1979-09-07 Nec Corp Semiconductor device
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits

Also Published As

Publication number Publication date
FR2460543A1 (fr) 1981-01-23
GB2052155B (enExample) 1983-04-27
NL8003637A (nl) 1980-12-31
FR2460543B1 (enExample) 1983-02-04
GB2052155A (enExample) 1981-01-21
JPS5610972A (en) 1981-02-03
US4484208A (en) 1984-11-20
DE3024166A1 (de) 1981-01-15

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