FR2457567A1 - Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions - Google Patents

Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions

Info

Publication number
FR2457567A1
FR2457567A1 FR7913219A FR7913219A FR2457567A1 FR 2457567 A1 FR2457567 A1 FR 2457567A1 FR 7913219 A FR7913219 A FR 7913219A FR 7913219 A FR7913219 A FR 7913219A FR 2457567 A1 FR2457567 A1 FR 2457567A1
Authority
FR
France
Prior art keywords
ion implantation
semiconductor component
implantation operation
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913219A
Other languages
English (en)
French (fr)
Other versions
FR2457567B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to FR7913219A priority Critical patent/FR2457567A1/fr
Publication of FR2457567A1 publication Critical patent/FR2457567A1/fr
Application granted granted Critical
Publication of FR2457567B1 publication Critical patent/FR2457567B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Formation Of Insulating Films (AREA)
FR7913219A 1979-05-23 1979-05-23 Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions Granted FR2457567A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7913219A FR2457567A1 (fr) 1979-05-23 1979-05-23 Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913219A FR2457567A1 (fr) 1979-05-23 1979-05-23 Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions

Publications (2)

Publication Number Publication Date
FR2457567A1 true FR2457567A1 (fr) 1980-12-19
FR2457567B1 FR2457567B1 (enExample) 1985-03-01

Family

ID=9225824

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913219A Granted FR2457567A1 (fr) 1979-05-23 1979-05-23 Procede de production d'un composant semi-conducteur, comprenant une operation d'implantation d'ions

Country Status (1)

Country Link
FR (1) FR2457567A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050049A (en) * 1979-05-16 1980-12-31 Fujitsu Ltd Activation of ions implanted in a semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050049A (en) * 1979-05-16 1980-12-31 Fujitsu Ltd Activation of ions implanted in a semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 35, no. 5, 1er mars 1978 (New York, US) T. Ito et al.: "Thermally grown silicon nitride films for high-performance MNS devices", pages 330-331 *
JOURNAL OF APPLIED PHYSICS, vol. 59, no. 1, janvier 1979 (New York, US) T. Hirao et al.: "The concentration profiles of projectiles and recoiled nitrogen in Si after ion implantation through Si3N4 films" *

Also Published As

Publication number Publication date
FR2457567B1 (enExample) 1985-03-01

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