FR2457567A1 - Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment - Google Patents

Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment

Info

Publication number
FR2457567A1
FR2457567A1 FR7913219A FR7913219A FR2457567A1 FR 2457567 A1 FR2457567 A1 FR 2457567A1 FR 7913219 A FR7913219 A FR 7913219A FR 7913219 A FR7913219 A FR 7913219A FR 2457567 A1 FR2457567 A1 FR 2457567A1
Authority
FR
France
Prior art keywords
misfet
prodn
substrate
semiconductor device
implanted impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913219A
Other languages
French (fr)
Other versions
FR2457567B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to FR7913219A priority Critical patent/FR2457567A1/en
Publication of FR2457567A1 publication Critical patent/FR2457567A1/en
Application granted granted Critical
Publication of FR2457567B1 publication Critical patent/FR2457567B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

Semiconductor device, esp. MISFET prodn. involves implantation of an impurity in a semiconducting Si substrate and heating. The novel feature is that a Si3N4 film, esp a gate insulating film of the MISFET, is produced on the substrate by direct thermal nitriding, so that the total amt of ion implanted impurity is retained at the surface of the substrate after heating. Specifically, the Si3N4 film prevents redistribution of the implanted impurity from the substrate into the Si3N4 film when the substrate is heated to activate the impurity and correct damage to the substrate caused by ion implantation.
FR7913219A 1979-05-23 1979-05-23 Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment Granted FR2457567A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7913219A FR2457567A1 (en) 1979-05-23 1979-05-23 Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913219A FR2457567A1 (en) 1979-05-23 1979-05-23 Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment

Publications (2)

Publication Number Publication Date
FR2457567A1 true FR2457567A1 (en) 1980-12-19
FR2457567B1 FR2457567B1 (en) 1985-03-01

Family

ID=9225824

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913219A Granted FR2457567A1 (en) 1979-05-23 1979-05-23 Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment

Country Status (1)

Country Link
FR (1) FR2457567A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050049A (en) * 1979-05-16 1980-12-31 Fujitsu Ltd Activation of ions implanted in a semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050049A (en) * 1979-05-16 1980-12-31 Fujitsu Ltd Activation of ions implanted in a semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 35, no. 5, 1er mars 1978 (New York, US) T. Ito et al.: "Thermally grown silicon nitride films for high-performance MNS devices", pages 330-331 *
JOURNAL OF APPLIED PHYSICS, vol. 59, no. 1, janvier 1979 (New York, US) T. Hirao et al.: "The concentration profiles of projectiles and recoiled nitrogen in Si after ion implantation through Si3N4 films" *

Also Published As

Publication number Publication date
FR2457567B1 (en) 1985-03-01

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