FR2454154A1 - Cellule de memoire a injecter et a grille flottante perfectionnee - Google Patents

Cellule de memoire a injecter et a grille flottante perfectionnee

Info

Publication number
FR2454154A1
FR2454154A1 FR7909006A FR7909006A FR2454154A1 FR 2454154 A1 FR2454154 A1 FR 2454154A1 FR 7909006 A FR7909006 A FR 7909006A FR 7909006 A FR7909006 A FR 7909006A FR 2454154 A1 FR2454154 A1 FR 2454154A1
Authority
FR
France
Prior art keywords
memory cell
floating grid
volatile memory
single injector
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7909006A
Other languages
English (en)
Other versions
FR2454154B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments France SAS
Original Assignee
Texas Instruments France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments France SAS filed Critical Texas Instruments France SAS
Priority to FR7909006A priority Critical patent/FR2454154A1/fr
Priority to US06/073,152 priority patent/US4305083A/en
Publication of FR2454154A1 publication Critical patent/FR2454154A1/fr
Application granted granted Critical
Publication of FR2454154B1 publication Critical patent/FR2454154B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

CELLULE DE MEMOIRE A INJECTEUR ET A GRILLE FLOTTANTE COMPORTANT UNE JONCTION FORMANT INJECTEUR DE CHARGES, DESTINEE A INJECTER SOIT DES ELECTRONS, SOIT DES TROUS DANS LA GRILLE FLOTTANTE LORS DE L'APPLICATION A LADITE JONCTION D'UNE POLARISATION INVERSE AU MOINS EGALE AU SEUIL D'AVALANCHE DE LADITE JONCTION ET DES MOYENS POUR COMMANDER LE FONCTIONNEMENT DE LADITE JONCTION EN MODE D'INJECTION D'ELECTRONS OU EN MODE D'INJECTION DE TROUS, LESDITS MOYENS DE COMMANDE COMPRENANT UN TRANSISTOR D'ADRESSAGE ET UN TRANSISTOR DE LECTURE CONNECTES TOUS DEUX A LADITE JONCTION FORMANT INJECTEUR, CARACTERISEE EN CE QUE LEDIT TRANSISTOR DE LECTURE 23 EST UN TRANSISTOR A COUCHE ISOLANTE EPAISSE, A TENSION DE SEUIL ELEVEE.
FR7909006A 1978-09-19 1979-04-10 Cellule de memoire a injecter et a grille flottante perfectionnee Granted FR2454154A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7909006A FR2454154A1 (fr) 1979-04-10 1979-04-10 Cellule de memoire a injecter et a grille flottante perfectionnee
US06/073,152 US4305083A (en) 1978-09-19 1979-09-07 Single junction charge injector floating gate memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7909006A FR2454154A1 (fr) 1979-04-10 1979-04-10 Cellule de memoire a injecter et a grille flottante perfectionnee

Publications (2)

Publication Number Publication Date
FR2454154A1 true FR2454154A1 (fr) 1980-11-07
FR2454154B1 FR2454154B1 (fr) 1982-10-29

Family

ID=9224155

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7909006A Granted FR2454154A1 (fr) 1978-09-19 1979-04-10 Cellule de memoire a injecter et a grille flottante perfectionnee

Country Status (1)

Country Link
FR (1) FR2454154A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077520A2 (fr) * 1981-10-19 1983-04-27 Deutsche ITT Industries GmbH Cellule de mémoire à porte flottante dans laquelle l'écriture et l'effaçage sont effectués par l'injection de porteurs de charges chauds
EP0079636A2 (fr) * 1981-11-16 1983-05-25 Motorola, Inc. Mémoire morte électriquement programmable et effaçable

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638730A1 (de) * 1974-09-20 1978-03-02 Siemens Ag N-kanal-speicher-fet
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638730A1 (de) * 1974-09-20 1978-03-02 Siemens Ag N-kanal-speicher-fet
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/69 *
EXBK/77 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077520A2 (fr) * 1981-10-19 1983-04-27 Deutsche ITT Industries GmbH Cellule de mémoire à porte flottante dans laquelle l'écriture et l'effaçage sont effectués par l'injection de porteurs de charges chauds
EP0077520A3 (fr) * 1981-10-19 1984-11-28 Deutsche ITT Industries GmbH Cellule de mémoire à porte flottante dans laquelle l'écriture et l'effaçage sont effectués par l'injection de porteurs de charges chauds
EP0079636A2 (fr) * 1981-11-16 1983-05-25 Motorola, Inc. Mémoire morte électriquement programmable et effaçable
EP0079636A3 (fr) * 1981-11-16 1984-09-26 Motorola, Inc. Mémoire morte électriquement programmable et effaçable

Also Published As

Publication number Publication date
FR2454154B1 (fr) 1982-10-29

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