FR2450291A1 - Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat - Google Patents
Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenatInfo
- Publication number
- FR2450291A1 FR2450291A1 FR8004594A FR8004594A FR2450291A1 FR 2450291 A1 FR2450291 A1 FR 2450291A1 FR 8004594 A FR8004594 A FR 8004594A FR 8004594 A FR8004594 A FR 8004594A FR 2450291 A1 FR2450291 A1 FR 2450291A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- grenate
- spinel
- forming
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- SNSBQRXQYMXFJZ-MOKYGWKMSA-N (2s)-6-amino-n-[(2s,3s)-1-amino-3-methyl-1-oxopentan-2-yl]-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-amino-3-phenylpropanoyl]amino]-3-hydroxypropanoyl]amino]propanoyl]amino]-3-hydroxypropanoyl]amino]propanoyl]amino]-4-methylpentanoy Chemical compound CC[C@H](C)[C@@H](C(N)=O)NC(=O)[C@H](CCCCN)NC(=O)[C@H](C)NC(=O)[C@H](CC(C)C)NC(=O)[C@H](C)NC(=O)[C@H](CO)NC(=O)[C@H](C)NC(=O)[C@H](CO)NC(=O)[C@@H](N)CC1=CC=CC=C1 SNSBQRXQYMXFJZ-MOKYGWKMSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7901629A NL7901629A (nl) | 1979-03-01 | 1979-03-01 | Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur. |
| NL7905544A NL7905544A (nl) | 1979-03-01 | 1979-07-17 | Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2450291A1 true FR2450291A1 (fr) | 1980-09-26 |
| FR2450291B1 FR2450291B1 (enrdf_load_html_response) | 1982-11-26 |
Family
ID=26645502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8004594A Granted FR2450291A1 (fr) | 1979-03-01 | 1980-02-29 | Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE3051043C2 (enrdf_load_html_response) |
| FR (1) | FR2450291A1 (enrdf_load_html_response) |
| GB (1) | GB2044629B (enrdf_load_html_response) |
| NL (1) | NL7905544A (enrdf_load_html_response) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2333567A1 (fr) * | 1975-12-01 | 1977-07-01 | Western Electric Co | Procede de croissance de couches epitaxiales lisses sur des substrats desorientes |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698944A (en) * | 1970-06-15 | 1972-10-17 | Texas Instruments Inc | Method of obtaining phased growth of epitaxial layers |
| JPS5133898A (enrdf_load_html_response) * | 1974-09-17 | 1976-03-23 | Hitachi Ltd |
-
1979
- 1979-07-17 NL NL7905544A patent/NL7905544A/nl not_active Application Discontinuation
-
1980
- 1980-02-27 GB GB8006635A patent/GB2044629B/en not_active Expired
- 1980-02-29 FR FR8004594A patent/FR2450291A1/fr active Granted
- 1980-03-03 DE DE19803051043 patent/DE3051043C2/de not_active Expired
- 1980-03-03 DE DE3008040A patent/DE3008040C2/de not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2333567A1 (fr) * | 1975-12-01 | 1977-07-01 | Western Electric Co | Procede de croissance de couches epitaxiales lisses sur des substrats desorientes |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2044629B (en) | 1983-02-09 |
| GB2044629A (en) | 1980-10-22 |
| FR2450291B1 (enrdf_load_html_response) | 1982-11-26 |
| DE3051043C2 (de) | 1986-10-09 |
| NL7905544A (nl) | 1980-09-03 |
| DE3008040A1 (de) | 1980-09-11 |
| DE3008040C2 (de) | 1986-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |