FR2441266A1 - Reseau de micro-lentilles et de micro-deflecteurs pour un tube a faisceau d'electrons - Google Patents

Reseau de micro-lentilles et de micro-deflecteurs pour un tube a faisceau d'electrons

Info

Publication number
FR2441266A1
FR2441266A1 FR7927365A FR7927365A FR2441266A1 FR 2441266 A1 FR2441266 A1 FR 2441266A1 FR 7927365 A FR7927365 A FR 7927365A FR 7927365 A FR7927365 A FR 7927365A FR 2441266 A1 FR2441266 A1 FR 2441266A1
Authority
FR
France
Prior art keywords
micro
electron beam
lenses
deflectors
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7927365A
Other languages
English (en)
Other versions
FR2441266B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Control Data Corp
Original Assignee
Control Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Control Data Corp filed Critical Control Data Corp
Publication of FR2441266A1 publication Critical patent/FR2441266A1/fr
Application granted granted Critical
Publication of FR2441266B1 publication Critical patent/FR2441266B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/80—Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration, for colour switching
    • H01J29/803—Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration, for colour switching for post-acceleration or post-deflection, e.g. for colour switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Micromachines (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

L'INVENTION CONCERNE LES TUBES A FAISCEAU D'ELECTRONS. UN TUBE A FAISCEAU D'ELECTRONS COMPREND NOTAMMENT UN EMPILEMENT DE LAMES DE MICRO-LENTILLES16, 17, 18 ET DES MICRO-DEFLECTEURS12 QUI SONT PLACES EN AVAL ET QUI ASSURENT UNE MICRO-DEFLEXION DU FAISCEAU D'ELECTRONS QUI TRAVERSE CHAQUE MICRO-LENTILLE DES LAMES16, 17, 18, AFIN DE DIRIGER CE FAISCEAU VERS UN POINT PRECIS D'UNE ELECTRODE DE CIBLE13. LES LAMES16, 17, 18 SONT EN SILICIUM MONOCRISTALLIN ET LES OUVERTURES QUI FORMENT LES LENTILLES SONT REALISEES PAR PHOTOGRAVURE. APPLICATION AUX MEMOIRES A ACCES PAR FAISCEAU D'ELECTRONS.
FR7927365A 1978-11-08 1979-11-06 Reseau de micro-lentilles et de micro-deflecteurs pour un tube a faisceau d'electrons Granted FR2441266A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/958,657 US4200794A (en) 1978-11-08 1978-11-08 Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly

Publications (2)

Publication Number Publication Date
FR2441266A1 true FR2441266A1 (fr) 1980-06-06
FR2441266B1 FR2441266B1 (fr) 1984-01-06

Family

ID=25501163

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7927365A Granted FR2441266A1 (fr) 1978-11-08 1979-11-06 Reseau de micro-lentilles et de micro-deflecteurs pour un tube a faisceau d'electrons

Country Status (7)

Country Link
US (1) US4200794A (fr)
JP (1) JPS5569942A (fr)
AU (1) AU527227B2 (fr)
CA (1) CA1147010A (fr)
DE (1) DE2945177A1 (fr)
FR (1) FR2441266A1 (fr)
GB (2) GB2091938B (fr)

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EP0063429A2 (fr) * 1981-04-16 1982-10-27 Control Data Corporation Appareil de lithographie par matrice de faisceaux d'électrons et méthode pour son utilisation
EP0068600A2 (fr) * 1981-06-26 1983-01-05 Control Data Corporation Procédé pour former un assemblage aligné d'une pluralité d'éléments planaires et assemblage aligné ainsi réalisé
EP0069728A1 (fr) * 1981-01-23 1983-01-19 Veeco Instruments Inc. Systeme d'exposition a faisceau de particules chargees en parallele
WO2000046831A1 (fr) * 1999-02-08 2000-08-10 Etec Systems, Inc. Alignement et assemblage de precision de microlentilles et microcolonnes
WO2001009916A1 (fr) * 1999-07-30 2001-02-08 Etec Systems, Inc. Assemblage de microcolonne utilisant un soudage laser par points

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US4419182A (en) * 1981-02-27 1983-12-06 Veeco Instruments Inc. Method of fabricating screen lens array plates
US4390789A (en) * 1981-05-21 1983-06-28 Control Data Corporation Electron beam array lithography system employing multiple parallel array optics channels and method of operation
US4496841A (en) * 1983-04-01 1985-01-29 General Electric Company Radiation detector with resonant frequency translator
DE3504714A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen
US4694178A (en) * 1985-06-28 1987-09-15 Control Data Corporation Multiple channel electron beam optical column lithography system and method of operation
US4728799A (en) * 1985-06-28 1988-03-01 Control Data Corporation Height measurement and correction method for electron beam lithography system
US4718019A (en) * 1985-06-28 1988-01-05 Control Data Corporation Election beam exposure system and an apparatus for carrying out a pattern unwinder
US4742234A (en) * 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
US4980567A (en) * 1988-03-30 1990-12-25 Fujitsu Limited Charged particle beam exposure system using line beams
US4968637A (en) * 1989-05-31 1990-11-06 Raytheon Company Method of manufacture TiW alignment mark and implant mask
US5081063A (en) * 1989-07-20 1992-01-14 Harris Corporation Method of making edge-connected integrated circuit structure
US5225935A (en) * 1989-10-30 1993-07-06 Sharp Kabushiki Kaisha Optical device having a microlens and a process for making microlenses
US5497269A (en) * 1992-06-25 1996-03-05 Lockheed Missiles And Space Company, Inc. Dispersive microlens
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5420720A (en) * 1992-06-25 1995-05-30 Lockheed Missiles & Space Company, Inc. Internally cooled large aperture microlens array with monolithically integrated microscanner
US5444572A (en) * 1992-11-27 1995-08-22 Lockheed Missiles & Space Company, Inc. Wavefront corrector for scanning microlens arrays
US5834783A (en) * 1996-03-04 1998-11-10 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
US6971750B1 (en) * 1998-12-28 2005-12-06 Canon Kabushiki Kaisha Projection display apparatus
JP2001093821A (ja) 1999-09-24 2001-04-06 Toshiba Corp 製造装置組立部品、製造装置組立部品の製造方法、半導体製造装置及び電子ビーム露光装置
US7345290B2 (en) * 1999-10-07 2008-03-18 Agere Systems Inc Lens array for electron beam lithography tool
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP4585661B2 (ja) * 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP2001284230A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4947842B2 (ja) 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP2001283756A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
FR2815677B1 (fr) * 2000-10-25 2003-07-25 Commissariat Energie Atomique Procede et dispositif d'alignement passif de supports, en particulier de plaques portant des composants optiques
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
US6751009B2 (en) 2002-04-30 2004-06-15 The Boeing Company Acousto-micro-optic deflector
US7145157B2 (en) * 2003-09-11 2006-12-05 Applied Materials, Inc. Kinematic ion implanter electrode mounting
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
NL1029847C2 (nl) * 2005-09-01 2007-03-05 Fei Co Werkwijze voor het bepalen van lensfouten in een deeltjes-optisch apparaat.
JP4588602B2 (ja) * 2005-09-30 2010-12-01 株式会社トプコン 静電偏向器の製造方法
US7863563B2 (en) * 2007-03-08 2011-01-04 International Business Machines Corporation Carbon tube for electron beam application
KR101649106B1 (ko) 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조
KR100978793B1 (ko) * 2008-11-19 2010-08-30 한국원자력연구원 다중 전극을 이용한 저에너지·대전류·대면적 빔 제조 장치 및 수송 장치
WO2011105222A1 (fr) * 2010-02-25 2011-09-01 アルプス電気株式会社 Unité d'objectif et son procédé de fabrication
JP2012195095A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズの製造方法
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
JP5744579B2 (ja) * 2011-03-15 2015-07-08 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
WO2019166331A2 (fr) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Procédé et système de faisceaux de particules chargées
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品

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JPS5250161A (en) * 1975-10-20 1977-04-21 Matsushita Electric Ind Co Ltd Display unit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0069728A1 (fr) * 1981-01-23 1983-01-19 Veeco Instruments Inc. Systeme d'exposition a faisceau de particules chargees en parallele
EP0069728A4 (fr) * 1981-01-23 1983-07-08 Veeco Instr Inc Systeme d'exposition a faisceau de particules chargees en parallele.
EP0063429A2 (fr) * 1981-04-16 1982-10-27 Control Data Corporation Appareil de lithographie par matrice de faisceaux d'électrons et méthode pour son utilisation
EP0063429A3 (en) * 1981-04-16 1984-01-04 Control Data Corporation An electron beam array lithography apparatus and a method of operating the same
EP0068600A2 (fr) * 1981-06-26 1983-01-05 Control Data Corporation Procédé pour former un assemblage aligné d'une pluralité d'éléments planaires et assemblage aligné ainsi réalisé
EP0068600A3 (en) * 1981-06-26 1984-01-11 Control Data Corporation A method of forming an aligned assembly of a plurality of planar members and an aligned assembly thereof
WO2000046831A1 (fr) * 1999-02-08 2000-08-10 Etec Systems, Inc. Alignement et assemblage de precision de microlentilles et microcolonnes
US6281508B1 (en) 1999-02-08 2001-08-28 Etec Systems, Inc. Precision alignment and assembly of microlenses and microcolumns
WO2001009916A1 (fr) * 1999-07-30 2001-02-08 Etec Systems, Inc. Assemblage de microcolonne utilisant un soudage laser par points

Also Published As

Publication number Publication date
DE2945177C2 (fr) 1988-08-25
CA1147010A (fr) 1983-05-24
AU5240779A (en) 1980-05-15
FR2441266B1 (fr) 1984-01-06
GB2035680B (en) 1982-12-08
DE2945177A1 (de) 1980-05-29
GB2091938A (en) 1982-08-04
US4200794A (en) 1980-04-29
JPS5569942A (en) 1980-05-27
GB2035680A (en) 1980-06-18
AU527227B2 (en) 1983-02-24
GB2091938B (en) 1982-12-01

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Legal Events

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