FR2440078A1 - Dispositif a transfert de charges - Google Patents

Dispositif a transfert de charges

Info

Publication number
FR2440078A1
FR2440078A1 FR7926166A FR7926166A FR2440078A1 FR 2440078 A1 FR2440078 A1 FR 2440078A1 FR 7926166 A FR7926166 A FR 7926166A FR 7926166 A FR7926166 A FR 7926166A FR 2440078 A1 FR2440078 A1 FR 2440078A1
Authority
FR
France
Prior art keywords
injection transistor
base
transistor
common
potential well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7926166A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2440078A1 publication Critical patent/FR2440078A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

DISPOSITIF A COUPLAGE DE CHARGES QUI COMPREND UNE PARTIE D'ENTREE AYANT UN TRANSISTOR D'INJECTION ET UN OU PLUSIEURS TRANSISTORS DE SEPARATION DISPOSES DANS LE CANAL DU PUITS DE POTENTIEL. LES BASES DES TRANSISTORS SONT EN COMMUN. LE COLLECTEUR DU TRANSISTOR D'INJECTION EST COMMUN AVEC LE CANAL DU PUITS DE POTENTIEL. L'AIRE TOTALE DE LA JONCTION BASE-EMETTEUR DU TRANSISTOR DE SEPARATION EST PLUS GRANDE, DANS UN CERTAIN RAPPORT PREDETERMINE, QUE L'AIRE DE LA JONCTION BASE-EMETTEUR DU TRANSISTOR D'INJECTION. UN SIGNAL D'ENTREE PLUS GRAND QUE LA VALEUR QUI CONVIENT PEUT ETRE APPLIQUE AUX EMETTEURS ET LE COURANT ENTRANT DANS LE COLLECTEUR DU TRANSISTOR D'INJECTION REPRESENTE UNE FRACTION PREDETERMINEE DU SIGNAL APPLIQUE QUI EST FONCTION DES AIRES RELATIVES DESDITES JONCTIONS BASE-EMETTEUR.
FR7926166A 1978-10-23 1979-10-22 Dispositif a transfert de charges Withdrawn FR2440078A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/953,809 US4247788A (en) 1978-10-23 1978-10-23 Charge transfer device with transistor input signal divider

Publications (1)

Publication Number Publication Date
FR2440078A1 true FR2440078A1 (fr) 1980-05-23

Family

ID=25494555

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926166A Withdrawn FR2440078A1 (fr) 1978-10-23 1979-10-22 Dispositif a transfert de charges

Country Status (4)

Country Link
US (1) US4247788A (fr)
JP (1) JPS5559772A (fr)
DE (1) DE2942828A1 (fr)
FR (1) FR2440078A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Ｍｏｓ半導体集積回路
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
US4359651A (en) * 1980-10-21 1982-11-16 Westinghouse Electric Corp. Anti-blooming input structure for charge transfer device
US4590505A (en) * 1984-01-10 1986-05-20 The United States Of America As Represented By The Secretary Of The Air Force Three dimensional optical receiver having programmable gain sensor stages
US5198880A (en) * 1989-06-22 1993-03-30 Kabushiki Kaisha Toshiba Semiconductor integrated circuit and method of making the same
JP2015109422A (ja) * 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 半導体装置の評価方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2105251A1 (fr) * 1970-09-04 1972-04-28 Gen Electric
FR2341913A1 (fr) * 1976-02-17 1977-09-16 Thomson Csf Procede d'introduction d'un signal electrique dans un registre a transfert de charge, et dispositif utilisant un registre ainsi commande
US4099197A (en) * 1976-08-12 1978-07-04 Northern Telecom Limited Complementary input structure for charge coupled device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
US4124862A (en) * 1975-10-01 1978-11-07 General Electric Company Charge transfer filter
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2105251A1 (fr) * 1970-09-04 1972-04-28 Gen Electric
FR2341913A1 (fr) * 1976-02-17 1977-09-16 Thomson Csf Procede d'introduction d'un signal electrique dans un registre a transfert de charge, et dispositif utilisant un registre ainsi commande
US4099197A (en) * 1976-08-12 1978-07-04 Northern Telecom Limited Complementary input structure for charge coupled device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *

Also Published As

Publication number Publication date
JPS5559772A (en) 1980-05-06
DE2942828A1 (de) 1980-04-30
US4247788A (en) 1981-01-27

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Legal Events

Date Code Title Description
ST Notification of lapse