FR2414791A1 - Appareil de lithographie a rayons x et procede d'utilisation - Google Patents

Appareil de lithographie a rayons x et procede d'utilisation

Info

Publication number
FR2414791A1
FR2414791A1 FR7900521A FR7900521A FR2414791A1 FR 2414791 A1 FR2414791 A1 FR 2414791A1 FR 7900521 A FR7900521 A FR 7900521A FR 7900521 A FR7900521 A FR 7900521A FR 2414791 A1 FR2414791 A1 FR 2414791A1
Authority
FR
France
Prior art keywords
ray lithography
lithography
lithography apparatus
line
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7900521A
Other languages
English (en)
Other versions
FR2414791B1 (fr
Inventor
William Derek Buckley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Publication of FR2414791A1 publication Critical patent/FR2414791A1/fr
Application granted granted Critical
Publication of FR2414791B1 publication Critical patent/FR2414791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • X-Ray Techniques (AREA)

Abstract

a. Appareil de lithographie à rayons X et procédé d'utilisation. b. Il comprend une anti-cathode en tungstène, l'appareil fonctionnant de façon à produire la ligne M du tungstène, cette ligne se situant à une longueur d'onde qui sera absorbée par le support utilisé normalement pour lithographie. Pour développer le support, qui a été conçu initialement pour être utilisé dans la lithographie par faisceau d'électrons, on développe dans un premier temps avec une haute concentration et dans un deuxième temps avec une concentration la plus faible permettant d'obtenir un développement complet c. Applications courantes.
FR7900521A 1978-01-16 1979-01-10 Appareil de lithographie a rayons x et procede d'utilisation Granted FR2414791A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/869,541 US4215192A (en) 1978-01-16 1978-01-16 X-ray lithography apparatus and method of use

Publications (2)

Publication Number Publication Date
FR2414791A1 true FR2414791A1 (fr) 1979-08-10
FR2414791B1 FR2414791B1 (fr) 1984-11-09

Family

ID=25353753

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7900521A Granted FR2414791A1 (fr) 1978-01-16 1979-01-10 Appareil de lithographie a rayons x et procede d'utilisation

Country Status (8)

Country Link
US (1) US4215192A (fr)
JP (1) JPS54103346A (fr)
CA (1) CA1118914A (fr)
CH (1) CH652236A5 (fr)
DE (1) DE2854693A1 (fr)
FR (1) FR2414791A1 (fr)
GB (2) GB2012452B (fr)
IT (1) IT1114336B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4388728A (en) * 1978-11-20 1983-06-14 The Machlett Laboratories, Incorporated Soft X-ray lithography system
US4357364A (en) * 1981-04-27 1982-11-02 Rockwell International Corporation High rate resist polymerization method
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
JPS58111318A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 現像方法
US4439870A (en) * 1981-12-28 1984-03-27 Bell Telephone Laboratories, Incorporated X-Ray source and method of making same
US4493097A (en) * 1982-08-30 1985-01-08 The Perkin-Elmer Corporation Electron gun assembly
US4665541A (en) * 1983-06-06 1987-05-12 The University Of Rochester X-ray lithography
DE3330806A1 (de) * 1983-08-26 1985-03-14 Feinfocus Röntgensysteme GmbH, 3050 Wunstorf Roentgenlithographiegeraet
EP0141041B1 (fr) * 1983-08-26 1990-01-03 feinfocus Verwaltungs GmbH & Co. KG Appareil de lithographie par rayons X
US4534047A (en) * 1984-01-06 1985-08-06 The Perkin-Elmer Corporation Mask ring assembly for X-ray lithography
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
US4610020A (en) * 1984-01-06 1986-09-02 The Perkin-Elmer Corporation X-ray mask ring and apparatus for making same
GB2155201B (en) * 1984-02-24 1988-07-13 Canon Kk An x-ray exposure apparatus
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JP3702108B2 (ja) * 1998-10-07 2005-10-05 株式会社東芝 レジストパターン形成方法
EP3696845A1 (fr) * 2019-02-12 2020-08-19 Malvern Panalytical B.V. Tube à rayons x et système d'analyse à rayons x

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742229A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask alignment system
FR2168053A5 (fr) * 1972-01-14 1973-08-24 Massachusett Inst Technolog
FR2244196A1 (fr) * 1973-09-17 1975-04-11 Siemens Ag
GB1415811A (en) * 1973-01-03 1975-11-26 Machlett Lab Inc Rotating anode x-ray tube

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168053A5 (fr) * 1972-01-14 1973-08-24 Massachusett Inst Technolog
US3742229A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask alignment system
GB1415811A (en) * 1973-01-03 1975-11-26 Machlett Lab Inc Rotating anode x-ray tube
FR2244196A1 (fr) * 1973-09-17 1975-04-11 Siemens Ag

Also Published As

Publication number Publication date
IT7947655A0 (it) 1979-01-16
US4215192A (en) 1980-07-29
JPS54103346A (en) 1979-08-14
FR2414791B1 (fr) 1984-11-09
GB2012452A (en) 1979-07-25
GB2012452B (en) 1983-01-06
DE2854693A1 (de) 1979-07-19
GB2073901A (en) 1981-10-21
CH652236A5 (de) 1985-10-31
CA1118914A (fr) 1982-02-23
IT1114336B (it) 1986-01-27

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Legal Events

Date Code Title Description
ST Notification of lapse