FR2168053A5 - - Google Patents

Info

Publication number
FR2168053A5
FR2168053A5 FR7301132A FR7301132A FR2168053A5 FR 2168053 A5 FR2168053 A5 FR 2168053A5 FR 7301132 A FR7301132 A FR 7301132A FR 7301132 A FR7301132 A FR 7301132A FR 2168053 A5 FR2168053 A5 FR 2168053A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7301132A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Application granted granted Critical
Publication of FR2168053A5 publication Critical patent/FR2168053A5/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/02—Vessels; Containers; Shields associated therewith; Vacuum locks
    • H01J5/18—Windows permeable to X-rays, gamma-rays, or particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • X-Ray Techniques (AREA)
  • ing And Chemical Polishing (AREA)
FR7301132A 1972-01-14 1973-01-12 Expired FR2168053A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21790272A 1972-01-14 1972-01-14

Publications (1)

Publication Number Publication Date
FR2168053A5 true FR2168053A5 (fr) 1973-08-24

Family

ID=22812948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7301132A Expired FR2168053A5 (fr) 1972-01-14 1973-01-12

Country Status (4)

Country Link
US (1) US3743842A (fr)
JP (1) JPS5141551B2 (fr)
DE (1) DE2302116C3 (fr)
FR (1) FR2168053A5 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414791A1 (fr) * 1978-01-16 1979-08-10 Perkin Elmer Corp Appareil de lithographie a rayons x et procede d'utilisation
EP0007898A1 (fr) * 1977-12-05 1980-02-06 Western Electric Co Système de lithographie à rayons X à haute résolution et procédé de réalisation de dispositifs microminiatures par irradiation à l'aide d'un tel système.
EP0323264A2 (fr) * 1987-12-29 1989-07-05 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892973A (en) * 1974-02-15 1975-07-01 Bell Telephone Labor Inc Mask structure for X-ray lithography
US3925677A (en) * 1974-04-15 1975-12-09 Bell Telephone Labor Inc Platinum oxide lithographic masks
FR2279135A1 (fr) * 1974-07-19 1976-02-13 Ibm Procede de fabrication d'un masque pour lithographie aux rayons x
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3974382A (en) * 1975-01-06 1976-08-10 Massachusetts Institute Of Technology Lithographic mask attraction system
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks
US4028547A (en) * 1975-06-30 1977-06-07 Bell Telephone Laboratories, Incorporated X-ray photolithography
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
US4085329A (en) * 1976-05-03 1978-04-18 Hughes Aircraft Company Hard X-ray and fluorescent X-ray detection of alignment marks for precision mask alignment
DE2635275C2 (de) * 1976-08-05 1984-09-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Justierung eines scheibenförmigen Substrates relativ zu einer Fotomaske in einem Röntgenstrahlbelichtungsgerät
JPS5319765A (en) * 1976-08-06 1978-02-23 Matsushita Electric Ind Co Ltd Irradiation method of x-rays
JPS5355470U (fr) * 1976-10-13 1978-05-12
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4200395A (en) * 1977-05-03 1980-04-29 Massachusetts Institute Of Technology Alignment of diffraction gratings
DE2722958A1 (de) * 1977-05-20 1978-11-23 Siemens Ag Verfahren zur justierung einer halbleiterscheibe relativ zu einer bestrahlungsmaske bei der roentgenstrahl-fotolithografie
US4122335A (en) * 1977-06-17 1978-10-24 Hughes Aircraft Company Method and apparatus for mask to wafer gap control in X-ray lithography
JPS5411677A (en) * 1977-06-27 1979-01-27 Rockwell International Corp Mask used for fine line lithography and method of producing same
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4194123A (en) * 1978-05-12 1980-03-18 Rockwell International Corporation Lithographic apparatus
USRE33992E (en) * 1978-08-15 1992-07-14 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
US4184078A (en) * 1978-08-15 1980-01-15 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
JPS5463682A (en) * 1978-08-17 1979-05-22 Fujitsu Ltd Production of mask for x-ray exposure
DE2841124C2 (de) * 1978-09-21 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von elektronischen Halbleiterbauelementen durch Röntgen-Lithographie
US4388728A (en) * 1978-11-20 1983-06-14 The Machlett Laboratories, Incorporated Soft X-ray lithography system
US4254174A (en) * 1979-03-29 1981-03-03 Massachusetts Institute Of Technology Supported membrane composite structure and its method of manufacture
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography
US4222815A (en) * 1979-06-04 1980-09-16 The Babcock & Wilcox Company Isotropic etching of silicon strain gages
US4329410A (en) * 1979-12-26 1982-05-11 The Perkin-Elmer Corporation Production of X-ray lithograph masks
DE3006543A1 (de) * 1980-02-21 1981-08-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mit strukturen versehenen lackschichten fuer die mikrogalvanoplastik mittels roentgenstrahlen
JPS57157523A (en) * 1981-03-25 1982-09-29 Hitachi Ltd Forming method for pattern
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
DE3232499A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
US4665541A (en) * 1983-06-06 1987-05-12 The University Of Rochester X-ray lithography
DE3330806A1 (de) * 1983-08-26 1985-03-14 Feinfocus Röntgensysteme GmbH, 3050 Wunstorf Roentgenlithographiegeraet
DE3339624A1 (de) * 1983-11-02 1985-05-09 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie
US4610020A (en) * 1984-01-06 1986-09-02 The Perkin-Elmer Corporation X-ray mask ring and apparatus for making same
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
US4534047A (en) * 1984-01-06 1985-08-06 The Perkin-Elmer Corporation Mask ring assembly for X-ray lithography
US4700371A (en) * 1984-11-08 1987-10-13 Hampshire Instruments, Inc. Long life x-ray source target
CA1254261A (fr) * 1984-11-08 1989-05-16 James M. Forsyth Cible de longue duree utile pour emissions de radiographie
US4608268A (en) * 1985-07-23 1986-08-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US5175757A (en) * 1990-08-22 1992-12-29 Sandia Corporation-Org. 250 Apparatus and method to enhance X-ray production in laser produced plasmas
US5288569A (en) * 1992-04-23 1994-02-22 International Business Machines Corporation Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
US5820769A (en) * 1995-05-24 1998-10-13 Regents Of The University Of Minnesota Method for making magnetic storage having discrete elements with quantized magnetic moments
US20040137734A1 (en) * 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6309580B1 (en) 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US7758794B2 (en) * 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US5809103A (en) * 1996-12-20 1998-09-15 Massachusetts Institute Of Technology X-ray lithography masking

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1933652A (en) * 1929-02-20 1933-11-07 Philips Nv Process of making x-ray photographs
US2382674A (en) * 1942-08-27 1945-08-14 Eastman Kodak Co Method of making images on metal plates
US3118786A (en) * 1961-10-30 1964-01-21 Gen Electric Recording medium having an image receiving coating of a copolymer of a styrene and n-butyl methacrylate
US3447924A (en) * 1965-08-16 1969-06-03 Charles J Trzyna Aligning method
DE1522525C3 (de) * 1965-12-06 1975-01-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Photolackmaske
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007898A1 (fr) * 1977-12-05 1980-02-06 Western Electric Co Système de lithographie à rayons X à haute résolution et procédé de réalisation de dispositifs microminiatures par irradiation à l'aide d'un tel système.
EP0007898A4 (fr) * 1977-12-05 1980-10-15 Western Electric Co Système de lithographie à rayons X à haute résolution et procédé de réalisation de dispositifs microminiatures par irradiation à l'aide d'un tel système.
FR2414791A1 (fr) * 1978-01-16 1979-08-10 Perkin Elmer Corp Appareil de lithographie a rayons x et procede d'utilisation
EP0323264A2 (fr) * 1987-12-29 1989-07-05 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice
EP0323264A3 (fr) * 1987-12-29 1990-05-16 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice
US5048066A (en) * 1987-12-29 1991-09-10 Canon Kabushiki Kaisha X-ray exposure process for preventing electrostatic attraction or contact of X-ray masks

Also Published As

Publication number Publication date
DE2302116A1 (de) 1973-07-19
US3743842A (en) 1973-07-03
JPS5141551B2 (fr) 1976-11-10
JPS4882778A (fr) 1973-11-05
DE2302116C3 (de) 1978-11-02
DE2302116B2 (de) 1978-03-09

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Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
BR Restoration of rights