FR2411492A1 - Composant semi-conducteur constituant notamment une resistance a effet de champ a deux bornes - Google Patents

Composant semi-conducteur constituant notamment une resistance a effet de champ a deux bornes

Info

Publication number
FR2411492A1
FR2411492A1 FR7834217A FR7834217A FR2411492A1 FR 2411492 A1 FR2411492 A1 FR 2411492A1 FR 7834217 A FR7834217 A FR 7834217A FR 7834217 A FR7834217 A FR 7834217A FR 2411492 A1 FR2411492 A1 FR 2411492A1
Authority
FR
France
Prior art keywords
semiconductor component
terminal field
component constituting
resistor
field resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7834217A
Other languages
English (en)
French (fr)
Other versions
FR2411492B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of FR2411492A1 publication Critical patent/FR2411492A1/fr
Application granted granted Critical
Publication of FR2411492B1 publication Critical patent/FR2411492B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7834217A 1977-12-06 1978-12-05 Composant semi-conducteur constituant notamment une resistance a effet de champ a deux bornes Granted FR2411492A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85804977A 1977-12-06 1977-12-06

Publications (2)

Publication Number Publication Date
FR2411492A1 true FR2411492A1 (fr) 1979-07-06
FR2411492B1 FR2411492B1 (https=) 1983-06-24

Family

ID=25327353

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7834217A Granted FR2411492A1 (fr) 1977-12-06 1978-12-05 Composant semi-conducteur constituant notamment une resistance a effet de champ a deux bornes

Country Status (5)

Country Link
JP (1) JPS5483782A (https=)
CA (1) CA1132720A (https=)
DE (1) DE2852776A1 (https=)
FR (1) FR2411492A1 (https=)
GB (1) GB2009502B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
GB2234392B (en) * 1985-05-15 1991-05-01 Hughes Aircraft Co Monolithic high-frequency-signal switch and power limiter device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531927A1 (de) * 1974-07-23 1976-02-05 Rca Corp Polykristallines silizium-widerstandselement fuer integrierte schaltungen
US4035757A (en) * 1975-11-24 1977-07-12 Rca Corporation Semiconductor device resistors having selected temperature coefficients

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531927A1 (de) * 1974-07-23 1976-02-05 Rca Corp Polykristallines silizium-widerstandselement fuer integrierte schaltungen
US4035757A (en) * 1975-11-24 1977-07-12 Rca Corporation Semiconductor device resistors having selected temperature coefficients

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Also Published As

Publication number Publication date
GB2009502A (en) 1979-06-13
GB2009502B (en) 1982-03-10
DE2852776A1 (de) 1979-06-13
CA1132720A (en) 1982-09-28
JPS5483782A (en) 1979-07-04
FR2411492B1 (https=) 1983-06-24

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Legal Events

Date Code Title Description
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