CA1132720A - Two terminal field effect resistor - Google Patents
Two terminal field effect resistorInfo
- Publication number
- CA1132720A CA1132720A CA000316704A CA316704A CA1132720A CA 1132720 A CA1132720 A CA 1132720A CA 000316704 A CA000316704 A CA 000316704A CA 316704 A CA316704 A CA 316704A CA 1132720 A CA1132720 A CA 1132720A
- Authority
- CA
- Canada
- Prior art keywords
- resistor
- field effect
- layer
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000001465 metallisation Methods 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000000670 limiting effect Effects 0.000 abstract description 17
- 230000002146 bilateral effect Effects 0.000 abstract description 11
- 241000951490 Hylocharis chrysura Species 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 41
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 230000004224 protection Effects 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LBUIKNKQOBTCII-BLLLJJGKSA-N (4r,6s)-5-(4-chlorophenyl)sulfonyl-4,6-diethyl-1,4,6,7-tetrahydropyrazolo[4,3-c]pyridine Chemical compound N1([C@H](CC)C2=CNN=C2C[C@@H]1CC)S(=O)(=O)C1=CC=C(Cl)C=C1 LBUIKNKQOBTCII-BLLLJJGKSA-N 0.000 description 1
- NSMXQKNUPPXBRG-SECBINFHSA-N (R)-lisofylline Chemical compound O=C1N(CCCC[C@H](O)C)C(=O)N(C)C2=C1N(C)C=N2 NSMXQKNUPPXBRG-SECBINFHSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 241000003910 Baronia <angiosperm> Species 0.000 description 1
- 101100285518 Drosophila melanogaster how gene Proteins 0.000 description 1
- 244000187656 Eucalyptus cornuta Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 101150110946 gatC gene Proteins 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 108010052322 limitin Proteins 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000384758A CA1135873A (en) | 1977-12-06 | 1981-08-27 | Two terminal field effect resistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85804977A | 1977-12-06 | 1977-12-06 | |
| US858,049 | 1977-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1132720A true CA1132720A (en) | 1982-09-28 |
Family
ID=25327353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000316704A Expired CA1132720A (en) | 1977-12-06 | 1978-11-22 | Two terminal field effect resistor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5483782A (https=) |
| CA (1) | CA1132720A (https=) |
| DE (1) | DE2852776A1 (https=) |
| FR (1) | FR2411492A1 (https=) |
| GB (1) | GB2009502B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842269A (ja) * | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｉｓ型可変抵抗器 |
| GB2234392B (en) * | 1985-05-15 | 1991-05-01 | Hughes Aircraft Co | Monolithic high-frequency-signal switch and power limiter device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
| US4035757A (en) * | 1975-11-24 | 1977-07-12 | Rca Corporation | Semiconductor device resistors having selected temperature coefficients |
-
1978
- 1978-11-20 GB GB7845243A patent/GB2009502B/en not_active Expired
- 1978-11-22 CA CA000316704A patent/CA1132720A/en not_active Expired
- 1978-11-27 JP JP14643678A patent/JPS5483782A/ja active Pending
- 1978-12-05 FR FR7834217A patent/FR2411492A1/fr active Granted
- 1978-12-06 DE DE19782852776 patent/DE2852776A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2009502A (en) | 1979-06-13 |
| GB2009502B (en) | 1982-03-10 |
| DE2852776A1 (de) | 1979-06-13 |
| FR2411492A1 (fr) | 1979-07-06 |
| JPS5483782A (en) | 1979-07-04 |
| FR2411492B1 (https=) | 1983-06-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |