FR2398386A1 - Procede et structure pour faire se croiser des signaux d'information dans un dispositif a circuit integre - Google Patents
Procede et structure pour faire se croiser des signaux d'information dans un dispositif a circuit integreInfo
- Publication number
- FR2398386A1 FR2398386A1 FR7821183A FR7821183A FR2398386A1 FR 2398386 A1 FR2398386 A1 FR 2398386A1 FR 7821183 A FR7821183 A FR 7821183A FR 7821183 A FR7821183 A FR 7821183A FR 2398386 A1 FR2398386 A1 FR 2398386A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- substrate
- ion implantation
- implantation region
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Waveguides (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
La présente invention concerne un procédé et une structure pour faire se croiser des signaux d'information dans un dispositif à circuit intégré. Sur un substrat 12, une bande de silicium polycristallin triconductrice 20, forme une première ligne porteuse de signal au-dessus d'une couche d'oxyde 18. En-dessous du substrat, est disposée une région d'implantation d'ions 26 de type de conductivité opposé à celui du substrat. La région d'implantation d'ions 26 rejoint des régions diffusées 28 et 30 de part et d'autre de la bande de silicium polycristallin. Les régions diffusées sont du même type de conductivité que la région à implatation d'ions, formant ainsi avec celle-ci une seconde ligne porteuse de signaux transverse à la première et la croisant Application à la diminution de la surface occupée par des lignes porteuses de signaux se croisant sur un substrat de circuit intégré.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81636577A | 1977-07-18 | 1977-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2398386A1 true FR2398386A1 (fr) | 1979-02-16 |
FR2398386B1 FR2398386B1 (fr) | 1984-03-23 |
Family
ID=25220405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7821183A Granted FR2398386A1 (fr) | 1977-07-18 | 1978-07-17 | Procede et structure pour faire se croiser des signaux d'information dans un dispositif a circuit integre |
Country Status (5)
Country | Link |
---|---|
JP (2) | JPS5496384A (fr) |
DE (1) | DE2831523A1 (fr) |
FR (1) | FR2398386A1 (fr) |
GB (1) | GB2001472B (fr) |
IT (1) | IT1097967B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550652A (en) * | 1978-09-19 | 1980-04-12 | Agency Of Ind Science & Technol | Composite element adjusting method by ion beam |
US4381595A (en) * | 1979-10-09 | 1983-05-03 | Mitsubishi Denki Kabushiki Kaisha | Process for preparing multilayer interconnection |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2125462A1 (fr) * | 1971-02-16 | 1972-09-29 | Texas Instruments Inc | |
FR2134468A1 (fr) * | 1971-04-30 | 1972-12-08 | Standard Microsystems | |
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947464B2 (ja) * | 1974-09-11 | 1984-11-19 | 株式会社日立製作所 | 半導体装置 |
US4035198A (en) * | 1976-06-30 | 1977-07-12 | International Business Machines Corporation | Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors |
-
1978
- 1978-07-17 FR FR7821183A patent/FR2398386A1/fr active Granted
- 1978-07-17 IT IT25819/78A patent/IT1097967B/it active
- 1978-07-18 JP JP8760878A patent/JPS5496384A/ja active Pending
- 1978-07-18 DE DE19782831523 patent/DE2831523A1/de not_active Ceased
- 1978-07-18 GB GB7830229A patent/GB2001472B/en not_active Expired
-
1983
- 1983-11-30 JP JP1983183901U patent/JPS59112944U/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2125462A1 (fr) * | 1971-02-16 | 1972-09-29 | Texas Instruments Inc | |
FR2134468A1 (fr) * | 1971-04-30 | 1972-12-08 | Standard Microsystems | |
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
Non-Patent Citations (1)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN, vol.17, no.10, mars 1975, New York (US) * |
Also Published As
Publication number | Publication date |
---|---|
IT1097967B (it) | 1985-08-31 |
IT7825819A0 (it) | 1978-07-17 |
DE2831523A1 (de) | 1979-02-01 |
FR2398386B1 (fr) | 1984-03-23 |
JPS5496384A (en) | 1979-07-30 |
GB2001472A (en) | 1979-01-31 |
JPS59112944U (ja) | 1984-07-30 |
GB2001472B (en) | 1982-02-17 |
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Richards | The sedimentology of the lower Trias, Western Alps |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |