FR2389156A1 - Substance sensible aux rayons x pour photogravure - Google Patents
Substance sensible aux rayons x pour photogravureInfo
- Publication number
- FR2389156A1 FR2389156A1 FR7812272A FR7812272A FR2389156A1 FR 2389156 A1 FR2389156 A1 FR 2389156A1 FR 7812272 A FR7812272 A FR 7812272A FR 7812272 A FR7812272 A FR 7812272A FR 2389156 A1 FR2389156 A1 FR 2389156A1
- Authority
- FR
- France
- Prior art keywords
- rays
- terpolymer
- bromine
- photogravure
- photosensitive substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
Abstract
La présente invention concerne un procédé de photogravure. Afin d'améliorer la précision et la définition du motif d'un circuit intégré en cours de réalisation, il est fait emploi de substances sensibles aux rayons X de préférence à celles sensibles aux rayons ultraviolets. L'invention présente une substance photosensible qui veut être, par exemple, un terpolymère de méthacrylate de methyle, d'acrylate d'éthyle ou d'éthacrylate de glycidyle partiellement estérifié par de l'acide méthylacrilique. Au moins l'un des atomes d'hydrogène de chaque unité terpolymère est remplacé par du brome. Si on incorpore 10 à 15 % de sa masse de brome dans une substance photosensible, la sensibilité de cette dernière aux rayons X mous peut être multipliée par 10 ou 20. L'invention trouve une application, par exemple, dans la fabrication des circuits intégrés.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1730877A GB1602724A (en) | 1977-04-26 | 1977-04-26 | Resist material for x-ray lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2389156A1 true FR2389156A1 (fr) | 1978-11-24 |
FR2389156B1 FR2389156B1 (fr) | 1983-08-26 |
Family
ID=10092910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7812272A Granted FR2389156A1 (fr) | 1977-04-26 | 1978-04-26 | Substance sensible aux rayons x pour photogravure |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS53135703A (fr) |
DE (1) | DE2817426A1 (fr) |
FR (1) | FR2389156A1 (fr) |
GB (1) | GB1602724A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016679A1 (fr) * | 1979-03-09 | 1980-10-01 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
FR2451050A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
FR2461967A2 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4588671A (en) * | 1981-12-21 | 1986-05-13 | Institut Khimii Akademii Nauk Sssr | Photo and electron resist with donor-acceptor complex and light sensitive compound |
JP2002110505A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 露光方法、露光装置、x線マスク、レジスト、半導体装置および微細構造体 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
JPS53100774A (en) * | 1977-02-15 | 1978-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Resist composition for short eavelength ultraviolet light |
JPS53102025A (en) * | 1977-02-18 | 1978-09-06 | Hitachi Ltd | Radiation sensitive organic high molecular material |
JPS53116831A (en) * | 1977-03-23 | 1978-10-12 | Toshiba Corp | Radioactive-ray sensitive material |
-
1977
- 1977-04-26 GB GB1730877A patent/GB1602724A/en not_active Expired
-
1978
- 1978-04-21 DE DE19782817426 patent/DE2817426A1/de not_active Withdrawn
- 1978-04-24 JP JP4797378A patent/JPS53135703A/ja active Granted
- 1978-04-26 FR FR7812272A patent/FR2389156A1/fr active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016679A1 (fr) * | 1979-03-09 | 1980-10-01 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
FR2451050A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
FR2461967A2 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
Also Published As
Publication number | Publication date |
---|---|
FR2389156B1 (fr) | 1983-08-26 |
GB1602724A (en) | 1981-11-18 |
DE2817426A1 (de) | 1978-11-02 |
JPS5721698B2 (fr) | 1982-05-08 |
JPS53135703A (en) | 1978-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |