FR2387079A1 - Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux - Google Patents

Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux

Info

Publication number
FR2387079A1
FR2387079A1 FR7809245A FR7809245A FR2387079A1 FR 2387079 A1 FR2387079 A1 FR 2387079A1 FR 7809245 A FR7809245 A FR 7809245A FR 7809245 A FR7809245 A FR 7809245A FR 2387079 A1 FR2387079 A1 FR 2387079A1
Authority
FR
France
Prior art keywords
fusion
chemistry
real
control
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7809245A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2387079A1 publication Critical patent/FR2387079A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/916—Oxygen testing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Abstract

Procédé pour contrôler la résistivité d'un lingot cristallin. On prélève un échantillon d'un dispositif 11 pour faire croître un cristal en introduisant un dispositif 71 de prise d'échantillons dans un orifice 61 jusqu'à ce que l'extrémité du dispositif 71 soit plongée dans substance 12 fondue. On analyse ensuite cet échantillon et l'on modifie en conséquence la composition de la masse fondue. Industrie des semi-conducteurs.
FR7809245A 1977-04-13 1978-03-30 Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux Withdrawn FR2387079A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/787,135 US4134785A (en) 1977-04-13 1977-04-13 Real-time analysis and control of melt-chemistry in crystal growing operations

Publications (1)

Publication Number Publication Date
FR2387079A1 true FR2387079A1 (fr) 1978-11-10

Family

ID=25140520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809245A Withdrawn FR2387079A1 (fr) 1977-04-13 1978-03-30 Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux

Country Status (6)

Country Link
US (1) US4134785A (fr)
JP (1) JPS53128271A (fr)
BE (1) BE865913A (fr)
DE (1) DE2815612A1 (fr)
FR (1) FR2387079A1 (fr)
IT (1) IT7867817A0 (fr)

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JPS62226890A (ja) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk 単結晶及びその製造方法
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
DE68908872T2 (de) * 1989-02-03 1994-02-10 Mitsubishi Metal Corp Verfahren zum Ziehen von Einkristallen.
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
SG49058A1 (en) * 1993-07-21 1998-05-18 Memc Electronic Materials Improved method for growing silicon crystal
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility
WO2000073542A1 (fr) * 1999-05-28 2000-12-07 Shin-Etsu Handotai Co., Ltd. Monocristal de czochralski dope au ga et son procede de fabrication
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
FR2808809B1 (fr) * 2000-05-11 2003-06-27 Emix Installation de fabrication en continu de barreau de silicium multicristallin
DE10202357C2 (de) * 2001-06-21 2003-04-24 Schott Glas Verfahren und Vorrichtung zum Entnehmen einer Glasprobe aus einer Glassschmelze, insbesondere aus Bereichen unterhalb der Oberfläche der Glasschmelze
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
JP4154388B2 (ja) * 2004-12-27 2008-09-24 キヤノン株式会社 被対象物を透過した電磁波の状態を検出するための検出装置
JP4961753B2 (ja) * 2006-01-20 2012-06-27 株式会社Ｓｕｍｃｏ 単結晶製造管理システム及び方法
KR101841032B1 (ko) 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정
CN102175490A (zh) * 2011-01-27 2011-09-07 北京科技大学 一种连铸结晶器钢水快速汲取器
US9809900B2 (en) * 2013-10-30 2017-11-07 Siemens Medical Solutions Usa, Inc. Crystal growth chamber with O-ring seal for Czochralski growth station
CN104695009B (zh) * 2015-03-30 2017-04-19 江苏盎华光伏工程技术研究中心有限公司 一种实现在线电阻率调试的单晶炉及其控制方法
JP6694652B2 (ja) * 2016-09-02 2020-05-20 信越化学工業株式会社 光モジュール、及び、光路光軸調整方法
US10954606B2 (en) 2018-06-27 2021-03-23 Globalwafers Co., Ltd. Methods for modeling the impurity concentration of a single crystal silicon ingot
US11047066B2 (en) * 2018-06-27 2021-06-29 Globalwafers Co., Ltd. Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1531730A (fr) * 1966-06-13 1968-07-05 Siemens Ag Procédé pour préparer des tiges de silicium monocristallines
FR2038156A1 (fr) * 1969-04-02 1971-01-08 Motorola Inc

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103627A (en) * 1960-05-18 1963-09-10 Polarad Electronics Corp Microwave transmission molecular identification system employing wave propagation mode detectors
US3354723A (en) * 1965-04-09 1967-11-28 Jones & Laughlin Steel Corp Molten metal sampler
US3582778A (en) * 1968-03-20 1971-06-01 Brookdeal Electronics Ltd Microwave magnetic resonance spectrometers incorporating gunn-effect oscillators
GB1352567A (en) * 1971-04-28 1974-05-08 Baeckerud S L Method of checking adjusting the content of crystallization nuclei in a melt
US3859857A (en) * 1972-08-02 1975-01-14 Richard A Falk Molten metal stream sampler
US3905238A (en) * 1973-06-07 1975-09-16 Richard A Falk Pneumatic metal sampler

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1531730A (fr) * 1966-06-13 1968-07-05 Siemens Ag Procédé pour préparer des tiges de silicium monocristallines
FR2038156A1 (fr) * 1969-04-02 1971-01-08 Motorola Inc

Also Published As

Publication number Publication date
US4134785A (en) 1979-01-16
JPS53128271A (en) 1978-11-09
DE2815612A1 (de) 1978-10-19
BE865913A (fr) 1978-07-31
IT7867817A0 (it) 1978-04-12

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