JPS53128271A - Method of controlling intrinsic resistivity of crystal ingot - Google Patents
Method of controlling intrinsic resistivity of crystal ingotInfo
- Publication number
- JPS53128271A JPS53128271A JP4271378A JP4271378A JPS53128271A JP S53128271 A JPS53128271 A JP S53128271A JP 4271378 A JP4271378 A JP 4271378A JP 4271378 A JP4271378 A JP 4271378A JP S53128271 A JPS53128271 A JP S53128271A
- Authority
- JP
- Japan
- Prior art keywords
- crystal ingot
- intrinsic resistivity
- controlling intrinsic
- controlling
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/916—Oxygen testing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/787,135 US4134785A (en) | 1977-04-13 | 1977-04-13 | Real-time analysis and control of melt-chemistry in crystal growing operations |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53128271A true JPS53128271A (en) | 1978-11-09 |
Family
ID=25140520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4271378A Pending JPS53128271A (en) | 1977-04-13 | 1978-04-13 | Method of controlling intrinsic resistivity of crystal ingot |
Country Status (6)
Country | Link |
---|---|
US (1) | US4134785A (ja) |
JP (1) | JPS53128271A (ja) |
BE (1) | BE865913A (ja) |
DE (1) | DE2815612A1 (ja) |
FR (1) | FR2387079A1 (ja) |
IT (1) | IT7867817A0 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226890A (ja) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | 単結晶及びその製造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3743951A1 (de) * | 1986-12-26 | 1988-07-07 | Toshiba Ceramics Co | Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben |
EP0388503B1 (en) * | 1989-02-03 | 1993-09-01 | Mitsubishi Materials Corporation | Method for pulling single crystals |
US5288366A (en) * | 1992-04-24 | 1994-02-22 | Memc Electronic Materials, Inc. | Method for growing multiple single crystals and apparatus for use therein |
SG49058A1 (en) * | 1993-07-21 | 1998-05-18 | Memc Electronic Materials | Improved method for growing silicon crystal |
US5488924A (en) * | 1993-12-06 | 1996-02-06 | Memc Electronic Materials | Hopper for use in charging semiconductor source material |
US6019838A (en) * | 1998-01-05 | 2000-02-01 | Memc Electronic Materials, Inc. | Crystal growing apparatus with melt-doping facility |
AU779183B2 (en) * | 1999-05-28 | 2005-01-13 | Shin-Etsu Chemical Co. Ltd. | CZ single crystal doped with Ga and wafer and method for production thereof |
US6491752B1 (en) * | 1999-07-16 | 2002-12-10 | Sumco Oregon Corporation | Enhanced n-type silicon material for epitaxial wafer substrate and method of making same |
FR2808809B1 (fr) * | 2000-05-11 | 2003-06-27 | Emix | Installation de fabrication en continu de barreau de silicium multicristallin |
DE10202357C2 (de) * | 2001-06-21 | 2003-04-24 | Schott Glas | Verfahren und Vorrichtung zum Entnehmen einer Glasprobe aus einer Glassschmelze, insbesondere aus Bereichen unterhalb der Oberfläche der Glasschmelze |
JP4154388B2 (ja) * | 2004-12-27 | 2008-09-24 | キヤノン株式会社 | 被対象物を透過した電磁波の状態を検出するための検出装置 |
NO322246B1 (no) * | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
JP4961753B2 (ja) * | 2006-01-20 | 2012-06-27 | 株式会社Sumco | 単結晶製造管理システム及び方法 |
KR101841032B1 (ko) | 2010-09-03 | 2018-03-22 | 지티에이티 아이피 홀딩 엘엘씨 | 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정 |
CN102175490A (zh) * | 2011-01-27 | 2011-09-07 | 北京科技大学 | 一种连铸结晶器钢水快速汲取器 |
US9809900B2 (en) * | 2013-10-30 | 2017-11-07 | Siemens Medical Solutions Usa, Inc. | Crystal growth chamber with O-ring seal for Czochralski growth station |
CN104695009B (zh) * | 2015-03-30 | 2017-04-19 | 江苏盎华光伏工程技术研究中心有限公司 | 一种实现在线电阻率调试的单晶炉及其控制方法 |
JP6694652B2 (ja) * | 2016-09-02 | 2020-05-20 | 信越化学工業株式会社 | 光モジュール、及び、光路光軸調整方法 |
US11047066B2 (en) * | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3103627A (en) * | 1960-05-18 | 1963-09-10 | Polarad Electronics Corp | Microwave transmission molecular identification system employing wave propagation mode detectors |
US3354723A (en) * | 1965-04-09 | 1967-11-28 | Jones & Laughlin Steel Corp | Molten metal sampler |
FR1531730A (fr) * | 1966-06-13 | 1968-07-05 | Siemens Ag | Procédé pour préparer des tiges de silicium monocristallines |
US3582778A (en) * | 1968-03-20 | 1971-06-01 | Brookdeal Electronics Ltd | Microwave magnetic resonance spectrometers incorporating gunn-effect oscillators |
US3615261A (en) * | 1969-04-02 | 1971-10-26 | Motorola Inc | Method of producing single semiconductor crystals |
GB1352567A (en) * | 1971-04-28 | 1974-05-08 | Baeckerud S L | Method of checking adjusting the content of crystallization nuclei in a melt |
US3859857A (en) * | 1972-08-02 | 1975-01-14 | Richard A Falk | Molten metal stream sampler |
US3905238A (en) * | 1973-06-07 | 1975-09-16 | Richard A Falk | Pneumatic metal sampler |
-
1977
- 1977-04-13 US US05/787,135 patent/US4134785A/en not_active Expired - Lifetime
-
1978
- 1978-03-30 FR FR7809245A patent/FR2387079A1/fr not_active Withdrawn
- 1978-04-11 DE DE19782815612 patent/DE2815612A1/de active Pending
- 1978-04-12 IT IT7867817A patent/IT7867817A0/it unknown
- 1978-04-12 BE BE186737A patent/BE865913A/xx unknown
- 1978-04-13 JP JP4271378A patent/JPS53128271A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226890A (ja) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | 単結晶及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
BE865913A (fr) | 1978-07-31 |
US4134785A (en) | 1979-01-16 |
IT7867817A0 (it) | 1978-04-12 |
DE2815612A1 (de) | 1978-10-19 |
FR2387079A1 (fr) | 1978-11-10 |
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