BE865913A - Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux - Google Patents

Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux

Info

Publication number
BE865913A
BE865913A BE186737A BE186737A BE865913A BE 865913 A BE865913 A BE 865913A BE 186737 A BE186737 A BE 186737A BE 186737 A BE186737 A BE 186737A BE 865913 A BE865913 A BE 865913A
Authority
BE
Belgium
Prior art keywords
fusion
chemistry
real
control
crystal growth
Prior art date
Application number
BE186737A
Other languages
English (en)
French (fr)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE865913A publication Critical patent/BE865913A/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/916—Oxygen testing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
BE186737A 1977-04-13 1978-04-12 Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux BE865913A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/787,135 US4134785A (en) 1977-04-13 1977-04-13 Real-time analysis and control of melt-chemistry in crystal growing operations

Publications (1)

Publication Number Publication Date
BE865913A true BE865913A (fr) 1978-07-31

Family

ID=25140520

Family Applications (1)

Application Number Title Priority Date Filing Date
BE186737A BE865913A (fr) 1977-04-13 1978-04-12 Analyse en temps reel et controle de la chimie de fusion dans les operations de croissance des cristaux

Country Status (6)

Country Link
US (1) US4134785A (xx)
JP (1) JPS53128271A (xx)
BE (1) BE865913A (xx)
DE (1) DE2815612A1 (xx)
FR (1) FR2387079A1 (xx)
IT (1) IT7867817A0 (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226890A (ja) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk 単結晶及びその製造方法
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
EP0388503B1 (en) * 1989-02-03 1993-09-01 Mitsubishi Materials Corporation Method for pulling single crystals
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
SG49058A1 (en) * 1993-07-21 1998-05-18 Memc Electronic Materials Improved method for growing silicon crystal
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility
US6815605B1 (en) * 1999-05-28 2004-11-09 Shin-Etsu Handotai Co., Ltd. Silicon single crystal and wafer doped with gallium and method for producing them
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
FR2808809B1 (fr) * 2000-05-11 2003-06-27 Emix Installation de fabrication en continu de barreau de silicium multicristallin
DE10202357C2 (de) * 2001-06-21 2003-04-24 Schott Glas Verfahren und Vorrichtung zum Entnehmen einer Glasprobe aus einer Glassschmelze, insbesondere aus Bereichen unterhalb der Oberfläche der Glasschmelze
JP4154388B2 (ja) * 2004-12-27 2008-09-24 キヤノン株式会社 被対象物を透過した電磁波の状態を検出するための検出装置
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
JP4961753B2 (ja) * 2006-01-20 2012-06-27 株式会社Ｓｕｍｃｏ 単結晶製造管理システム及び方法
KR101841032B1 (ko) 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정
CN102175490A (zh) * 2011-01-27 2011-09-07 北京科技大学 一种连铸结晶器钢水快速汲取器
US9809900B2 (en) * 2013-10-30 2017-11-07 Siemens Medical Solutions Usa, Inc. Crystal growth chamber with O-ring seal for Czochralski growth station
CN104695009B (zh) * 2015-03-30 2017-04-19 江苏盎华光伏工程技术研究中心有限公司 一种实现在线电阻率调试的单晶炉及其控制方法
JP6694652B2 (ja) * 2016-09-02 2020-05-20 信越化学工業株式会社 光モジュール、及び、光路光軸調整方法
US10954606B2 (en) 2018-06-27 2021-03-23 Globalwafers Co., Ltd. Methods for modeling the impurity concentration of a single crystal silicon ingot
US11047066B2 (en) * 2018-06-27 2021-06-29 Globalwafers Co., Ltd. Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103627A (en) * 1960-05-18 1963-09-10 Polarad Electronics Corp Microwave transmission molecular identification system employing wave propagation mode detectors
US3354723A (en) * 1965-04-09 1967-11-28 Jones & Laughlin Steel Corp Molten metal sampler
FR1531730A (fr) * 1966-06-13 1968-07-05 Siemens Ag Procédé pour préparer des tiges de silicium monocristallines
US3582778A (en) * 1968-03-20 1971-06-01 Brookdeal Electronics Ltd Microwave magnetic resonance spectrometers incorporating gunn-effect oscillators
US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
GB1352567A (en) * 1971-04-28 1974-05-08 Baeckerud S L Method of checking adjusting the content of crystallization nuclei in a melt
US3859857A (en) * 1972-08-02 1975-01-14 Richard A Falk Molten metal stream sampler
US3905238A (en) * 1973-06-07 1975-09-16 Richard A Falk Pneumatic metal sampler

Also Published As

Publication number Publication date
US4134785A (en) 1979-01-16
IT7867817A0 (it) 1978-04-12
DE2815612A1 (de) 1978-10-19
FR2387079A1 (fr) 1978-11-10
JPS53128271A (en) 1978-11-09

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