FR2377095A1 - Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette - Google Patents

Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Info

Publication number
FR2377095A1
FR2377095A1 FR7700471A FR7700471A FR2377095A1 FR 2377095 A1 FR2377095 A1 FR 2377095A1 FR 7700471 A FR7700471 A FR 7700471A FR 7700471 A FR7700471 A FR 7700471A FR 2377095 A1 FR2377095 A1 FR 2377095A1
Authority
FR
France
Prior art keywords
trigger
thyristor
opening
amplifier controlled
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7700471A
Other languages
English (en)
French (fr)
Other versions
FR2377095B1 (US20100223739A1-20100909-C00005.png
Inventor
Albert Senes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alsthom Atlantique SA
Original Assignee
Alsthom Atlantique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique SA filed Critical Alsthom Atlantique SA
Priority to FR7700471A priority Critical patent/FR2377095A1/fr
Priority to BE1008621A priority patent/BE862498A/xx
Priority to DE2800172A priority patent/DE2800172C2/de
Priority to GB78153A priority patent/GB1542227A/en
Priority to US05/866,897 priority patent/US4177478A/en
Publication of FR2377095A1 publication Critical patent/FR2377095A1/fr
Application granted granted Critical
Publication of FR2377095B1 publication Critical patent/FR2377095B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR7700471A 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette Granted FR2377095A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7700471A FR2377095A1 (fr) 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette
BE1008621A BE862498A (fr) 1977-01-10 1977-12-30 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette
DE2800172A DE2800172C2 (de) 1977-01-10 1978-01-03 Thyristor mit Zündverstärkung und Löschsteuerung
GB78153A GB1542227A (en) 1977-01-10 1978-01-04 Amplifying gate thyristor with gate turnoff(gto)
US05/866,897 US4177478A (en) 1977-01-10 1978-01-04 Amplifying gate thyristor with gate turn-off (G.T.O.)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700471A FR2377095A1 (fr) 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Publications (2)

Publication Number Publication Date
FR2377095A1 true FR2377095A1 (fr) 1978-08-04
FR2377095B1 FR2377095B1 (US20100223739A1-20100909-C00005.png) 1980-02-29

Family

ID=9185269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7700471A Granted FR2377095A1 (fr) 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Country Status (5)

Country Link
US (1) US4177478A (US20100223739A1-20100909-C00005.png)
BE (1) BE862498A (US20100223739A1-20100909-C00005.png)
DE (1) DE2800172C2 (US20100223739A1-20100909-C00005.png)
FR (1) FR2377095A1 (US20100223739A1-20100909-C00005.png)
GB (1) GB1542227A (US20100223739A1-20100909-C00005.png)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066850A2 (en) * 1981-06-05 1982-12-15 Hitachi, Ltd. Semiconductor switching device
EP0077930A2 (en) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Gate turn-off thyristor
EP0108273A2 (en) * 1978-08-18 1984-05-16 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
EP0108874A1 (en) * 1982-11-15 1984-05-23 Kabushiki Kaisha Toshiba Radiation-controllable thyristor
EP0190585A1 (de) * 1985-02-01 1986-08-13 Siemens Aktiengesellschaft Abschaltbares Halbleiterbauelement
EP0231895A2 (en) * 1986-01-31 1987-08-12 Hitachi, Ltd. Gate turn-off thyristor
EP0637848A1 (fr) * 1993-08-06 1995-02-08 STMicroelectronics S.A. Thyristor à amplification de gâchette à courant de maintien accru
WO1997044827A1 (de) * 1996-05-20 1997-11-27 Siemens Aktiengesellschaft Thyristor mit integriertem du/dt-schutz

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
DE3435548A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher innerer zuendverstaerkung
JPH0691245B2 (ja) * 1985-06-26 1994-11-14 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0283788A1 (de) * 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement
CN1056248C (zh) * 1992-09-12 2000-09-06 朱文有 一种静电感应晶闸管的制造方法及其器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
GB1303337A (US20100223739A1-20100909-C00005.png) * 1970-10-06 1973-01-17
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
DE2241217C3 (de) * 1972-08-22 1978-07-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5718347B2 (US20100223739A1-20100909-C00005.png) * 1974-01-07 1982-04-16
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108273A3 (en) * 1978-08-18 1986-01-08 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
EP0108273A2 (en) * 1978-08-18 1984-05-16 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
EP0066850A2 (en) * 1981-06-05 1982-12-15 Hitachi, Ltd. Semiconductor switching device
EP0066850A3 (en) * 1981-06-05 1983-08-17 Hitachi, Ltd. Semiconductor switching device
EP0077930A3 (en) * 1981-10-23 1984-10-24 Kabushiki Kaisha Toshiba Gate turn-off thyristor
EP0077930A2 (en) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Gate turn-off thyristor
EP0108874A1 (en) * 1982-11-15 1984-05-23 Kabushiki Kaisha Toshiba Radiation-controllable thyristor
EP0190585A1 (de) * 1985-02-01 1986-08-13 Siemens Aktiengesellschaft Abschaltbares Halbleiterbauelement
EP0231895A2 (en) * 1986-01-31 1987-08-12 Hitachi, Ltd. Gate turn-off thyristor
EP0231895A3 (en) * 1986-01-31 1988-01-13 Hitachi, Ltd. Gate turn-off thyristor
US4825270A (en) * 1986-01-31 1989-04-25 Hitachi, Ltd. Gate turn-off thyristor
EP0637848A1 (fr) * 1993-08-06 1995-02-08 STMicroelectronics S.A. Thyristor à amplification de gâchette à courant de maintien accru
FR2708811A1 (fr) * 1993-08-06 1995-02-10 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
WO1997044827A1 (de) * 1996-05-20 1997-11-27 Siemens Aktiengesellschaft Thyristor mit integriertem du/dt-schutz
US6066864A (en) * 1996-05-20 2000-05-23 Siemens Aktiengesellschaft Thyristor with integrated dU/dt protection

Also Published As

Publication number Publication date
GB1542227A (en) 1979-03-14
US4177478A (en) 1979-12-04
DE2800172C2 (de) 1983-05-26
FR2377095B1 (US20100223739A1-20100909-C00005.png) 1980-02-29
BE862498A (fr) 1978-06-30
DE2800172A1 (de) 1978-07-13

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Legal Events

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TP Transmission of property