FR2372571A1 - Procede d'attaque plasmatique, notamment pour la fabrication de semiconducteurs - Google Patents

Procede d'attaque plasmatique, notamment pour la fabrication de semiconducteurs

Info

Publication number
FR2372571A1
FR2372571A1 FR7734884A FR7734884A FR2372571A1 FR 2372571 A1 FR2372571 A1 FR 2372571A1 FR 7734884 A FR7734884 A FR 7734884A FR 7734884 A FR7734884 A FR 7734884A FR 2372571 A1 FR2372571 A1 FR 2372571A1
Authority
FR
France
Prior art keywords
temp
esp
rest
semiconductor substrates
controlled plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7734884A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2372571A1 publication Critical patent/FR2372571A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne un procédé d'attaque plasmatique, notamment pour la fabrication de semiconducteurs. Des substrats 6, qui sont disposés à l'intérieur d'un tunnel d'attaque 3 dans une enceinte 1, subissent une attaque plasmatique et sont soumis à une régulation de température à l'aide d'une conduite tubulaire 7 permettant de refroidir ou de chauffer la plaque 5 avec laquelle les substrats 6 sont en contact thermique. Application notamment à la fabrication de circuits intégrés et de composants à semiconducteurs de la technique MOS.
FR7734884A 1976-11-29 1977-11-21 Procede d'attaque plasmatique, notamment pour la fabrication de semiconducteurs Withdrawn FR2372571A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762654083 DE2654083A1 (de) 1976-11-29 1976-11-29 Plasmaaetzverfahren

Publications (1)

Publication Number Publication Date
FR2372571A1 true FR2372571A1 (fr) 1978-06-23

Family

ID=5994209

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7734884A Withdrawn FR2372571A1 (fr) 1976-11-29 1977-11-21 Procede d'attaque plasmatique, notamment pour la fabrication de semiconducteurs

Country Status (5)

Country Link
JP (1) JPS5368642A (fr)
BE (1) BE861311A (fr)
DE (1) DE2654083A1 (fr)
FR (1) FR2372571A1 (fr)
IT (1) IT1089040B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264177A2 (fr) * 1986-10-16 1988-04-20 Silicon Valley Group, Inc. Dispositif d'évacuation de gaz

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025233A (ja) * 1983-07-22 1985-02-08 Fujitsu Ltd 真空処理方法
AT386316B (de) * 1985-11-11 1988-08-10 Voest Alpine Ag Plasmareaktor zum aetzen von leiterplatten

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264177A2 (fr) * 1986-10-16 1988-04-20 Silicon Valley Group, Inc. Dispositif d'évacuation de gaz
EP0264177A3 (en) * 1986-10-16 1990-05-23 Thermco Systems, Inc. Gas scavenger

Also Published As

Publication number Publication date
BE861311A (fr) 1978-03-16
DE2654083A1 (de) 1978-06-01
JPS5368642A (en) 1978-06-19
IT1089040B (it) 1985-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse