FR2363219A1 - Sysreme integre d'alimentation en courant - Google Patents

Sysreme integre d'alimentation en courant

Info

Publication number
FR2363219A1
FR2363219A1 FR7724033A FR7724033A FR2363219A1 FR 2363219 A1 FR2363219 A1 FR 2363219A1 FR 7724033 A FR7724033 A FR 7724033A FR 7724033 A FR7724033 A FR 7724033A FR 2363219 A1 FR2363219 A1 FR 2363219A1
Authority
FR
France
Prior art keywords
sysreme
power supply
rectifier
integrated power
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724033A
Other languages
English (en)
Other versions
FR2363219B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2363219A1 publication Critical patent/FR2363219A1/fr
Application granted granted Critical
Publication of FR2363219B1 publication Critical patent/FR2363219B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

L'invention concerne un système intégré d'alimentation en courant Dans ce circuit d'alimentation en courant, comportant au moins un redresseur 6 et un condensateur 7, le circuit redresseur 6 et le circuit 8 devant être alimentés en courant sont intégrés sur une microplaquette commune 9, tandis que le condensateur 7 est disposé en dehors de cette microplaquette et que le redresseur 6 est constitué par un élément bloquant pour des tensions négatives, passant pour des tensions positives et bloquant à nouveau pour des tensions positives supérieures. Application notamment aux dispositifs réalisés suivant la technologie SOS-ESFI.
FR7724033A 1976-08-24 1977-08-04 Sysreme integre d'alimentation en courant Granted FR2363219A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762638086 DE2638086A1 (de) 1976-08-24 1976-08-24 Integrierte stromversorgung

Publications (2)

Publication Number Publication Date
FR2363219A1 true FR2363219A1 (fr) 1978-03-24
FR2363219B1 FR2363219B1 (fr) 1981-11-27

Family

ID=5986229

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724033A Granted FR2363219A1 (fr) 1976-08-24 1977-08-04 Sysreme integre d'alimentation en courant

Country Status (8)

Country Link
US (1) US4166288A (fr)
JP (1) JPS5326952A (fr)
BE (1) BE858063A (fr)
DE (1) DE2638086A1 (fr)
FR (1) FR2363219A1 (fr)
GB (1) GB1589599A (fr)
IT (1) IT1084184B (fr)
NL (1) NL7709032A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740763A1 (de) * 1977-09-09 1979-03-29 Siemens Ag Integrierte stromversorgungsschaltung
JPS562017A (en) * 1979-06-19 1981-01-10 Toshiba Corp Constant electric current circuit
CH631048B (fr) * 1979-07-13 Ebauches Electroniques Sa Convertisseur de tension alternative en tension continue.
JPS5759475A (en) * 1980-09-26 1982-04-09 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor rectifying circuit with 2-terminal
JPS5866988A (ja) * 1981-10-16 1983-04-21 株式会社日立製作所 Ｃｒｔデイスプレイの画面合成方法
JPS6036696U (ja) * 1983-08-19 1985-03-13 株式会社リコー デイスプレイ装置
JPH0693180B2 (ja) * 1985-04-20 1994-11-16 株式会社リコー ビツトマツプ・デイスプレイ装置
DE4230350C2 (de) * 1992-09-10 1996-01-18 Fraunhofer Ges Forschung Integrierte Gleichrichterschaltung
JP3215862B2 (ja) * 1995-03-02 2001-10-09 農林水産省農業研究センター所長 バイオリアクターおよびその使用方法
DE10147311C2 (de) * 2001-09-26 2003-07-31 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung einer Last
GB2590057B (en) 2019-10-10 2022-11-16 Steifpower Tech Company Limited A Field-Effect Transistor (FET) based synchronous rectifier for emulating a diode
EP3912709B1 (fr) 2020-05-19 2024-02-14 Heraeus Medical GmbH Dispositif et procédé de mélange des liquides

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2007236A1 (fr) * 1968-04-29 1970-01-02 Gen Electric
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639177C3 (de) * 1968-02-23 1978-03-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte Gleichrichterschaltung
US3509446A (en) * 1968-05-31 1970-04-28 Gen Electric Full-wave rectifying monolithic integrated circuit
US3931634A (en) * 1973-06-14 1976-01-06 Rca Corporation Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
US3909700A (en) * 1974-01-18 1975-09-30 Gen Electric Monolithic semiconductor rectifier circuit structure
IT1044690B (it) * 1974-11-11 1980-04-21 Siemens Ag Dispositivo con due transistori a effetto di campo complementari
US4053798A (en) * 1975-02-20 1977-10-11 Matsushita Electronics Corporation Negative resistance device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
FR2007236A1 (fr) * 1968-04-29 1970-01-02 Gen Electric

Also Published As

Publication number Publication date
IT1084184B (it) 1985-05-25
FR2363219B1 (fr) 1981-11-27
NL7709032A (nl) 1978-02-28
BE858063A (fr) 1977-12-16
GB1589599A (en) 1981-05-13
DE2638086A1 (de) 1978-03-02
US4166288A (en) 1979-08-28
JPS5326952A (en) 1978-03-13

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Legal Events

Date Code Title Description
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