FR2354638A1 - Diodes photoemettrices a haut rendement - Google Patents

Diodes photoemettrices a haut rendement

Info

Publication number
FR2354638A1
FR2354638A1 FR7717579A FR7717579A FR2354638A1 FR 2354638 A1 FR2354638 A1 FR 2354638A1 FR 7717579 A FR7717579 A FR 7717579A FR 7717579 A FR7717579 A FR 7717579A FR 2354638 A1 FR2354638 A1 FR 2354638A1
Authority
FR
France
Prior art keywords
layer
light emitting
optical
contg
metal contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7717579A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of FR2354638A1 publication Critical patent/FR2354638A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
FR7717579A 1976-06-11 1977-06-08 Diodes photoemettrices a haut rendement Withdrawn FR2354638A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,639A CA1058732A (en) 1976-06-11 1976-06-11 Light emitting diodes with increased light emission efficiency

Publications (1)

Publication Number Publication Date
FR2354638A1 true FR2354638A1 (fr) 1978-01-06

Family

ID=4106191

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717579A Withdrawn FR2354638A1 (fr) 1976-06-11 1977-06-08 Diodes photoemettrices a haut rendement

Country Status (7)

Country Link
JP (1) JPS52152187A (nl)
CA (1) CA1058732A (nl)
DE (1) DE2719567A1 (nl)
ES (1) ES459664A1 (nl)
FR (1) FR2354638A1 (nl)
NL (1) NL7705246A (nl)
SE (1) SE7706625L (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142988A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Photo semiconductor device
CA1139412A (en) * 1980-09-10 1983-01-11 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
JPS5825053U (ja) * 1981-08-11 1983-02-17 住友電気工業株式会社 ハイブリツドｉｃ
DE3605019A1 (de) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Integrierte lumineszenzdiode fuer glasfaseruebertragungsleitungen und verfahren zu ihrer herstellung
DE4218806A1 (de) * 1992-06-06 1993-12-09 Telefunken Microelectron Mesa-Lumineszenz-Halbleiterelement
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
DE19506323A1 (de) * 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
DE19537545A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede
EP0027072A1 (fr) * 1979-10-05 1981-04-15 Thomson-Csf Procédé de couplage entre une fibre optique et une diode opto-électronique, et tête d'émission ou de réception réalisée par ce procédé

Also Published As

Publication number Publication date
ES459664A1 (es) 1978-04-16
NL7705246A (nl) 1977-12-13
CA1058732A (en) 1979-07-17
DE2719567A1 (de) 1977-12-22
JPS52152187A (en) 1977-12-17
SE7706625L (sv) 1977-12-12

Similar Documents

Publication Publication Date Title
US3981023A (en) Integral lens light emitting diode
GB1478152A (en) Light emissive diode
ATE92671T1 (de) Lumineszenzdiode mit kantenemission.
FR2354638A1 (fr) Diodes photoemettrices a haut rendement
CA1271550C (en) SEMICONDUCTOR LUMINESCENT DEVICE, ILLUMINATING VERTICALLY
MY132539A (en) Semiconductor device with cleaved surface
EP0808003A3 (en) Stepped substrate semiconductor laser for emitting light at slant portion
CA1265863C (en) DISTRIBUTED REACTION SEMICONDUCTOR LASER WITH MONITOR
US4912533A (en) End face light emitting element
GB1425634A (en) Optical component
KR930003448A (ko) 화합물 반도체 장치 및 그 제조방법
TW361004B (en) Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication
CA2112319A1 (en) Semiconductor Laser Having an AlGaInP Cladding Layer
JPS6449285A (en) Light-emitting and photodetecting device
JPS647667A (en) Light-emitting diode of edge emission type
EP0185854A3 (de) Halbleiter-Laserdiode mit vergrabener Heterostruktur
JPS55110082A (en) Semiconductor light emitting device
JPS5698888A (en) Light emitting semiconductor laser
MY111898A (en) Semiconductor laser
EP0207699A3 (en) Light-emitting element having multiquantum-well structure
JPS6476784A (en) Edge light-emitting diode
JPS56142691A (en) Semiconductor light emitting device
JPH01128479A (ja) 半導体発光素子
US3300671A (en) Surface-adjacent junction electroluminescent device
KR920011003A (ko) 화합물 반도체 레이저

Legal Events

Date Code Title Description
ST Notification of lapse