CA1058732A - Light emitting diodes with increased light emission efficiency - Google Patents
Light emitting diodes with increased light emission efficiencyInfo
- Publication number
- CA1058732A CA1058732A CA254,639A CA254639A CA1058732A CA 1058732 A CA1058732 A CA 1058732A CA 254639 A CA254639 A CA 254639A CA 1058732 A CA1058732 A CA 1058732A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- aperture
- confining
- light emitting
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000007788 roughening Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA254,639A CA1058732A (en) | 1976-06-11 | 1976-06-11 | Light emitting diodes with increased light emission efficiency |
| DE19772719567 DE2719567A1 (de) | 1976-06-11 | 1977-05-02 | Lichtemittierende diode mit vergroesserter lichtemissions-effektivitaet |
| NL7705246A NL7705246A (nl) | 1976-06-11 | 1977-05-12 | Licht emitterende diode en werkwijze voor het vervaardigen daarvan. |
| JP6054177A JPS52152187A (en) | 1976-06-11 | 1977-05-26 | Light emitting diode having increased light emitting efficiency and method of producing same |
| SE7706625A SE7706625L (sv) | 1976-06-11 | 1977-06-07 | Ljusemitterande diod |
| FR7717579A FR2354638A1 (fr) | 1976-06-11 | 1977-06-08 | Diodes photoemettrices a haut rendement |
| ES459664A ES459664A1 (es) | 1976-06-11 | 1977-06-10 | Perfeccionamientos en diodos luminiscentes. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA254,639A CA1058732A (en) | 1976-06-11 | 1976-06-11 | Light emitting diodes with increased light emission efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1058732A true CA1058732A (en) | 1979-07-17 |
Family
ID=4106191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA254,639A Expired CA1058732A (en) | 1976-06-11 | 1976-06-11 | Light emitting diodes with increased light emission efficiency |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS52152187A (nl) |
| CA (1) | CA1058732A (nl) |
| DE (1) | DE2719567A1 (nl) |
| ES (1) | ES459664A1 (nl) |
| FR (1) | FR2354638A1 (nl) |
| NL (1) | NL7705246A (nl) |
| SE (1) | SE7706625L (nl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140248A (en) * | 1995-02-23 | 2000-10-31 | Siemens Aktiengesellschaft | Process for producing a semiconductor device with a roughened semiconductor surface |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142988A (en) * | 1978-04-28 | 1979-11-07 | Hitachi Ltd | Photo semiconductor device |
| FR2466866A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede |
| CA1139412A (en) * | 1980-09-10 | 1983-01-11 | Northern Telecom Limited | Light emitting diodes with high external quantum efficiency |
| JPS5825053U (ja) * | 1981-08-11 | 1983-02-17 | 住友電気工業株式会社 | ハイブリツドｉｃ |
| DE3605019A1 (de) * | 1986-02-18 | 1987-08-20 | Messerschmitt Boelkow Blohm | Integrierte lumineszenzdiode fuer glasfaseruebertragungsleitungen und verfahren zu ihrer herstellung |
| DE4218806A1 (de) * | 1992-06-06 | 1993-12-09 | Telefunken Microelectron | Mesa-Lumineszenz-Halbleiterelement |
| DE4305296C3 (de) * | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
| DE19537545A1 (de) | 1995-10-09 | 1997-04-10 | Telefunken Microelectron | Verfahren zur Herstellung einer Lumineszenzdiode |
| DE19537544A1 (de) * | 1995-10-09 | 1997-04-10 | Telefunken Microelectron | Lumineszenzdiode mit verbesserter Lichtausbeute |
-
1976
- 1976-06-11 CA CA254,639A patent/CA1058732A/en not_active Expired
-
1977
- 1977-05-02 DE DE19772719567 patent/DE2719567A1/de active Pending
- 1977-05-12 NL NL7705246A patent/NL7705246A/nl not_active Application Discontinuation
- 1977-05-26 JP JP6054177A patent/JPS52152187A/ja active Pending
- 1977-06-07 SE SE7706625A patent/SE7706625L/xx unknown
- 1977-06-08 FR FR7717579A patent/FR2354638A1/fr not_active Withdrawn
- 1977-06-10 ES ES459664A patent/ES459664A1/es not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140248A (en) * | 1995-02-23 | 2000-10-31 | Siemens Aktiengesellschaft | Process for producing a semiconductor device with a roughened semiconductor surface |
| US6309953B1 (en) | 1995-02-23 | 2001-10-30 | Siemens Aktiengesellschaft | Process for producing a semiconductor device with a roughened semiconductor surface |
Also Published As
| Publication number | Publication date |
|---|---|
| ES459664A1 (es) | 1978-04-16 |
| JPS52152187A (en) | 1977-12-17 |
| NL7705246A (nl) | 1977-12-13 |
| DE2719567A1 (de) | 1977-12-22 |
| SE7706625L (sv) | 1977-12-12 |
| FR2354638A1 (fr) | 1978-01-06 |
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