SE7706625L - Ljusemitterande diod - Google Patents

Ljusemitterande diod

Info

Publication number
SE7706625L
SE7706625L SE7706625A SE7706625A SE7706625L SE 7706625 L SE7706625 L SE 7706625L SE 7706625 A SE7706625 A SE 7706625A SE 7706625 A SE7706625 A SE 7706625A SE 7706625 L SE7706625 L SE 7706625L
Authority
SE
Sweden
Prior art keywords
light emitting
emitting diod
diod
light
emitting
Prior art date
Application number
SE7706625A
Other languages
English (en)
Swedish (sv)
Inventor
F D King
A J Springthorpe
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of SE7706625L publication Critical patent/SE7706625L/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
SE7706625A 1976-06-11 1977-06-07 Ljusemitterande diod SE7706625L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,639A CA1058732A (en) 1976-06-11 1976-06-11 Light emitting diodes with increased light emission efficiency

Publications (1)

Publication Number Publication Date
SE7706625L true SE7706625L (sv) 1977-12-12

Family

ID=4106191

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7706625A SE7706625L (sv) 1976-06-11 1977-06-07 Ljusemitterande diod

Country Status (7)

Country Link
JP (1) JPS52152187A (xx)
CA (1) CA1058732A (xx)
DE (1) DE2719567A1 (xx)
ES (1) ES459664A1 (xx)
FR (1) FR2354638A1 (xx)
NL (1) NL7705246A (xx)
SE (1) SE7706625L (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142988A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Photo semiconductor device
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede
CA1139412A (en) * 1980-09-10 1983-01-11 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
JPS5825053U (ja) * 1981-08-11 1983-02-17 住友電気工業株式会社 ハイブリツドｉｃ
DE3605019A1 (de) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Integrierte lumineszenzdiode fuer glasfaseruebertragungsleitungen und verfahren zu ihrer herstellung
DE4218806A1 (de) * 1992-06-06 1993-12-09 Telefunken Microelectron Mesa-Lumineszenz-Halbleiterelement
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
DE19506323A1 (de) * 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
DE19537545A1 (de) 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute

Also Published As

Publication number Publication date
ES459664A1 (es) 1978-04-16
CA1058732A (en) 1979-07-17
JPS52152187A (en) 1977-12-17
NL7705246A (nl) 1977-12-13
DE2719567A1 (de) 1977-12-22
FR2354638A1 (fr) 1978-01-06

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