JPS52152187A - Light emitting diode having increased light emitting efficiency and method of producing same - Google Patents

Light emitting diode having increased light emitting efficiency and method of producing same

Info

Publication number
JPS52152187A
JPS52152187A JP6054177A JP6054177A JPS52152187A JP S52152187 A JPS52152187 A JP S52152187A JP 6054177 A JP6054177 A JP 6054177A JP 6054177 A JP6054177 A JP 6054177A JP S52152187 A JPS52152187 A JP S52152187A
Authority
JP
Japan
Prior art keywords
light emitting
producing same
emitting diode
increased
emitting efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6054177A
Other languages
English (en)
Japanese (ja)
Inventor
Debitsudo Kingu Furederitsuku
Jiyon Supuringusoopu Ansonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS52152187A publication Critical patent/JPS52152187A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
JP6054177A 1976-06-11 1977-05-26 Light emitting diode having increased light emitting efficiency and method of producing same Pending JPS52152187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,639A CA1058732A (en) 1976-06-11 1976-06-11 Light emitting diodes with increased light emission efficiency

Publications (1)

Publication Number Publication Date
JPS52152187A true JPS52152187A (en) 1977-12-17

Family

ID=4106191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6054177A Pending JPS52152187A (en) 1976-06-11 1977-05-26 Light emitting diode having increased light emitting efficiency and method of producing same

Country Status (7)

Country Link
JP (1) JPS52152187A (nl)
CA (1) CA1058732A (nl)
DE (1) DE2719567A1 (nl)
ES (1) ES459664A1 (nl)
FR (1) FR2354638A1 (nl)
NL (1) NL7705246A (nl)
SE (1) SE7706625L (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825053U (ja) * 1981-08-11 1983-02-17 住友電気工業株式会社 ハイブリツドｉｃ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142988A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Photo semiconductor device
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede
CA1139412A (en) * 1980-09-10 1983-01-11 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
DE3605019A1 (de) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Integrierte lumineszenzdiode fuer glasfaseruebertragungsleitungen und verfahren zu ihrer herstellung
DE4218806A1 (de) * 1992-06-06 1993-12-09 Telefunken Microelectron Mesa-Lumineszenz-Halbleiterelement
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
DE19506323A1 (de) * 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute
DE19537545A1 (de) 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825053U (ja) * 1981-08-11 1983-02-17 住友電気工業株式会社 ハイブリツドｉｃ

Also Published As

Publication number Publication date
ES459664A1 (es) 1978-04-16
SE7706625L (sv) 1977-12-12
FR2354638A1 (fr) 1978-01-06
NL7705246A (nl) 1977-12-13
CA1058732A (en) 1979-07-17
DE2719567A1 (de) 1977-12-22

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