FR2345810A1 - Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant - Google Patents

Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant

Info

Publication number
FR2345810A1
FR2345810A1 FR7708346A FR7708346A FR2345810A1 FR 2345810 A1 FR2345810 A1 FR 2345810A1 FR 7708346 A FR7708346 A FR 7708346A FR 7708346 A FR7708346 A FR 7708346A FR 2345810 A1 FR2345810 A1 FR 2345810A1
Authority
FR
France
Prior art keywords
devices
current rectifier
photovoltaic
photovoltaic devices
rectifier devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7708346A
Other languages
English (en)
French (fr)
Other versions
FR2345810B1 (ro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/710,186 external-priority patent/US4142195A/en
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2345810A1 publication Critical patent/FR2345810A1/fr
Application granted granted Critical
Publication of FR2345810B1 publication Critical patent/FR2345810B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7708346A 1976-03-22 1977-03-21 Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant Granted FR2345810A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66890876A 1976-03-22 1976-03-22
US05/710,186 US4142195A (en) 1976-03-22 1976-07-30 Schottky barrier semiconductor device and method of making same

Publications (2)

Publication Number Publication Date
FR2345810A1 true FR2345810A1 (fr) 1977-10-21
FR2345810B1 FR2345810B1 (ro) 1982-04-09

Family

ID=27100017

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7708346A Granted FR2345810A1 (fr) 1976-03-22 1977-03-21 Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant

Country Status (6)

Country Link
JP (1) JPS52122471A (ro)
CA (1) CA1078078A (ro)
DE (1) DE2711365A1 (ro)
FR (1) FR2345810A1 (ro)
GB (1) GB1572846A (ro)
HK (1) HK72084A (ro)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432765A1 (fr) * 1978-03-16 1980-02-29 Energy Conversion Devices Inc Procede de fabrication d'un film semi-conducteur et film semi-conducteur en faisant application
EP0008406A1 (de) * 1978-08-23 1980-03-05 Siemens Aktiengesellschaft Verfahren zum Herstellen einer Passivierungsschicht auf einem Silicium-Halbleiterkörper
FR2451637A1 (fr) * 1979-03-12 1980-10-10 Rca Corp Cellule solaire au silicium amorphe
FR2452072A1 (fr) * 1979-03-20 1980-10-17 Sanyo Electric Co Dispositif de transformation de l'energie solaire en une autre forme d'energie
FR2454186A1 (fr) * 1977-10-12 1980-11-07 Energy Conversion Devices Inc Semi-conducteurs amorphes et procede pour leur preparation
FR2454182A1 (fr) * 1979-02-05 1980-11-07 Siemens Ag Procede pour fabriquer des corps semi-conducteurs constitues par du silicium amorphe, au moyen d'une decharge par effluves
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
FR2463508A1 (fr) * 1979-08-16 1981-02-20 Anvar Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene
EP0029379A1 (fr) * 1979-11-15 1981-05-27 Thomson-Csf Détecteur de rayonnements X ou gamma notamment pour radiologie, appareil radiologique comportant un tel détecteur
FR2487535A1 (ro) * 1977-12-22 1982-01-29 Canon Kk
EP0060699A2 (en) * 1981-03-13 1982-09-22 Hitachi, Ltd. Method of manufacturing photosensors

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPS604273A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS604274A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS6088955A (ja) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd プラズマｃｖｄ装置
JPS62142374A (ja) * 1986-11-29 1987-06-25 Shunpei Yamazaki 光電変換半導体装置作製方法
JP2704569B2 (ja) * 1991-06-28 1998-01-26 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV320/76 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454186A1 (fr) * 1977-10-12 1980-11-07 Energy Conversion Devices Inc Semi-conducteurs amorphes et procede pour leur preparation
FR2487535A1 (ro) * 1977-12-22 1982-01-29 Canon Kk
FR2432765A1 (fr) * 1978-03-16 1980-02-29 Energy Conversion Devices Inc Procede de fabrication d'un film semi-conducteur et film semi-conducteur en faisant application
EP0008406A1 (de) * 1978-08-23 1980-03-05 Siemens Aktiengesellschaft Verfahren zum Herstellen einer Passivierungsschicht auf einem Silicium-Halbleiterkörper
FR2454182A1 (fr) * 1979-02-05 1980-11-07 Siemens Ag Procede pour fabriquer des corps semi-conducteurs constitues par du silicium amorphe, au moyen d'une decharge par effluves
FR2451637A1 (fr) * 1979-03-12 1980-10-10 Rca Corp Cellule solaire au silicium amorphe
FR2452072A1 (fr) * 1979-03-20 1980-10-17 Sanyo Electric Co Dispositif de transformation de l'energie solaire en une autre forme d'energie
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
EP0024378A1 (fr) * 1979-08-03 1981-03-04 Thomson-Csf Procédé de réalisation d'une couche contenant du silicium à structure hybride entre les formes amorphe et polycristalline, et pile solaire comprenant une telle couche
FR2463508A1 (fr) * 1979-08-16 1981-02-20 Anvar Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene
EP0029379A1 (fr) * 1979-11-15 1981-05-27 Thomson-Csf Détecteur de rayonnements X ou gamma notamment pour radiologie, appareil radiologique comportant un tel détecteur
EP0060699A2 (en) * 1981-03-13 1982-09-22 Hitachi, Ltd. Method of manufacturing photosensors
EP0060699A3 (en) * 1981-03-13 1983-10-19 Hitachi, Ltd. Method of manufacturing photosensors

Also Published As

Publication number Publication date
FR2345810B1 (ro) 1982-04-09
DE2711365A1 (de) 1977-09-29
GB1572846A (en) 1980-08-06
HK72084A (en) 1984-09-28
JPS616556B2 (ro) 1986-02-27
JPS52122471A (en) 1977-10-14
DE2711365C2 (ro) 1988-09-01
CA1078078A (en) 1980-05-20

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Legal Events

Date Code Title Description
ST Notification of lapse