FR2335952A1 - Procede de fabrication d'une couche de masquage et dispositifs obtenus - Google Patents

Procede de fabrication d'une couche de masquage et dispositifs obtenus

Info

Publication number
FR2335952A1
FR2335952A1 FR7632458A FR7632458A FR2335952A1 FR 2335952 A1 FR2335952 A1 FR 2335952A1 FR 7632458 A FR7632458 A FR 7632458A FR 7632458 A FR7632458 A FR 7632458A FR 2335952 A1 FR2335952 A1 FR 2335952A1
Authority
FR
France
Prior art keywords
manufacturing
masking layer
devices obtained
devices
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632458A
Other languages
English (en)
French (fr)
Other versions
FR2335952B1 (ref
Inventor
Armin Bogh
Erich Mirbach
Eckehard Ebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2335952A1 publication Critical patent/FR2335952A1/fr
Application granted granted Critical
Publication of FR2335952B1 publication Critical patent/FR2335952B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
FR7632458A 1975-12-18 1976-10-18 Procede de fabrication d'une couche de masquage et dispositifs obtenus Granted FR2335952A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2557079A DE2557079C2 (de) 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht

Publications (2)

Publication Number Publication Date
FR2335952A1 true FR2335952A1 (fr) 1977-07-15
FR2335952B1 FR2335952B1 (ref) 1979-09-21

Family

ID=5964757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632458A Granted FR2335952A1 (fr) 1975-12-18 1976-10-18 Procede de fabrication d'une couche de masquage et dispositifs obtenus

Country Status (7)

Country Link
US (1) US4091169A (ref)
JP (1) JPS5275986A (ref)
CA (1) CA1078972A (ref)
DE (1) DE2557079C2 (ref)
FR (1) FR2335952A1 (ref)
GB (1) GB1500238A (ref)
IT (1) IT1123672B (ref)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073713A3 (en) * 1981-08-24 1985-12-18 Fairchild Camera & Instrument Corporation Process for self-healing dielectrics

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
JPS5617988A (en) * 1979-07-24 1981-02-20 Toshio Hirai Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture
US4254161A (en) * 1979-08-16 1981-03-03 International Business Machines Corporation Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
US4289801A (en) * 1980-05-21 1981-09-15 United Technologies Corporation Method for producing fine grained pyrolytic silicon nitride
US4333964A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
EP0546670B2 (en) * 1991-12-13 2000-11-08 Ford Motor Company Limited Metal nitride films
FR2759362B1 (fr) 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
AU2001242510B2 (en) * 2000-04-28 2006-02-23 Merck Patent Gmbh Etching pastes for inorganic surfaces
DE10103524A1 (de) * 2001-01-26 2002-08-22 Infineon Technologies Ag Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
JP4403824B2 (ja) * 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
US20070048906A1 (en) * 2005-08-23 2007-03-01 Han Seung H Method for fabricating semiconductor device
US7501355B2 (en) * 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1492719A (fr) * 1965-10-11 1967-08-18 Ibm Procédé de dépôt de films de nitrure de silicium continus ne présentant pas de trous et produits obtenus par ce procédé
US3419761A (en) * 1965-10-11 1968-12-31 Ibm Method for depositing silicon nitride insulating films and electric devices incorporating such films
DE1544287B2 (de) * 1966-04-29 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Schutzschicht aus Siliciumnitrid
NL6703526A (ref) * 1966-05-02 1967-11-03
JPS5128983B1 (ref) * 1966-10-28 1976-08-23
US3520722A (en) * 1967-05-10 1970-07-14 Rca Corp Fabrication of semiconductive devices with silicon nitride coatings
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3652331A (en) * 1968-03-22 1972-03-28 Shumpei Yamazaki Process for forming a film on the surface of a substrate by a gas phase
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3637423A (en) * 1969-02-10 1972-01-25 Westinghouse Electric Corp Pyrolytic deposition of silicon nitride films
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
US3874919A (en) * 1974-03-13 1975-04-01 Ibm Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body
US4036653A (en) 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073713A3 (en) * 1981-08-24 1985-12-18 Fairchild Camera & Instrument Corporation Process for self-healing dielectrics

Also Published As

Publication number Publication date
GB1500238A (en) 1978-02-08
JPS5320390B2 (ref) 1978-06-26
DE2557079A1 (de) 1977-06-30
CA1078972A (en) 1980-06-03
JPS5275986A (en) 1977-06-25
FR2335952B1 (ref) 1979-09-21
IT1123672B (it) 1986-04-30
US4091169A (en) 1978-05-23
DE2557079C2 (de) 1984-05-24

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Legal Events

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ST Notification of lapse