FR2335919A1 - Methode pour faire varier le diametre d'un faisceau de particules chargees - Google Patents
Methode pour faire varier le diametre d'un faisceau de particules chargeesInfo
- Publication number
- FR2335919A1 FR2335919A1 FR7634519A FR7634519A FR2335919A1 FR 2335919 A1 FR2335919 A1 FR 2335919A1 FR 7634519 A FR7634519 A FR 7634519A FR 7634519 A FR7634519 A FR 7634519A FR 2335919 A1 FR2335919 A1 FR 2335919A1
- Authority
- FR
- France
- Prior art keywords
- vary
- diameter
- charged particle
- particle beam
- charged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/641,054 US4013891A (en) | 1975-12-15 | 1975-12-15 | Method for varying the diameter of a beam of charged particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2335919A1 true FR2335919A1 (fr) | 1977-07-15 |
| FR2335919B1 FR2335919B1 (cg-RX-API-DMAC7.html) | 1978-06-30 |
Family
ID=24570764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7634519A Granted FR2335919A1 (fr) | 1975-12-15 | 1976-11-08 | Methode pour faire varier le diametre d'un faisceau de particules chargees |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4013891A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS588548B2 (cg-RX-API-DMAC7.html) |
| CA (1) | CA1061416A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2647254C2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2335919A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1519726A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3430984A1 (de) * | 1984-08-23 | 1986-03-06 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zur registrierung von teilchen oder quanten mit hilfe eines detektors |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2383702A1 (fr) * | 1977-03-18 | 1978-10-13 | Anvar | Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs |
| FR2389998B1 (cg-RX-API-DMAC7.html) * | 1977-05-05 | 1981-11-20 | Ibm | |
| US4118630A (en) * | 1977-05-05 | 1978-10-03 | International Business Machines Corporation | Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface |
| US4199689A (en) * | 1977-12-21 | 1980-04-22 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam exposing method and electron beam apparatus |
| FR2412939A1 (fr) * | 1977-12-23 | 1979-07-20 | Anvar | Implanteur d'ions a fort courant |
| US4263514A (en) * | 1979-09-13 | 1981-04-21 | Hughes Aircraft Company | Electron beam system |
| JPS58164134A (ja) * | 1982-03-24 | 1983-09-29 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS60243960A (ja) * | 1984-05-18 | 1985-12-03 | Hitachi Ltd | イオンマイクロビ−ム装置 |
| US4717829A (en) * | 1985-03-14 | 1988-01-05 | Varian Associates, Inc. | Platen and beam setup flag assembly for ion implanter |
| JPS62115715A (ja) * | 1985-07-22 | 1987-05-27 | Toshiba Mach Co Ltd | 電子ビ−ム露光装置 |
| JPH0766775B2 (ja) * | 1985-12-04 | 1995-07-19 | 日新電機株式会社 | イオン注入装置 |
| US4757208A (en) * | 1986-03-07 | 1988-07-12 | Hughes Aircraft Company | Masked ion beam lithography system and method |
| JPH0744027B2 (ja) * | 1986-04-28 | 1995-05-15 | 日新電機株式会社 | イオン処理装置 |
| DE3734442A1 (de) * | 1987-10-12 | 1989-04-27 | Kernforschungsanlage Juelich | Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen |
| US7045799B1 (en) * | 2004-11-19 | 2006-05-16 | Varian Semiconductor Equipment Associates, Inc. | Weakening focusing effect of acceleration-deceleration column of ion implanter |
| JP6132907B2 (ja) * | 2013-05-14 | 2017-05-24 | 株式会社日立製作所 | 試料ホルダ及びそれを備えた集束イオンビーム加工装置 |
| CN104091746A (zh) * | 2014-06-30 | 2014-10-08 | 京东方科技集团股份有限公司 | 一种离子注入设备用电极和离子注入设备 |
| JP2022147563A (ja) * | 2021-03-23 | 2022-10-06 | 本田技研工業株式会社 | 塗装方法および塗膜硬化装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
| US3483427A (en) * | 1967-11-03 | 1969-12-09 | Minnesota Mining & Mfg | Lens for electron beam recorder |
| US3619608A (en) * | 1969-08-04 | 1971-11-09 | Stanford Research Inst | Multiple imaging charged particle beam exposure system |
| US3689782A (en) * | 1971-07-01 | 1972-09-05 | Thomson Csf | Electronic transducer for a piezoelectric line |
| US3756862A (en) * | 1971-12-21 | 1973-09-04 | Ibm | Proton enhanced diffusion methods |
-
1975
- 1975-12-15 US US05/641,054 patent/US4013891A/en not_active Expired - Lifetime
-
1976
- 1976-10-20 DE DE2647254A patent/DE2647254C2/de not_active Expired
- 1976-10-26 GB GB44526/76A patent/GB1519726A/en not_active Expired
- 1976-11-08 FR FR7634519A patent/FR2335919A1/fr active Granted
- 1976-11-15 JP JP51136450A patent/JPS588548B2/ja not_active Expired
- 1976-12-10 CA CA267,642A patent/CA1061416A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3430984A1 (de) * | 1984-08-23 | 1986-03-06 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zur registrierung von teilchen oder quanten mit hilfe eines detektors |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2647254C2 (de) | 1984-05-10 |
| GB1519726A (en) | 1978-08-02 |
| JPS5274198A (en) | 1977-06-21 |
| JPS588548B2 (ja) | 1983-02-16 |
| CA1061416A (en) | 1979-08-28 |
| DE2647254A1 (de) | 1977-06-16 |
| US4013891A (en) | 1977-03-22 |
| FR2335919B1 (cg-RX-API-DMAC7.html) | 1978-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |